Base-Emitter Junction Capacitance Calculator

✖Base–Emitter Junction Capacitance is the capacitance of the junction that is forward-biased and is represented by a diode.ⓘ Base-Emitter Junction Capacitance [C]

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Formula

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Base-Emitter Junction Capacitance

Formula

`"C" = 2*"C"_{"eb"}`

Example

`"3μF"=2*"1.5μF"`

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Base-Emitter Junction Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance
C = 2*C_eb
This formula uses 2 Variables

Variables Used

Base–Emitter Junction Capacitance - (Measured in Farad) - Base–Emitter Junction Capacitance is the capacitance of the junction that is forward-biased and is represented by a diode.
Emitter-Base Capacitance - (Measured in Farad) - Emitter-base capacitance is the capacitance between the emitter and the base.

STEP 1: Convert Input(s) to Base Unit

Emitter-Base Capacitance: 1.5 Microfarad --> 1.5E-06 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C = 2*C_eb --> 2*1.5E-06

Evaluating ... ...

C = 3E-06

STEP 3: Convert Result to Output's Unit

3E-06 Farad -->3 Microfarad (Check conversion here)

FINAL ANSWER

3 Microfarad <-- Base–Emitter Junction Capacitance

(Calculation completed in 00.004 seconds)

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< 10+ Internal Capacitive Effects and High Frequency Model Calculators

Collector-Base Junction Capacitance

Go Collector-Base Junction Capacitance = Collector-Base Junction Capacitance at 0 Voltage/(1+(Reverse-Bias Voltage/Built-In Voltage))^Grading Coefficient

Transition Frequency of BJT

Go Transition Frequency = Transconductance/(2*pi*(Emitter-Base Capacitance+Collector-Base Junction Capacitance))

Concentration of Electrons Injected from Emitter to Base

Go Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage)

Unity-Gain Bandwidth of BJT

Go Unity-Gain Bandwidth = Transconductance/(Emitter-Base Capacitance+Collector-Base Junction Capacitance)

Small-Signal Diffusion Capacitance of BJT

Go Emitter-Base Capacitance = Device Constant*(Collector Current/Threshold Voltage)

Thermal Equilibrium Concentration of Minority Charge Carrier

Go Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base

Small-Signal Diffusion Capacitance

Go Emitter-Base Capacitance = Device Constant*Transconductance

Stored Electron Charge in Base of BJT

Go Stored Electron Charge = Device Constant*Collector Current

Transition Frequency of BJT given Device Constant

Go Transition Frequency = 1/(2*pi*Device Constant)

Base-Emitter Junction Capacitance

Go Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance

Base-Emitter Junction Capacitance Formula

Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance
C = 2*C_eb

What is BJT and its types?

A bipolar transistor (bipolar junction transistor: BJT) consists of three semiconductor regions forming two junctions. There are two types of structure: NPN and PNP. Products with NPN up to 800 V and PNP up to -600 V are available. In addition, there are also bias resistor built-in transistors (BRTs).

How to Calculate Base-Emitter Junction Capacitance?

Base-Emitter Junction Capacitance calculator uses Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance to calculate the Base–Emitter Junction Capacitance, The Base-emitter junction capacitance formula is defined as the depletion layer capacitance in the emitter-base junction which is a forward-biased junction. Base–Emitter Junction Capacitance is denoted by C symbol.

How to calculate Base-Emitter Junction Capacitance using this online calculator? To use this online calculator for Base-Emitter Junction Capacitance, enter Emitter-Base Capacitance (C_eb) and hit the calculate button. Here is how the Base-Emitter Junction Capacitance calculation can be explained with given input values -> 3E+6 = 2*1.5E-06.

FAQ

What is Base-Emitter Junction Capacitance?

The Base-emitter junction capacitance formula is defined as the depletion layer capacitance in the emitter-base junction which is a forward-biased junction and is represented as C = 2*C_eb or Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance. Emitter-base capacitance is the capacitance between the emitter and the base.

How to calculate Base-Emitter Junction Capacitance?

The Base-emitter junction capacitance formula is defined as the depletion layer capacitance in the emitter-base junction which is a forward-biased junction is calculated using Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance. To calculate Base-Emitter Junction Capacitance, you need Emitter-Base Capacitance (C_eb). With our tool, you need to enter the respective value for Emitter-Base Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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