Small-Signal Diffusion Capacitance Solution

STEP 0: Pre-Calculation Summary
Formula Used
Emitter-Base Capacitance = Device Constant*Transconductance
Ceb = 𝛕F*Gm
This formula uses 3 Variables
Variables Used
Emitter-Base Capacitance - (Measured in Farad) - Emitter-base capacitance is the capacitance between the emitter and the base.
Device Constant - (Measured in Second) - A device constant value is defined once and can be referenced many times throughout a program.
Transconductance - (Measured in Siemens) - Transconductance is the ratio of the change in current at the output terminal to the change in the voltage at the input terminal of an active device.
STEP 1: Convert Input(s) to Base Unit
Device Constant: 2 Second --> 2 Second No Conversion Required
Transconductance: 1.72 Millisiemens --> 0.00172 Siemens (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ceb = 𝛕F*Gm --> 2*0.00172
Evaluating ... ...
Ceb = 0.00344
STEP 3: Convert Result to Output's Unit
0.00344 Farad -->3440 Microfarad (Check conversion ​here)
FINAL ANSWER
3440 Microfarad <-- Emitter-Base Capacitance
(Calculation completed in 00.004 seconds)

Credits

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Created by Payal Priya
Birsa Institute of Technology (BIT), Sindri
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Vishwakarma Government Engineering College (VGEC), Ahmedabad
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11 Internal Capacitive Effects and High Frequency Model Calculators

Collector-Base Capacitance
​ Go Collector Base Capacitance = Emitter Base Junction Area*sqrt((Charge*Permittivity*Doping Density)/(2*(Built In Potential+Reverse Bias Junction)))
Collector-Base Junction Capacitance
​ Go Collector-Base Junction Capacitance = Collector-Base Junction Capacitance at 0 Voltage/(1+(Reverse-Bias Voltage/Built-In Voltage))^Grading Coefficient
Transition Frequency of BJT
​ Go Transition Frequency = Transconductance/(2*pi*(Emitter-Base Capacitance+Collector-Base Junction Capacitance))
Concentration of Electrons Injected from Emitter to Base
​ Go Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage)
Unity-Gain Bandwidth of BJT
​ Go Unity-Gain Bandwidth = Transconductance/(Emitter-Base Capacitance+Collector-Base Junction Capacitance)
Small-Signal Diffusion Capacitance of BJT
​ Go Emitter-Base Capacitance = Device Constant*(Collector Current/Threshold Voltage)
Thermal Equilibrium Concentration of Minority Charge Carrier
​ Go Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base
Small-Signal Diffusion Capacitance
​ Go Emitter-Base Capacitance = Device Constant*Transconductance
Stored Electron Charge in Base of BJT
​ Go Stored Electron Charge = Device Constant*Collector Current
Transition Frequency of BJT given Device Constant
​ Go Transition Frequency = 1/(2*pi*Device Constant)
Base-Emitter Junction Capacitance
​ Go Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance

Small-Signal Diffusion Capacitance Formula

Emitter-Base Capacitance = Device Constant*Transconductance
Ceb = 𝛕F*Gm

What is the difference between transition capacitance and diffusion capacitance?

Transition capacitance is basically the change of charge stored in the depletion region with respect to a change in voltage. And Diffusion capacitance is the capacitance caused due to movement of charge carriers between from anode to cathode in the forward-biased mode.

How to Calculate Small-Signal Diffusion Capacitance?

Small-Signal Diffusion Capacitance calculator uses Emitter-Base Capacitance = Device Constant*Transconductance to calculate the Emitter-Base Capacitance, The Small-signal diffusion capacitance formula is defined as the capacitance due to transport of charge carriers between two terminals of a device, for example, the diffusion of carriers from anode to cathode in the forward-bias mode of a diode or from emitter to base forward-biased junction for a transistor. Emitter-Base Capacitance is denoted by Ceb symbol.

How to calculate Small-Signal Diffusion Capacitance using this online calculator? To use this online calculator for Small-Signal Diffusion Capacitance, enter Device Constant (𝛕F) & Transconductance (Gm) and hit the calculate button. Here is how the Small-Signal Diffusion Capacitance calculation can be explained with given input values -> 3.4E+9 = 2*0.00172.

FAQ

What is Small-Signal Diffusion Capacitance?
The Small-signal diffusion capacitance formula is defined as the capacitance due to transport of charge carriers between two terminals of a device, for example, the diffusion of carriers from anode to cathode in the forward-bias mode of a diode or from emitter to base forward-biased junction for a transistor and is represented as Ceb = 𝛕F*Gm or Emitter-Base Capacitance = Device Constant*Transconductance. A device constant value is defined once and can be referenced many times throughout a program & Transconductance is the ratio of the change in current at the output terminal to the change in the voltage at the input terminal of an active device.
How to calculate Small-Signal Diffusion Capacitance?
The Small-signal diffusion capacitance formula is defined as the capacitance due to transport of charge carriers between two terminals of a device, for example, the diffusion of carriers from anode to cathode in the forward-bias mode of a diode or from emitter to base forward-biased junction for a transistor is calculated using Emitter-Base Capacitance = Device Constant*Transconductance. To calculate Small-Signal Diffusion Capacitance, you need Device Constant (𝛕F) & Transconductance (Gm). With our tool, you need to enter the respective value for Device Constant & Transconductance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Emitter-Base Capacitance?
In this formula, Emitter-Base Capacitance uses Device Constant & Transconductance. We can use 1 other way(s) to calculate the same, which is/are as follows -
  • Emitter-Base Capacitance = Device Constant*(Collector Current/Threshold Voltage)
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