Temperature Effect on Dark Current Calculator

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✖Dark current is the electric current that flows through a photosensitive device, such as a photodetector, even when there is no incident light or photons striking the device.ⓘ Dark Current [I_d]			+10% -10%
✖Changed Temperature is a physical quantity that quantitatively expresses the attribute of hotness or coldness.ⓘ Changed Temperature [T₂]			+10% -10%
✖Previous Temperature is a physical quantity that quantitatively expresses the attribute of hotness or coldness.ⓘ Previous Temperature [T₁]			+10% -10%

✖Dark Current in raised temperature is the relatively small electric current that flows through photosensitive devices when no photons enter the device.ⓘ Temperature Effect on Dark Current [I_da]

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Formula

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Temperature Effect on Dark Current

Formula

`"I"_{"da"} = "I"_{"d"}*2^(("T"_{"2"}-"T"_{"1"})/10)`

Example

`"22nA"="11nA"*2^(("50°C"-"40°C")/10)`

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Temperature Effect on Dark Current Solution

STEP 0: Pre-Calculation Summary

Formula Used

Dark Current in raised temperature = Dark Current*2^((Changed Temperature-Previous Temperature)/10)
I_da = I_d*2^((T₂-T₁)/10)
This formula uses 4 Variables

Variables Used

Dark Current in raised temperature - (Measured in Ampere) - Dark Current in raised temperature is the relatively small electric current that flows through photosensitive devices when no photons enter the device.
Dark Current - (Measured in Ampere) - Dark current is the electric current that flows through a photosensitive device, such as a photodetector, even when there is no incident light or photons striking the device.
Changed Temperature - (Measured in Kelvin) - Changed Temperature is a physical quantity that quantitatively expresses the attribute of hotness or coldness.
Previous Temperature - (Measured in Kelvin) - Previous Temperature is a physical quantity that quantitatively expresses the attribute of hotness or coldness.

STEP 1: Convert Input(s) to Base Unit

Dark Current: 11 Nanoampere --> 1.1E-08 Ampere (Check conversion here)
Changed Temperature: 50 Celsius --> 323.15 Kelvin (Check conversion here)
Previous Temperature: 40 Celsius --> 313.15 Kelvin (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_da = I_d*2^((T₂-T₁)/10) --> 1.1E-08*2^((323.15-313.15)/10)

Evaluating ... ...

I_da = 2.2E-08

STEP 3: Convert Result to Output's Unit

2.2E-08 Ampere -->22 Nanoampere (Check conversion here)

FINAL ANSWER

22 Nanoampere <-- Dark Current in raised temperature

(Calculation completed in 00.004 seconds)

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Credits

Created by Vaidehi Singh

Prabhat Engineering College (P.E.C.), Uttar Pradesh

Vaidehi Singh has created this Calculator and 25+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

Santhosh Yadav has verified this Calculator and 50+ more calculators!

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SNR of Good Avalanche Photodiode ADP Receiver in decibels

Go Signal to Noise Ratio = 10*log10((Multiplication Factor^2*Photocurrent^2)/(2*[Charge-e]*Post Detection Bandwidth*(Photocurrent+Dark Current)*Multiplication Factor^2.3+((4*[BoltZ]*Temperature*Post Detection Bandwidth*1.26)/Load Resistance)))

Photocurrent due to Incident Light

Go Photocurrent = (Incident Power*[Charge-e]*(1-Reflection Coefficient))/([hP]*Frequency Of Incident Light)*(1-exp(-Absorption Coefficient*Width of Absorption Region))

Probability of Detecting Photons

Go Probability of Finding a Photon = ((Variance of Probability Distribution Function^(Number of Incident Photons))*exp(-Variance of Probability Distribution Function))/(Number of Incident Photons!)

Excess Avalanche Noise Factor

Go Excess Avalanche Noise Factor = Multiplication Factor*(1+((1-Impact Ionization Coefficient)/Impact Ionization Coefficient)*((Multiplication Factor-1)/Multiplication Factor)^2)

Total Photodiode Current

Go Output Current = Dark Current*(exp(([Charge-e]*Photodiode Voltage)/(2*[BoltZ]*Temperature))-1)+Photocurrent

Optical Gain of Phototransistors

Go Optical Gain of Phototransistor = (([hP]*[c])/(Wavelength of Light*[Charge-e]))*(Collector Current of Phototransistor/Incident Power)

Average Number of Photons Detected

Go Average Number Of Photons Detected = (Quantum Efficiency*Average Received Optical Power*Time Period)/(Frequency Of Incident Light*[hP])

Single Pass Phase Shift through Fabry-Perot Amplifier

Go Single-Pass Phase Shift = (pi*(Frequency Of Incident Light-Fabry–Perot Resonant Frequency))/Free Spectral Range of Fabry-Pérot Interferometer

Total Root Mean Square Noise Current

Go Total Root Mean Square Noise Current = sqrt(Total Shot Noise^2+Dark Current Noise^2+Thermal Noise Current^2)

Average Received Optical Power

Go Average Received Optical Power = (20.7*[hP]*Frequency Of Incident Light)/(Time Period*Quantum Efficiency)

Total Power Accepted by Fiber

Go Total Power Accepted by Fiber = Incident Power*(1-(8*Axial Displacement)/(3*pi*Radius of Core))

Multiplied Photocurrent

Go Multiplied Photocurrent = Optical Gain of Phototransistor*Responsivity of Photodetector*Incident Power

Temperature Effect on Dark Current

Go Dark Current in raised temperature = Dark Current*2^((Changed Temperature-Previous Temperature)/10)

Incident Photon Rate

Go Incident Photon Rate = Incident Optical Power/([hP]*Frequency Of Light Wave)

Maximum Photodiode 3 dB Bandwidth

Go Maximum 3db Bandwidth = Carrier Velocity/(2*pi*Depletion Layer Width)

Maximum 3dB Bandwidth of Metal Photodetector

Go Maximum 3db Bandwidth = 1/(2*pi*Transit Time*PhotoConductive Gain)

Bandwidth Penalty

Go Post Detection Bandwidth = 1/(2*pi*Load Resistance*Capacitance)

Long Wavelength Cutoff Point

Go Wavelength Cutoff Point = [hP]*[c]/Bandgap Energy

Quantum Efficiency of Photodetector

Go Quantum Efficiency = Number of Electrons/Number of Incident Photons

Multiplication Factor

Go Multiplication Factor = Output Current/Initial Photocurrent

Electron Rate in Detector

Go Electron Rate = Quantum Efficiency*Incident Photon Rate

Transit Time with respect to Minority Carrier Diffusion

Go Diffusion Time = Distance^2/(2*Diffusion Coefficient)

Longest Transit Time

Go Transit Time = Depletion Layer Width/Drift Velocity

3 dB Bandwidth of Metal Photodetectors

Go Maximum 3db Bandwidth = 1/(2*pi*Transit Time)

Detectivity of Photodetector

Go Detectivity = 1/Noise Equivalent Power

Temperature Effect on Dark Current Formula

Dark Current in raised temperature = Dark Current*2^((Changed Temperature-Previous Temperature)/10)
I_da = I_d*2^((T₂-T₁)/10)

How temperature effects the dark current?

Temperature has a significant effect on dark current. Dark current is due to the thermal excitation of electrons into the conduction band and collection in the CCD wells. The generation of dark electrons is a thermally activated process and as such strongly temperature dependent. The rate of thermal processes depends not only on the active area but also critically on the temperature and the band gap energy of the material.

How to Calculate Temperature Effect on Dark Current?

Temperature Effect on Dark Current calculator uses Dark Current in raised temperature = Dark Current*2^((Changed Temperature-Previous Temperature)/10) to calculate the Dark Current in raised temperature, The temperature effect on dark current is often referred to as thermal excitation. This is because the dark current in photodetectors, such as photodiodes, is often caused by the thermal excitation of carriers. This process depends critically on the temperature and can increase the dark current. Dark Current in raised temperature is denoted by I_da symbol.

How to calculate Temperature Effect on Dark Current using this online calculator? To use this online calculator for Temperature Effect on Dark Current, enter Dark Current (I_d), Changed Temperature (T₂) & Previous Temperature (T₁) and hit the calculate button. Here is how the Temperature Effect on Dark Current calculation can be explained with given input values -> 2.2E+10 = 1.1E-08*2^((323.15-313.15)/10).

FAQ

What is Temperature Effect on Dark Current?

The temperature effect on dark current is often referred to as thermal excitation. This is because the dark current in photodetectors, such as photodiodes, is often caused by the thermal excitation of carriers. This process depends critically on the temperature and can increase the dark current and is represented as I_da = I_d*2^((T₂-T₁)/10) or Dark Current in raised temperature = Dark Current*2^((Changed Temperature-Previous Temperature)/10). Dark current is the electric current that flows through a photosensitive device, such as a photodetector, even when there is no incident light or photons striking the device, Changed Temperature is a physical quantity that quantitatively expresses the attribute of hotness or coldness & Previous Temperature is a physical quantity that quantitatively expresses the attribute of hotness or coldness.

How to calculate Temperature Effect on Dark Current?

The temperature effect on dark current is often referred to as thermal excitation. This is because the dark current in photodetectors, such as photodiodes, is often caused by the thermal excitation of carriers. This process depends critically on the temperature and can increase the dark current is calculated using Dark Current in raised temperature = Dark Current*2^((Changed Temperature-Previous Temperature)/10). To calculate Temperature Effect on Dark Current, you need Dark Current (I_d), Changed Temperature (T₂) & Previous Temperature (T₁). With our tool, you need to enter the respective value for Dark Current, Changed Temperature & Previous Temperature and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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