PN Junction Capacitance Calculator

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✖The PN Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.ⓘ PN Junction Area [A_pn]			+10% -10%
✖Relative Permittivity is a measure of a material's ability to store electrical energy in an electric field.ⓘ Relative Permittivity [ε_r]			+10% -10%
✖Voltage Across PN Junction is the built-in potential across the pn junction of a semiconductor without any external bias.ⓘ Voltage Across PN Junction [V₀]			+10% -10%
✖Reverse Bias Voltage is the negative external voltage applied to the pn junction.ⓘ Reverse Bias Voltage [V]			+10% -10%
✖Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.ⓘ Acceptor Concentration [N_A]			+10% -10%
✖Donor Concentration refers to the concentration of donor dopant atoms introduced into a semiconductor material to increase the number of free electrons.ⓘ Donor Concentration [N_D]			+10% -10%

✖Junction Capacitance refers to the capacitance associated with the p-n junction formed between two semiconductor regions in a semiconductor device, such as a diode or a transistor.ⓘ PN Junction Capacitance [C_j]

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Formula

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PN Junction Capacitance

Formula

`"C"_{"j"} = "A"_{"pn"}/2*sqrt((2*"[Charge-e]"*"ε"_{"r"}*"[Permitivity-silicon]")/("V"_{"0"}-("V"))*(("N"_{"A"}*"N"_{"D"})/("N"_{"A"}+"N"_{"D"})))`

Example

`"1.9E^6fF"="4.8µm²"/2*sqrt((2*"[Charge-e]"*"78F/m"*"[Permitivity-silicon]")/("0.6V"-("-4V"))*(("1e+22/m³"*"1e+24/m³")/("1e+22/m³"+"1e+24/m³")))`

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PN Junction Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Junction Capacitance = PN Junction Area/2*sqrt((2*[Charge-e]*Relative Permittivity*[Permitivity-silicon])/(Voltage Across PN Junction-(Reverse Bias Voltage))*((Acceptor Concentration*Donor Concentration)/(Acceptor Concentration+Donor Concentration)))
C_j = A_pn/2*sqrt((2*[Charge-e]*ε_r*[Permitivity-silicon])/(V₀-(V))*((N_A*N_D)/(N_A+N_D)))
This formula uses 2 Constants, 1 Functions, 7 Variables

Constants Used

[Permitivity-silicon] - Permittivity of silicon Value Taken As 11.7
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Junction Capacitance - (Measured in Farad) - Junction Capacitance refers to the capacitance associated with the p-n junction formed between two semiconductor regions in a semiconductor device, such as a diode or a transistor.
PN Junction Area - (Measured in Square Meter) - The PN Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.
Relative Permittivity - (Measured in Farad per Meter) - Relative Permittivity is a measure of a material's ability to store electrical energy in an electric field.
Voltage Across PN Junction - (Measured in Volt) - Voltage Across PN Junction is the built-in potential across the pn junction of a semiconductor without any external bias.
Reverse Bias Voltage - (Measured in Volt) - Reverse Bias Voltage is the negative external voltage applied to the pn junction.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.
Donor Concentration - (Measured in 1 per Cubic Meter) - Donor Concentration refers to the concentration of donor dopant atoms introduced into a semiconductor material to increase the number of free electrons.

STEP 1: Convert Input(s) to Base Unit

PN Junction Area: 4.8 Square Micrometer --> 4.8E-12 Square Meter (Check conversion here)
Relative Permittivity: 78 Farad per Meter --> 78 Farad per Meter No Conversion Required
Voltage Across PN Junction: 0.6 Volt --> 0.6 Volt No Conversion Required
Reverse Bias Voltage: -4 Volt --> -4 Volt No Conversion Required
Acceptor Concentration: 1E+22 1 per Cubic Meter --> 1E+22 1 per Cubic Meter No Conversion Required
Donor Concentration: 1E+24 1 per Cubic Meter --> 1E+24 1 per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_j = A_pn/2*sqrt((2*[Charge-e]*ε_r*[Permitivity-silicon])/(V₀-(V))*((N_A*N_D)/(N_A+N_D))) --> 4.8E-12/2*sqrt((2*[Charge-e]*78*[Permitivity-silicon])/(0.6-((-4)))*((1E+22*1E+24)/(1E+22+1E+24)))

Evaluating ... ...

C_j = 1.9040662888657E-09

STEP 3: Convert Result to Output's Unit

1.9040662888657E-09 Farad -->1904066.2888657 Femtofarad (Check conversion here)

FINAL ANSWER

1904066.2888657 ≈ 1.9E+6 Femtofarad <-- Junction Capacitance

(Calculation completed in 00.004 seconds)

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Created by Priyanka G Chalikar

The National Institute Of Engineering (NIE), Mysuru

Priyanka G Chalikar has created this Calculator and 10+ more calculators!

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Dayananda Sagar College Of Engineering (DSCE), Banglore

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< 14 Devices with Optical Components Calculators

PN Junction Capacitance

Go Junction Capacitance = PN Junction Area/2*sqrt((2*[Charge-e]*Relative Permittivity*[Permitivity-silicon])/(Voltage Across PN Junction-(Reverse Bias Voltage))*((Acceptor Concentration*Donor Concentration)/(Acceptor Concentration+Donor Concentration)))

Electron Concentration under Unbalanced Condition

Go Electron Concentration = Intrinsic Electron Concentration*exp((Quasi Fermi Level of Electrons-Intrinsic Energy Level of Semiconductor)/([BoltZ]*Absolute Temperature))

Diffusion Length of Transition Region

Go Diffusion Length of Transition Region = Optical Current/(Charge*PN Junction Area*Optical Generation Rate)-(Transition Width+Length of P-Side Junction)

Current Due to Optically Generated Carrier

Go Optical Current = Charge*PN Junction Area*Optical Generation Rate*(Transition Width+Diffusion Length of Transition Region+Length of P-Side Junction)

Peak Retardation

Go Peak Retardation = (2*pi)/Wavelength of Light*Length of Fiber*Refractive Index^3*Modulation Voltage

Maximum Acceptance Angle of Compound Lens

Go Acceptance Angle = asin(Refractive Index of Medium 1*Radius of Lens*sqrt(Positive Constant))

Effective Density of States in Conduction Band

Go Effective Density of States = 2*(2*pi*Effective Mass of Electron*[BoltZ]*Absolute Temperature/[hP]^2)^(3/2)

Diffusion Coefficient of Electron

Go Electron Diffusion Coefficient = Mobility of Electron*[BoltZ]*Absolute Temperature/[Charge-e]

Diffraction using Fresnel-Kirchoff Formula

Go Diffraction Angle = asin(1.22*Wavelength of Visible Light/Diameter of Aperture)

Fringe Spacing given Apex Angle

Go Fringe Space = Wavelength of Visible Light/(2*tan(Angle of Interference))

Excitation Energy

Go Excitation Energy = 1.6*10^-19*13.6*(Effective Mass of Electron/[Mass-e])*(1/[Permitivity-silicon]^2)

Brewsters Angle

Go Brewster's Angle = arctan(Refractive Index of Medium 1/Refractive Index)

Angle of Rotation of Plane of Polarization

Go Angle of Rotation = 1.8*Magnetic Flux Density*Length of Medium

Apex Angle

Go Apex Angle = tan(Alpha)

PN Junction Capacitance Formula

What happens to the junction capacitance when forward biased?

In forward bias condition the junction capacitance is swamped by another capacitive effect which gives rise to the charge storage or diffusion capacitance Cd.

How to Calculate PN Junction Capacitance?

PN Junction Capacitance calculator uses Junction Capacitance = PN Junction Area/2*sqrt((2*[Charge-e]*Relative Permittivity*[Permitivity-silicon])/(Voltage Across PN Junction-(Reverse Bias Voltage))*((Acceptor Concentration*Donor Concentration)/(Acceptor Concentration+Donor Concentration))) to calculate the Junction Capacitance, The PN Junction Capacitance formula is defined as the capacitance associated with the depletion region of a pn junction due to charges accumulated. It is prominent in the reverse biased condition because, this condition increases the barrier potential and hence the capacitance across it. Junction Capacitance is denoted by C_j symbol.

How to calculate PN Junction Capacitance using this online calculator? To use this online calculator for PN Junction Capacitance, enter PN Junction Area (A_pn), Relative Permittivity (ε_r), Voltage Across PN Junction (V₀), Reverse Bias Voltage (V), Acceptor Concentration (N_A) & Donor Concentration (N_D) and hit the calculate button. Here is how the PN Junction Capacitance calculation can be explained with given input values -> 1.9E+21 = 4.8E-12/2*sqrt((2*[Charge-e]*78*[Permitivity-silicon])/(0.6-((-4)))*((1E+22*1E+24)/(1E+22+1E+24))).

FAQ

What is PN Junction Capacitance?

The PN Junction Capacitance formula is defined as the capacitance associated with the depletion region of a pn junction due to charges accumulated. It is prominent in the reverse biased condition because, this condition increases the barrier potential and hence the capacitance across it and is represented as C_j = A_pn/2*sqrt((2*[Charge-e]*ε_r*[Permitivity-silicon])/(V₀-(V))*((N_A*N_D)/(N_A+N_D))) or Junction Capacitance = PN Junction Area/2*sqrt((2*[Charge-e]*Relative Permittivity*[Permitivity-silicon])/(Voltage Across PN Junction-(Reverse Bias Voltage))*((Acceptor Concentration*Donor Concentration)/(Acceptor Concentration+Donor Concentration))). The PN Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode, Relative Permittivity is a measure of a material's ability to store electrical energy in an electric field, Voltage Across PN Junction is the built-in potential across the pn junction of a semiconductor without any external bias, Reverse Bias Voltage is the negative external voltage applied to the pn junction, Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material & Donor Concentration refers to the concentration of donor dopant atoms introduced into a semiconductor material to increase the number of free electrons.

How to calculate PN Junction Capacitance?

The PN Junction Capacitance formula is defined as the capacitance associated with the depletion region of a pn junction due to charges accumulated. It is prominent in the reverse biased condition because, this condition increases the barrier potential and hence the capacitance across it is calculated using Junction Capacitance = PN Junction Area/2*sqrt((2*[Charge-e]*Relative Permittivity*[Permitivity-silicon])/(Voltage Across PN Junction-(Reverse Bias Voltage))*((Acceptor Concentration*Donor Concentration)/(Acceptor Concentration+Donor Concentration))). To calculate PN Junction Capacitance, you need PN Junction Area (A_pn), Relative Permittivity (ε_r), Voltage Across PN Junction (V₀), Reverse Bias Voltage (V), Acceptor Concentration (N_A) & Donor Concentration (N_D). With our tool, you need to enter the respective value for PN Junction Area, Relative Permittivity, Voltage Across PN Junction, Reverse Bias Voltage, Acceptor Concentration & Donor Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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