Treshold Voltage of MOSFET Solution

STEP 0: Pre-Calculation Summary
Formula Used
Threshold Voltage = Gate-Source Voltage-Effective Voltage
Vth = Vgs-Veff
This formula uses 3 Variables
Variables Used
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
Gate-Source Voltage - (Measured in Volt) - Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.
Effective Voltage - (Measured in Volt) - The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.
STEP 1: Convert Input(s) to Base Unit
Gate-Source Voltage: 4 Volt --> 4 Volt No Conversion Required
Effective Voltage: 1.7 Volt --> 1.7 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vth = Vgs-Veff --> 4-1.7
Evaluating ... ...
Vth = 2.3
STEP 3: Convert Result to Output's Unit
2.3 Volt --> No Conversion Required
FINAL ANSWER
2.3 Volt <-- Threshold Voltage
(Calculation completed in 00.004 seconds)

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Birsa Institute of Technology (BIT), Sindri
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20 Voltage Calculators

Conductance of Channel of MOSFET using Gate to Source Voltage
Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)
Common Gate Output Voltage
Go Output Voltage = -(Transconductance*Critical Voltage)*((Load Resistance*Gate Resistance)/(Gate Resistance+Load Resistance))
Output Voltage at Drain Q1 of MOSFET given Common-Mode Signal
Go Drain Voltage Q1 = -Output Resistance*(Transconductance*Common Mode Input Signal)/(1+(2*Transconductance*Output Resistance))
Voltage across Gate and Source of MOSFET on Operation with Differential Input Voltage
Go Gate-Source Voltage = Threshold Voltage+sqrt((2*DC Bias Current)/(Process Transconductance Parameter*Aspect Ratio))
Source Input Voltage
Go Source Input Voltage = Input Voltage*(Input Amplifier Resistance/(Input Amplifier Resistance+Equivalent Source Resistance))
Input Gate-to-Source Voltage
Go Critical Voltage = (Input Amplifier Resistance/(Input Amplifier Resistance+Equivalent Source Resistance))*Input Voltage
Output Voltage at Drain Q2 of MOSFET given Common-Mode Signal
Go Drain Voltage Q2 = -(Output Resistance/((1/Transconductance)+2*Output Resistance))*Common Mode Input Signal
Voltage across Gate and Source of MOSFET given Input Current
Go Gate-Source Voltage = Input Current/(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance))
Positive Voltage given Device Parameter in MOSFET
Go Input Current = Gate-Source Voltage*(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance))
Overdrive Voltage when MOSFET Acts as Amplifier with Load Resistance
Go Transconductance = Total Current/(Common Mode Input Signal-(2*Total Current*Output Resistance))
Incremental Voltage Signal of Differential Amplifier
Go Common Mode Input Signal = (Total Current/Transconductance)+(2*Total Current*Output Resistance)
Voltage at Drain Q1 of MOSFET
Go Output Voltage = -(Total Load Resistance of MOSFET/(2*Output Resistance))*Common Mode Input Signal
Voltage at Drain Q2 in MOSFET
Go Output Voltage = -(Total Load Resistance of MOSFET/(2*Output Resistance))*Common Mode Input Signal
Saturation Voltage of MOSFET
Go Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage
Voltage across Gate to Source of MOSFET on Differential Input Voltage given Overdrive Voltage
Go Gate-Source Voltage = Threshold Voltage+1.4*Effective Voltage
Threshold Voltage when MOSFET Acts as Amplifier
Go Threshold Voltage = Gate-Source Voltage-Effective Voltage
Treshold Voltage of MOSFET
Go Threshold Voltage = Gate-Source Voltage-Effective Voltage
Overdrive Voltage
Go Overdrive Voltage = (2*Drain Current)/Transconductance
Output Voltage at Drain Q1 of MOSFET
Go Drain Voltage Q1 = -(Output Resistance*Total Current)
Output Voltage at Drain Q2 of MOSFET
Go Drain Voltage Q2 = -(Output Resistance*Total Current)

15 MOSFET Characterstics Calculators

Conductance of Channel of MOSFET using Gate to Source Voltage
Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)
Voltage Gain given Load Resistance of MOSFET
Go Voltage Gain = Transconductance*(1/(1/Load Resistance+1/Output Resistance))/(1+Transconductance*Source Resistance)
Transition Frequency of MOSFET
Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))
Maximum Voltage Gain at Bias Point
Go Maximum Voltage Gain = 2*(Supply Voltage-Effective Voltage)/(Effective Voltage)
Voltage Gain using Small Signal
Go Voltage Gain = Transconductance*1/(1/Load Resistance+1/Finite Resistance)
Gate to Source Channel Width of MOSFET
Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)
Voltage Gain given Drain Voltage
Go Voltage Gain = (Drain Current*Load Resistance*2)/Effective Voltage
Body Effect on Transconductance
Go Body Transconductance = Change in Threshold to Base Voltage*Transconductance
Saturation Voltage of MOSFET
Go Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage
Bias Voltage of MOSFET
Go Total Instantaneous Bias Voltage = DC Bias Voltage+DC Voltage
Maximum Voltage Gain given all Voltages
Go Maximum Voltage Gain = (Supply Voltage-0.3)/Thermal Voltage
Amplification Factor in Small Signal MOSFET Model
Go Amplification Factor = Transconductance*Output Resistance
Treshold Voltage of MOSFET
Go Threshold Voltage = Gate-Source Voltage-Effective Voltage
Transconductance in MOSFET
Go Transconductance = (2*Drain Current)/Overdrive Voltage
Conductance in Linear Resistance of MOSFET
Go Conductance of Channel = 1/Linear Resistance

Treshold Voltage of MOSFET Formula

Threshold Voltage = Gate-Source Voltage-Effective Voltage
Vth = Vgs-Veff

What is threshold voltage?

The value of voltage across the oxide at which a sufficient number of mobile electrons accumulate in the channel region to form a conducting channel is called the threshold voltage and is denoted as Vt.

Explain the whole process of the channel region of the MOSFET forming a parallel-plate capacitor.

The gate and the channel region of the MOSFET form a parallel-plate capacitor, with
the oxide layer acting as the capacitor dielectric. The positive gate voltage causes a positive charge to accumulate on the top plate of the capacitor (the gate electrode). The corresponding negative charge on the bottom plate is formed by the electrons in the induced channel. An electric field thus develops in the vertical direction. It is this field that controls the amount of charge in the channel, and thus it determines the channel conductivity and, in turn, the current that will flow through the channel when a voltage is applied.

How to Calculate Treshold Voltage of MOSFET?

Treshold Voltage of MOSFET calculator uses Threshold Voltage = Gate-Source Voltage-Effective Voltage to calculate the Threshold Voltage, The Treshold Voltage of MOSFET is defined as the voltage at which the transistor begins to turn on or conduct current. It is typically measured at the drain-source terminal and is an important parameter in determining the performance of the MOSFET. Threshold Voltage is denoted by Vth symbol.

How to calculate Treshold Voltage of MOSFET using this online calculator? To use this online calculator for Treshold Voltage of MOSFET, enter Gate-Source Voltage (Vgs) & Effective Voltage (Veff) and hit the calculate button. Here is how the Treshold Voltage of MOSFET calculation can be explained with given input values -> 2.3 = 4-1.7.

FAQ

What is Treshold Voltage of MOSFET?
The Treshold Voltage of MOSFET is defined as the voltage at which the transistor begins to turn on or conduct current. It is typically measured at the drain-source terminal and is an important parameter in determining the performance of the MOSFET and is represented as Vth = Vgs-Veff or Threshold Voltage = Gate-Source Voltage-Effective Voltage. Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior & The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.
How to calculate Treshold Voltage of MOSFET?
The Treshold Voltage of MOSFET is defined as the voltage at which the transistor begins to turn on or conduct current. It is typically measured at the drain-source terminal and is an important parameter in determining the performance of the MOSFET is calculated using Threshold Voltage = Gate-Source Voltage-Effective Voltage. To calculate Treshold Voltage of MOSFET, you need Gate-Source Voltage (Vgs) & Effective Voltage (Veff). With our tool, you need to enter the respective value for Gate-Source Voltage & Effective Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Threshold Voltage?
In this formula, Threshold Voltage uses Gate-Source Voltage & Effective Voltage. We can use 1 other way(s) to calculate the same, which is/are as follows -
  • Threshold Voltage = Gate-Source Voltage-Effective Voltage
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