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Overall drain current of PMOS transistor Calculator

Category Engineering ↺
Engineering Electrical ↺
Electrical Microelectronic Circuits ↺
Microelectronic-Circuits MOS Field-Effect Transistors (MOSFETs) ↺
Mos-Field-Effect-Transistors-(Mosfets) P-channel enhancement-type MOSFET ↺
✖Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance.ⓘ Process transconductance parameter [k'n]
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✖Aspect Ratio is the ratio of the .width of the channel to the length of the channel.ⓘ Aspect Ratio [AV]
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-10%
✖Voltage across the oxide due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.ⓘ Voltage across the oxide [VGS ]
+10%
-10%
✖Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency.ⓘ Threshold voltage [VT]
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-10%
✖The voltage between drain and source is applied positive voltage between drain and source, having induced a channel.ⓘ Voltage between drain and source [VDS]
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-10%
✖Positive dc voltage provided to the amplifierⓘ Positive dc voltage [Vcc]
+10%
-10%
✖Drain current below threshold voltage is defined as the subthreshold current and varies exponentially with gate to source voltage.ⓘ Overall drain current of PMOS transistor [Id]
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Payal Priya
Birsa Institute of Technology (BIT), Sindri
Payal Priya has created this Calculator and 300+ more calculators!
Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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11 Other formulas that you can solve using the same Inputs

Current flowing through the induced channel in the transistor
output current =(Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Effective voltage or overdrive voltage)*Voltage between drain and source GO
Conductance of channel of MOSFET when Vgs is given
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage) GO
Current flowing through the induced channel in the transistor when Vgs is given
output current =(Mobility of electron*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage))*Saturation voltage between drain and source GO
Drain current
Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source GO
Conductance of channel of MOSFETs
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Voltage across the oxide GO
Electric field across the length of the channel of NMOS transistor
Electric field across the length of the channel=Voltage between drain and source/Length of the Channel GO
Power delivered to the amplifier
power delivered=(Positive dc voltage*Positive dc current)+(Negative dc voltage*Negative dc current) GO
Saturation voltage between drain and source
Saturation voltage between drain and source=Gate to source voltage-Threshold voltage GO
Effective voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Overdrive Voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Saturation drain current
Saturation drain current=[BoltZ]*((Gate to source voltage-Threshold voltage)^2) GO

11 Other formulas that calculate the same Output

Current entering drain terminal of MOSFET when Vgs is given
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2))) GO
Current entering drain terminal of MOSFET
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source GO
Drain current
Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source GO
Current entering drain-source in triode region of NMOS
Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-Threshold voltage)*Voltage between drain and source-1/2*(Voltage between drain and source)^2) GO
Drain current when device parameter is given
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-Threshold voltage)^2*(1+Device parameter*Voltage between drain and source) GO
Current entering drain-source in triode region of NMOS when effective voltage is given
Drain current=Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source GO
Drain current when MOSFET operates as a voltage-controlled current source
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 GO
Current entering drain-source at saturation region of NMOS
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 GO
Drain current without channel-length modulation of MOSFET
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 GO
Drain current when MOSFET operates as a voltage-controlled current source in terms of Vov
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2 GO
Current entering drain-source at boundary of the saturation and triode region of NMOS
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage between drain and source)^2 GO

Overall drain current of PMOS transistor Formula

Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-modulus(Threshold voltage))^2*(1+Voltage between drain and source/modulus(Positive dc voltage))
I<sub>d</sub>=1/2*k'<sub>n</sub>*AV*(V<sub>GS</sub> -modulus(V<sub>T</sub>))^2*(1+V<sub>DS</sub>/modulus(Vcc))
More formulas
Transistor transconductance parameter of PMOS GO
Drain current in triode region of PMOS transistor GO
Drain current in triode region of PMOS transistor when V<sub>SD</sub> is given GO
Drain current in the saturation region of PMOS transistor GO
Drain current in the saturation region of PMOS transistor when V<sub>ov</sub> is given GO
Overdrive voltage of PMOS GO

What is drain current in MOSFET?

The drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Vgs characteristic is defined as the subthreshold slope, S, and is one of the most critical performance metrics for MOSFETs in logic applications.

Which way does current flow in a PMOS?

In an NMOS electrons are the charge carriers. So electrons travel from Source to Drain (meaning the current goes from Drain > Source.) In a PMOS holes are the charge carries. So holes travel from Source to Drain.

How to Calculate Overall drain current of PMOS transistor?

Overall drain current of PMOS transistor calculator uses Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-modulus(Threshold voltage))^2*(1+Voltage between drain and source/modulus(Positive dc voltage)) to calculate the Drain current, The Overall drain current of PMOS transistor, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current. Drain current and is denoted by Id symbol.

How to calculate Overall drain current of PMOS transistor using this online calculator? To use this online calculator for Overall drain current of PMOS transistor, enter Process transconductance parameter (k'n), Aspect Ratio (AV), Voltage across the oxide (VGS ), Threshold voltage (VT), Voltage between drain and source (VDS) and Positive dc voltage (Vcc) and hit the calculate button. Here is how the Overall drain current of PMOS transistor calculation can be explained with given input values -> 11520.03 = 1/2*2*5*(2-modulus(50))^2*(1+3E-06/modulus(1)).

FAQ

What is Overall drain current of PMOS transistor?
The Overall drain current of PMOS transistor, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current and is represented as Id=1/2*k'n*AV*(VGS -modulus(VT))^2*(1+VDS/modulus(Vcc)) or Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-modulus(Threshold voltage))^2*(1+Voltage between drain and source/modulus(Positive dc voltage)). Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance, Aspect Ratio is the ratio of the .width of the channel to the length of the channel, Voltage across the oxide due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide, Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency, The voltage between drain and source is applied positive voltage between drain and source, having induced a channel and Positive dc voltage provided to the amplifier.
How to calculate Overall drain current of PMOS transistor?
The Overall drain current of PMOS transistor, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current is calculated using Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-modulus(Threshold voltage))^2*(1+Voltage between drain and source/modulus(Positive dc voltage)). To calculate Overall drain current of PMOS transistor, you need Process transconductance parameter (k'n), Aspect Ratio (AV), Voltage across the oxide (VGS ), Threshold voltage (VT), Voltage between drain and source (VDS) and Positive dc voltage (Vcc). With our tool, you need to enter the respective value for Process transconductance parameter, Aspect Ratio, Voltage across the oxide, Threshold voltage, Voltage between drain and source and Positive dc voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Drain current?
In this formula, Drain current uses Process transconductance parameter, Aspect Ratio, Voltage across the oxide, Threshold voltage, Voltage between drain and source and Positive dc voltage. We can use 11 other way(s) to calculate the same, which is/are as follows -
  • Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source
  • Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source
  • Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2)))
  • Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-Threshold voltage)*Voltage between drain and source-1/2*(Voltage between drain and source)^2)
  • Drain current=Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage between drain and source)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-Threshold voltage)^2*(1+Device parameter*Voltage between drain and source)
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2
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