Optical Gain of Phototransistors Solution

STEP 0: Pre-Calculation Summary
Formula Used
Optical Gain of Phototransistor = (([hP]*[c])/(Wavelength of Light*[Charge-e]))*(Collector Current of Phototransistor/Incident Power)
GO = (([hP]*[c])/(λ*[Charge-e]))*(Icol/Po)
This formula uses 3 Constants, 4 Variables
Constants Used
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
[hP] - Planck constant Value Taken As 6.626070040E-34
[c] - Light speed in vacuum Value Taken As 299792458.0
Variables Used
Optical Gain of Phototransistor - Optical Gain of Phototransistor is a measure of how well a medium amplifies photons by stimulated emission.
Wavelength of Light - (Measured in Meter) - Wavelength of Light refers to the distance between two consecutive peaks or troughs of an electromagnetic wave in the optical spectrum.
Collector Current of Phototransistor - (Measured in Ampere) - The Collector Current of Phototransistor is a measure of the sensitivity of the phototransistor. It describes the maximum allowable current load in the collector.
Incident Power - (Measured in Watt) - Incident Power w.r.t optics is the amount of optical power (light energy) incident on the photodetector.
STEP 1: Convert Input(s) to Base Unit
Wavelength of Light: 1.55 Micrometer --> 1.55E-06 Meter (Check conversion ​here)
Collector Current of Phototransistor: 5.66 Microampere --> 5.66E-06 Ampere (Check conversion ​here)
Incident Power: 1.75 Microwatt --> 1.75E-06 Watt (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
GO = (([hP]*[c])/(λ*[Charge-e]))*(Icol/Po) --> (([hP]*[c])/(1.55E-06*[Charge-e]))*(5.66E-06/1.75E-06)
Evaluating ... ...
GO = 2.5870988299136
STEP 3: Convert Result to Output's Unit
2.5870988299136 --> No Conversion Required
FINAL ANSWER
2.5870988299136 2.587099 <-- Optical Gain of Phototransistor
(Calculation completed in 00.004 seconds)

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25 Optical Detectors Calculators

SNR of Good Avalanche Photodiode ADP Receiver in decibels
​ Go Signal to Noise Ratio = 10*log10((Multiplication Factor^2*Photocurrent^2)/(2*[Charge-e]*Post Detection Bandwidth*(Photocurrent+Dark Current)*Multiplication Factor^2.3+((4*[BoltZ]*Temperature*Post Detection Bandwidth*1.26)/Load Resistance)))
Photocurrent due to Incident Light
​ Go Photocurrent = (Incident Power*[Charge-e]*(1-Reflection Coefficient))/([hP]*Frequency Of Incident Light)*(1-exp(-Absorption Coefficient*Width of Absorption Region))
Probability of Detecting Photons
​ Go Probability of Finding a Photon = ((Variance of Probability Distribution Function^(Number of Incident Photons))*exp(-Variance of Probability Distribution Function))/(Number of Incident Photons!)
Excess Avalanche Noise Factor
​ Go Excess Avalanche Noise Factor = Multiplication Factor*(1+((1-Impact Ionization Coefficient)/Impact Ionization Coefficient)*((Multiplication Factor-1)/Multiplication Factor)^2)
Total Photodiode Current
​ Go Output Current = Dark Current*(exp(([Charge-e]*Photodiode Voltage)/(2*[BoltZ]*Temperature))-1)+Photocurrent
Optical Gain of Phototransistors
​ Go Optical Gain of Phototransistor = (([hP]*[c])/(Wavelength of Light*[Charge-e]))*(Collector Current of Phototransistor/Incident Power)
Average Number of Photons Detected
​ Go Average Number Of Photons Detected = (Quantum Efficiency*Average Received Optical Power*Time Period)/(Frequency Of Incident Light*[hP])
Single Pass Phase Shift through Fabry-Perot Amplifier
​ Go Single-Pass Phase Shift = (pi*(Frequency Of Incident Light-Fabry–Perot Resonant Frequency))/Free Spectral Range of Fabry-Pérot Interferometer
Total Root Mean Square Noise Current
​ Go Total Root Mean Square Noise Current = sqrt(Total Shot Noise^2+Dark Current Noise^2+Thermal Noise Current^2)
Average Received Optical Power
​ Go Average Received Optical Power = (20.7*[hP]*Frequency Of Incident Light)/(Time Period*Quantum Efficiency)
Total Power Accepted by Fiber
​ Go Total Power Accepted by Fiber = Incident Power*(1-(8*Axial Displacement)/(3*pi*Radius of Core))
Multiplied Photocurrent
​ Go Multiplied Photocurrent = Optical Gain of Phototransistor*Responsivity of Photodetector*Incident Power
Temperature Effect on Dark Current
​ Go Dark Current in raised temperature = Dark Current*2^((Changed Temperature-Previous Temperature)/10)
Incident Photon Rate
​ Go Incident Photon Rate = Incident Optical Power/([hP]*Frequency Of Light Wave)
Maximum Photodiode 3 dB Bandwidth
​ Go Maximum 3db Bandwidth = Carrier Velocity/(2*pi*Depletion Layer Width)
Maximum 3dB Bandwidth of Metal Photodetector
​ Go Maximum 3db Bandwidth = 1/(2*pi*Transit Time*PhotoConductive Gain)
Bandwidth Penalty
​ Go Post Detection Bandwidth = 1/(2*pi*Load Resistance*Capacitance)
Long Wavelength Cutoff Point
​ Go Wavelength Cutoff Point = [hP]*[c]/Bandgap Energy
Quantum Efficiency of Photodetector
​ Go Quantum Efficiency = Number of Electrons/Number of Incident Photons
Multiplication Factor
​ Go Multiplication Factor = Output Current/Initial Photocurrent
Electron Rate in Detector
​ Go Electron Rate = Quantum Efficiency*Incident Photon Rate
Transit Time with respect to Minority Carrier Diffusion
​ Go Diffusion Time = Distance^2/(2*Diffusion Coefficient)
Longest Transit Time
​ Go Transit Time = Depletion Layer Width/Drift Velocity
3 dB Bandwidth of Metal Photodetectors
​ Go Maximum 3db Bandwidth = 1/(2*pi*Transit Time)
Detectivity of Photodetector
​ Go Detectivity = 1/Noise Equivalent Power

Optical Gain of Phototransistors Formula

Optical Gain of Phototransistor = (([hP]*[c])/(Wavelength of Light*[Charge-e]))*(Collector Current of Phototransistor/Incident Power)
GO = (([hP]*[c])/(λ*[Charge-e]))*(Icol/Po)

What is Optical Gain of Photodiodes?

Optical gain is a measure of the strength of optical amplification. It is a crucial requirement for the realization of a semiconductor laser as it describes the optical amplification in the semiconductor material. This optical gain is due to stimulated emission associated with light emission created by the recombination of electrons and holes.

How to Calculate Optical Gain of Phototransistors?

Optical Gain of Phototransistors calculator uses Optical Gain of Phototransistor = (([hP]*[c])/(Wavelength of Light*[Charge-e]))*(Collector Current of Phototransistor/Incident Power) to calculate the Optical Gain of Phototransistor, The Optical Gain of Phototransistors refers to its efficiency in converting light into an amplified electrical signal. This gain is generated through transistor action: photogenerated excess carriers transport to the base layer and modulate its potential barrier, causing current multiplication of the majority carrier diffusing from the emitter (injector). Optical Gain of Phototransistor is denoted by GO symbol.

How to calculate Optical Gain of Phototransistors using this online calculator? To use this online calculator for Optical Gain of Phototransistors, enter Wavelength of Light (λ), Collector Current of Phototransistor (Icol) & Incident Power (Po) and hit the calculate button. Here is how the Optical Gain of Phototransistors calculation can be explained with given input values -> 2.587099 = (([hP]*[c])/(1.55E-06*[Charge-e]))*(5.66E-06/1.75E-06).

FAQ

What is Optical Gain of Phototransistors?
The Optical Gain of Phototransistors refers to its efficiency in converting light into an amplified electrical signal. This gain is generated through transistor action: photogenerated excess carriers transport to the base layer and modulate its potential barrier, causing current multiplication of the majority carrier diffusing from the emitter (injector) and is represented as GO = (([hP]*[c])/(λ*[Charge-e]))*(Icol/Po) or Optical Gain of Phototransistor = (([hP]*[c])/(Wavelength of Light*[Charge-e]))*(Collector Current of Phototransistor/Incident Power). Wavelength of Light refers to the distance between two consecutive peaks or troughs of an electromagnetic wave in the optical spectrum, The Collector Current of Phototransistor is a measure of the sensitivity of the phototransistor. It describes the maximum allowable current load in the collector & Incident Power w.r.t optics is the amount of optical power (light energy) incident on the photodetector.
How to calculate Optical Gain of Phototransistors?
The Optical Gain of Phototransistors refers to its efficiency in converting light into an amplified electrical signal. This gain is generated through transistor action: photogenerated excess carriers transport to the base layer and modulate its potential barrier, causing current multiplication of the majority carrier diffusing from the emitter (injector) is calculated using Optical Gain of Phototransistor = (([hP]*[c])/(Wavelength of Light*[Charge-e]))*(Collector Current of Phototransistor/Incident Power). To calculate Optical Gain of Phototransistors, you need Wavelength of Light (λ), Collector Current of Phototransistor (Icol) & Incident Power (Po). With our tool, you need to enter the respective value for Wavelength of Light, Collector Current of Phototransistor & Incident Power and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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