Thermal Generation Rate Calculator

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✖Proportionality for recombination is denoted by the symbol αr.ⓘ Proportionality for Recombination [α_r]			+10% -10%
✖Intrinsic Carrier Concentration is used to describe the concentration of charge carriers (electrons and holes) in an intrinsic or undoped semiconductor material at thermal equilibrium.ⓘ Intrinsic Carrier Concentration [n_i]			+10% -10%

✖Thermal Generation recombination rates that are balanced so that the net charge carrier density remains constant.ⓘ Thermal Generation Rate [TG]

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Formula

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Thermal Generation Rate

Formula

`"TG" = "α"_{"r"}*("n"_{"i"}^2)`

Example

`"8.7E^10"="1.2e-6m³/s"*(("2.7e8/m³")^2)`

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Thermal Generation Rate Solution

STEP 0: Pre-Calculation Summary

Formula Used

Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration^2)
TG = α_r*(n_i^2)
This formula uses 3 Variables

Variables Used

Thermal Generation - Thermal Generation recombination rates that are balanced so that the net charge carrier density remains constant.
Proportionality for Recombination - (Measured in Cubic Meter per Second) - Proportionality for recombination is denoted by the symbol αr.
Intrinsic Carrier Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Carrier Concentration is used to describe the concentration of charge carriers (electrons and holes) in an intrinsic or undoped semiconductor material at thermal equilibrium.

STEP 1: Convert Input(s) to Base Unit

Proportionality for Recombination: 1.2E-06 Cubic Meter per Second --> 1.2E-06 Cubic Meter per Second No Conversion Required
Intrinsic Carrier Concentration: 270000000 1 per Cubic Meter --> 270000000 1 per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

TG = α_r*(n_i^2) --> 1.2E-06*(270000000^2)

Evaluating ... ...

TG = 87480000000

STEP 3: Convert Result to Output's Unit

87480000000 --> No Conversion Required

FINAL ANSWER

87480000000 ≈ 8.7E+10 <-- Thermal Generation

(Calculation completed in 00.004 seconds)

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Created by Vidyashree V

BMS College of Engineering (BMSCE), Bangalore

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BMS College Of Engineering (BMSCE), Banglore

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< 20 Energy Band & Charge Carrier Calculators

Intrinsic Carrier Concentration

Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band)*exp(-Energy Gap/(2*[BoltZ]*Temperature))

Carrier Lifetime

Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))

Energy of Electron given Coulomb's Constant

Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)

Steady State Electron Concentration

Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration

Concentration in Conduction Band

Go Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function

Effective Density of State

Go Effective Density of State in Conduction Band = Electron Concentration in Conduction Band/Fermi Function

Fermi Function

Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band

Effective Density State in Valence Band

Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)

Concentration of Holes in Valence Band

Go Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)

Recombination Lifetime

Go Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1

Distribution Coefficient

Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid

Liquid Concentration

Go Impurity Concentration in Liquid = Impurity Concentration in Solid/Distribution Coefficient

Net Rate of Change in Conduction Band

Go Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)

Thermal Generation Rate

Go Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration^2)

Excess Carrier Concentration

Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime

Optical Generation Rate

Go Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime

Photoelectron Energy

Go Photoelectron Energy = [hP]*Frequency of Incident Light

Conduction Band Energy

Go Conduction Band Energy = Energy Gap+Valence Band Energy

Valence Band Energy

Go Valence Band Energy = Conduction Band Energy-Energy Gap

Energy Gap

Go Energy Gap = Conduction Band Energy-Valence Band Energy

Thermal Generation Rate Formula

Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration^2)
TG = α_r*(n_i^2)

What is recombination?

The process of electron and hole annihilation is known as recombination. If the energy released through recombination is in the form of a photon, the process is known as radiative-recombination and is most common for electrons moving fully from the conduction to the valence band.

How to Calculate Thermal Generation Rate?

Thermal Generation Rate calculator uses Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration^2) to calculate the Thermal Generation, The Thermal Generation Rate formula formula is defined as recombination rates that are balanced so that the net charge carrier density remains constant. Thermal Generation is denoted by TG symbol.

How to calculate Thermal Generation Rate using this online calculator? To use this online calculator for Thermal Generation Rate, enter Proportionality for Recombination (α_r) & Intrinsic Carrier Concentration (n_i) and hit the calculate button. Here is how the Thermal Generation Rate calculation can be explained with given input values -> 8.7E+10 = 1.2E-06*(270000000^2).

FAQ

What is Thermal Generation Rate?

The Thermal Generation Rate formula formula is defined as recombination rates that are balanced so that the net charge carrier density remains constant and is represented as TG = α_r*(n_i^2) or Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration^2). Proportionality for recombination is denoted by the symbol αr & Intrinsic Carrier Concentration is used to describe the concentration of charge carriers (electrons and holes) in an intrinsic or undoped semiconductor material at thermal equilibrium.

How to calculate Thermal Generation Rate?

The Thermal Generation Rate formula formula is defined as recombination rates that are balanced so that the net charge carrier density remains constant is calculated using Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration^2). To calculate Thermal Generation Rate, you need Proportionality for Recombination (α_r) & Intrinsic Carrier Concentration (n_i). With our tool, you need to enter the respective value for Proportionality for Recombination & Intrinsic Carrier Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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