Potential from Drain to Source Solution

STEP 0: Pre-Calculation Summary
Formula Used
Drain to Source Potential = (Threshold Voltage DIBL-Threshold Voltage)/DIBL Coefficient
Vds = (Vt0-Vt)/η
This formula uses 4 Variables
Variables Used
Drain to Source Potential - (Measured in Volt) - Drain to source Potential is potential between drain and source.
Threshold Voltage DIBL - (Measured in Volt) - Threshold Voltage dibl is defined as the minimum voltage required by the source junction of the body potential, when source is at body potential.
Threshold Voltage - (Measured in Volt) - Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.
DIBL Coefficient - DIBL coefficient in a cmos device is resprented typically on the order of 0.1.
STEP 1: Convert Input(s) to Base Unit
Threshold Voltage DIBL: 0.59 Volt --> 0.59 Volt No Conversion Required
Threshold Voltage: 0.3 Volt --> 0.3 Volt No Conversion Required
DIBL Coefficient: 0.2 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vds = (Vt0-Vt)/η --> (0.59-0.3)/0.2
Evaluating ... ...
Vds = 1.45
STEP 3: Convert Result to Output's Unit
1.45 Volt --> No Conversion Required
FINAL ANSWER
1.45 Volt <-- Drain to Source Potential
(Calculation completed in 00.004 seconds)

Credits

Created by Shobhit Dimri
Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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Vishwakarma Government Engineering College (VGEC), Ahmedabad
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16 Analog VLSI Design Calculators

Potential between Source to Body
Go Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration))
Gate to Drain Capacitance
Go Gate to Drain Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Source Capacitance)
Gate to Base Capacitance
Go Gate to Base Capacitance = Gate Capacitance-(Gate to Source Capacitance+Gate to Drain Capacitance)
Gate to Source Capacitance
Go Gate to Source Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Drain Capacitance)
Drain Voltage
Go Base Collector Voltage = sqrt(Dynamic Power/(Frequency*Capacitance))
Potential from Drain to Source
Go Drain to Source Potential = (Threshold Voltage DIBL-Threshold Voltage)/DIBL Coefficient
Gate to Channel Voltage
Go Gate to Channel Voltage = (Channel Charge/Gate Capacitance)+Threshold Voltage
Gate to Collector Potential
Go Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2
Gate to Source Potential
Go Gate to Source Potential = 2*Gate to Channel Voltage-Gate to Drain Potential
Gate to Drain Potential
Go Gate to Drain Potential = 2*Gate to Channel Voltage-Gate to Source Potential
Minimum High Output Voltage
Go Minimum High Output Voltage = High Noise Margin+Minimum High Input Voltage
Minimum High Input Voltage
Go Minimum High Input Voltage = Minimum High Output Voltage-High Noise Margin
High Noise Margin
Go High Noise Margin = Minimum High Output Voltage-Minimum High Input Voltage
Maximum Low Output Voltage
Go Maximum Low Output Voltage = Maximum Low Input Voltage-Low Noise Margin
Maximum Low Input Voltage
Go Maximum Low Input Voltage = Low Noise Margin+Maximum Low Output Voltage
Low Noise Margin
Go Low Noise Margin = Maximum Low Input Voltage-Maximum Low Output Voltage

Potential from Drain to Source Formula

Drain to Source Potential = (Threshold Voltage DIBL-Threshold Voltage)/DIBL Coefficient
Vds = (Vt0-Vt)/η

What is depletion region?

When positive voltage is transmitted across Gate, it causes the free holes (positive charge) to be pushed back or repelled from the region of the substrate under the Gate. When these holes are pushed down the substrate, they leave behind a carrier depletion region.

How to Calculate Potential from Drain to Source?

Potential from Drain to Source calculator uses Drain to Source Potential = (Threshold Voltage DIBL-Threshold Voltage)/DIBL Coefficient to calculate the Drain to Source Potential, The Potential from drain to source formula is defined as the potential difference between the drain junction and the source junction. Drain to Source Potential is denoted by Vds symbol.

How to calculate Potential from Drain to Source using this online calculator? To use this online calculator for Potential from Drain to Source, enter Threshold Voltage DIBL (Vt0), Threshold Voltage (Vt) & DIBL Coefficient (η) and hit the calculate button. Here is how the Potential from Drain to Source calculation can be explained with given input values -> 1.45 = (0.59-0.3)/0.2.

FAQ

What is Potential from Drain to Source?
The Potential from drain to source formula is defined as the potential difference between the drain junction and the source junction and is represented as Vds = (Vt0-Vt)/η or Drain to Source Potential = (Threshold Voltage DIBL-Threshold Voltage)/DIBL Coefficient. Threshold Voltage dibl is defined as the minimum voltage required by the source junction of the body potential, when source is at body potential, Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals & DIBL coefficient in a cmos device is resprented typically on the order of 0.1.
How to calculate Potential from Drain to Source?
The Potential from drain to source formula is defined as the potential difference between the drain junction and the source junction is calculated using Drain to Source Potential = (Threshold Voltage DIBL-Threshold Voltage)/DIBL Coefficient. To calculate Potential from Drain to Source, you need Threshold Voltage DIBL (Vt0), Threshold Voltage (Vt) & DIBL Coefficient (η). With our tool, you need to enter the respective value for Threshold Voltage DIBL, Threshold Voltage & DIBL Coefficient and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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