Net Rate of Change in Conduction Band Calculator

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✖Thermal Generation recombination rates that are balanced so that the net charge carrier density remains constant.ⓘ Thermal Generation [TG]			+10% -10%
✖Intrinsic Carrier Concentration is used to describe the concentration of charge carriers (electrons and holes) in an intrinsic or undoped semiconductor material at thermal equilibrium.ⓘ Intrinsic Carrier Concentration [n_i]			+10% -10%

✖Proportionality for recombination is denoted by the symbol αr.ⓘ Net Rate of Change in Conduction Band [α_r]

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Net Rate of Change in Conduction Band

Formula

`"α"_{"r"} = "TG"/("n"_{"i"}^2)`

Example

`"1.2E^-6m³/s"="8.7e10"/(("2.7e8/m³")^2)`

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Download Energy Band & Charge Carrier Formulas PDF

Net Rate of Change in Conduction Band Solution

STEP 0: Pre-Calculation Summary

Formula Used

Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)
α_r = TG/(n_i^2)
This formula uses 3 Variables

Variables Used

Proportionality for Recombination - (Measured in Cubic Meter per Second) - Proportionality for recombination is denoted by the symbol αr.
Thermal Generation - Thermal Generation recombination rates that are balanced so that the net charge carrier density remains constant.
Intrinsic Carrier Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Carrier Concentration is used to describe the concentration of charge carriers (electrons and holes) in an intrinsic or undoped semiconductor material at thermal equilibrium.

STEP 1: Convert Input(s) to Base Unit

Thermal Generation: 87000000000 --> No Conversion Required
Intrinsic Carrier Concentration: 270000000 1 per Cubic Meter --> 270000000 1 per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

α_r = TG/(n_i^2) --> 87000000000/(270000000^2)

Evaluating ... ...

α_r = 1.19341563786008E-06

STEP 3: Convert Result to Output's Unit

1.19341563786008E-06 Cubic Meter per Second --> No Conversion Required

FINAL ANSWER

1.19341563786008E-06 ≈ 1.2E-6 Cubic Meter per Second <-- Proportionality for Recombination

(Calculation completed in 00.020 seconds)

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< 20 Energy Band & Charge Carrier Calculators

Intrinsic Carrier Concentration

Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band)*exp(-Energy Gap/(2*[BoltZ]*Temperature))

Carrier Lifetime

Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))

Energy of Electron given Coulomb's Constant

Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)

Steady State Electron Concentration

Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration

Concentration in Conduction Band

Go Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function

Effective Density of State

Go Effective Density of State in Conduction Band = Electron Concentration in Conduction Band/Fermi Function

Fermi Function

Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band

Effective Density State in Valence Band

Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)

Concentration of Holes in Valence Band

Go Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)

Recombination Lifetime

Go Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1

Distribution Coefficient

Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid

Liquid Concentration

Go Impurity Concentration in Liquid = Impurity Concentration in Solid/Distribution Coefficient

Net Rate of Change in Conduction Band

Go Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)

Thermal Generation Rate

Go Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration^2)

Excess Carrier Concentration

Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime

Optical Generation Rate

Go Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime

Photoelectron Energy

Go Photoelectron Energy = [hP]*Frequency of Incident Light

Conduction Band Energy

Go Conduction Band Energy = Energy Gap+Valence Band Energy

Valence Band Energy

Go Valence Band Energy = Conduction Band Energy-Energy Gap

Energy Gap

Go Energy Gap = Conduction Band Energy-Valence Band Energy

Net Rate of Change in Conduction Band Formula

Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)
α_r = TG/(n_i^2)

How do you find the concentration of a hole?

Calculate Electron and Hole Concentration in Intrinsic Si at Room Temperature If Its Electrical Conductivity is 4x10-4 Mho/M. Given that Mobility of Electron= 0.14m2/V-sec and Mobility of Holes=0.04m2/ - Applied Physics 1. 0.14m2/V-sec and mobility of holes=0.04m2/V-sec.

How to Calculate Net Rate of Change in Conduction Band?

Net Rate of Change in Conduction Band calculator uses Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2) to calculate the Proportionality for Recombination, Net Rate of Change in Conduction Band refers to the rate at which electrons move through the material under the influence of an electric field. This rate of change is typically expressed in units of current density, which is the amount of charge per unit area per unit time. Proportionality for Recombination is denoted by α_r symbol.

How to calculate Net Rate of Change in Conduction Band using this online calculator? To use this online calculator for Net Rate of Change in Conduction Band, enter Thermal Generation (TG) & Intrinsic Carrier Concentration (n_i) and hit the calculate button. Here is how the Net Rate of Change in Conduction Band calculation can be explained with given input values -> 1.2E-6 = 87000000000/(270000000^2).

FAQ

What is Net Rate of Change in Conduction Band?

Net Rate of Change in Conduction Band refers to the rate at which electrons move through the material under the influence of an electric field. This rate of change is typically expressed in units of current density, which is the amount of charge per unit area per unit time and is represented as α_r = TG/(n_i^2) or Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2). Thermal Generation recombination rates that are balanced so that the net charge carrier density remains constant & Intrinsic Carrier Concentration is used to describe the concentration of charge carriers (electrons and holes) in an intrinsic or undoped semiconductor material at thermal equilibrium.

How to calculate Net Rate of Change in Conduction Band?

Net Rate of Change in Conduction Band refers to the rate at which electrons move through the material under the influence of an electric field. This rate of change is typically expressed in units of current density, which is the amount of charge per unit area per unit time is calculated using Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2). To calculate Net Rate of Change in Conduction Band, you need Thermal Generation (TG) & Intrinsic Carrier Concentration (n_i). With our tool, you need to enter the respective value for Thermal Generation & Intrinsic Carrier Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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