Payal Priya
Birsa Institute of Technology (BIT), Sindri
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Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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11 Other formulas that you can solve using the same Inputs

Current entering drain terminal of MOSFET when Vgs is given
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2))) GO
Current entering drain terminal of MOSFET
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source GO
Current flowing through the induced channel in the transistor
output current =(Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Effective voltage or overdrive voltage)*Voltage between drain and source GO
Conductance of channel of MOSFET when Vgs is given
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage) GO
MOSFET as linear resistance when aspect ratio is given
MOSFET as linear resistance=Length of the Channel/(Mobility of electrons at the surface of channel*Oxide Capacitance*Width of the Channel*Effective voltage or overdrive voltage) GO
Current entering drain terminal of MOSFET at saturation
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2 GO
Drain saturation current of MOSFET
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2 GO
Magnitude of the electron charge in the channel of MOSFET
Electron Charge in channel=Oxide Capacitance*Width of the Channel*Length of the Channel*Effective voltage or overdrive voltage GO
MOSFET transconductance parameter
MOSFET transconductance parameter=Mobility of electrons at the surface of channel*Oxide Capacitance*Aspect Ratio GO
Electric field across the length of the channel of NMOS transistor
Electric field across the length of the channel=Voltage between drain and source/Length of the Channel GO
MOSFET transconductance parameter in terms of process transconductance
MOSFET transconductance parameter=Process transconductance parameter*Aspect Ratio GO

11 Other formulas that calculate the same Output

Current entering drain terminal of MOSFET when Vgs is given
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2))) GO
Current entering drain terminal of MOSFET
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source GO
Drain current
Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source GO
Current entering drain-source in triode region of NMOS
Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-Threshold voltage)*Voltage between drain and source-1/2*(Voltage between drain and source)^2) GO
Drain current when device parameter is given
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-Threshold voltage)^2*(1+Device parameter*Voltage between drain and source) GO
Current entering drain-source in triode region of NMOS when effective voltage is given
Drain current=Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source GO
Drain current when MOSFET operates as a voltage-controlled current source
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 GO
Current entering drain-source at saturation region of NMOS
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 GO
Drain current without channel-length modulation of MOSFET
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 GO
Drain current when MOSFET operates as a voltage-controlled current source in terms of Vov
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2 GO
Current entering drain-source at boundary of the saturation and triode region of NMOS
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage between drain and source)^2 GO

Drain current in triode region of PMOS transistor when V<sub>SD</sub> is given Formula

Drain current=Process transconductance parameter*Aspect Ratio*(modulus(Effective voltage or overdrive voltage)-1/2*Voltage between drain and source)*Voltage between drain and source
I<sub>d</sub>=k'<sub>n</sub>*AV*(modulus(V<sub>ov</sub>)-1/2*V<sub>DS</sub>)*V<sub>DS</sub>
More formulas
Transistor transconductance parameter of PMOS GO
Drain current in triode region of PMOS transistor GO
Drain current in the saturation region of PMOS transistor GO
Drain current in the saturation region of PMOS transistor when V<sub>ov</sub> is given GO
Overall drain current of PMOS transistor GO
Overdrive voltage of PMOS GO

What is drain current in MOSFET?

The drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Vgs characteristic is defined as the subthreshold slope, S, and is one of the most critical performance metrics for MOSFETs in logic applications.

Which way does current flow in a PMOS?

In an NMOS electrons are the charge carriers. So electrons travel from Source to Drain (meaning the current goes from Drain > Source.) In a PMOS holes are the charge carries. So holes travel from Source to Drain.

How to Calculate Drain current in triode region of PMOS transistor when VSD is given?

Drain current in triode region of PMOS transistor when VSD is given calculator uses Drain current=Process transconductance parameter*Aspect Ratio*(modulus(Effective voltage or overdrive voltage)-1/2*Voltage between drain and source)*Voltage between drain and source to calculate the Drain current, The Drain current in triode region of PMOS transistor when VSD is given where the source is the small voltage and the drain is the biggest voltage(they are interchangeable). In PMOS transistor holes are the charge carriers and current flows because of the holes. Drain current and is denoted by Id symbol.

How to calculate Drain current in triode region of PMOS transistor when VSD is given using this online calculator? To use this online calculator for Drain current in triode region of PMOS transistor when VSD is given, enter Process transconductance parameter (k'n), Aspect Ratio (AV), Effective voltage or overdrive voltage (Vov) and Voltage between drain and source (VDS) and hit the calculate button. Here is how the Drain current in triode region of PMOS transistor when VSD is given calculation can be explained with given input values -> 0.00015 = 2*5*(modulus(5)-1/2*3E-06)*3E-06.

FAQ

What is Drain current in triode region of PMOS transistor when VSD is given?
The Drain current in triode region of PMOS transistor when VSD is given where the source is the small voltage and the drain is the biggest voltage(they are interchangeable). In PMOS transistor holes are the charge carriers and current flows because of the holes and is represented as Id=k'n*AV*(modulus(Vov)-1/2*VDS)*VDS or Drain current=Process transconductance parameter*Aspect Ratio*(modulus(Effective voltage or overdrive voltage)-1/2*Voltage between drain and source)*Voltage between drain and source. Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance, Aspect Ratio is the ratio of the .width of the channel to the length of the channel, Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed and The voltage between drain and source is applied positive voltage between drain and source, having induced a channel.
How to calculate Drain current in triode region of PMOS transistor when VSD is given?
The Drain current in triode region of PMOS transistor when VSD is given where the source is the small voltage and the drain is the biggest voltage(they are interchangeable). In PMOS transistor holes are the charge carriers and current flows because of the holes is calculated using Drain current=Process transconductance parameter*Aspect Ratio*(modulus(Effective voltage or overdrive voltage)-1/2*Voltage between drain and source)*Voltage between drain and source. To calculate Drain current in triode region of PMOS transistor when VSD is given, you need Process transconductance parameter (k'n), Aspect Ratio (AV), Effective voltage or overdrive voltage (Vov) and Voltage between drain and source (VDS). With our tool, you need to enter the respective value for Process transconductance parameter, Aspect Ratio, Effective voltage or overdrive voltage and Voltage between drain and source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Drain current?
In this formula, Drain current uses Process transconductance parameter, Aspect Ratio, Effective voltage or overdrive voltage and Voltage between drain and source. We can use 11 other way(s) to calculate the same, which is/are as follows -
  • Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source
  • Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source
  • Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2)))
  • Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-Threshold voltage)*Voltage between drain and source-1/2*(Voltage between drain and source)^2)
  • Drain current=Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage between drain and source)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-Threshold voltage)^2*(1+Device parameter*Voltage between drain and source)
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2
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