Total Power Dissipated in BJT Solution

STEP 0: Pre-Calculation Summary
Formula Used
Power = Collector-Emitter Voltage*Collector Current+Base-Emitter Voltage*Base Current
P = VCE*Ic+VBE*IB
This formula uses 5 Variables
Variables Used
Power - (Measured in Watt) - Power is the amount of energy liberated per second in a device.
Collector-Emitter Voltage - (Measured in Volt) - Collector-Emitter Voltage is the electric potential between the base and collector region of a transistor.
Collector Current - (Measured in Ampere) - Collector current is an amplified output current of a bipolar junction transistor.
Base-Emitter Voltage - (Measured in Volt) - Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor.
Base Current - (Measured in Ampere) - Base Current is a crucial current of bipolar junction transistor. Without the base current, the transistor cannot turn on.
STEP 1: Convert Input(s) to Base Unit
Collector-Emitter Voltage: 3.15 Volt --> 3.15 Volt No Conversion Required
Collector Current: 5 Milliampere --> 0.005 Ampere (Check conversion here)
Base-Emitter Voltage: 5.15 Volt --> 5.15 Volt No Conversion Required
Base Current: 0.077 Milliampere --> 7.7E-05 Ampere (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
P = VCE*Ic+VBE*IB --> 3.15*0.005+5.15*7.7E-05
Evaluating ... ...
P = 0.01614655
STEP 3: Convert Result to Output's Unit
0.01614655 Watt -->16.14655 Milliwatt (Check conversion here)
FINAL ANSWER
16.14655 Milliwatt <-- Power
(Calculation completed in 00.004 seconds)

Credits

Created by Payal Priya
Birsa Institute of Technology (BIT), Sindri
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National Institute Of Technology (NIT), Hamirpur
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16 Amplification Factor/Gain Calculators

Amplification Factor of BJT
Go BJT Amplification Factor = (Collector Current/Threshold Voltage)*((Positive DC Voltage+Collector-Emitter Voltage)/Collector Current)
Overall Voltage Gain of Amplifier when Load Resistance is Connected to Output
Go Voltage Gain = Common-Base Current Gain*(1/Collector Resistance+1/Load Resistance)^-1/(Signal Resistance+Emitter Resistance)
Overall Voltage Gain of Buffer Amplifier given Load Resistance
Go Voltage Gain = Load Resistance/(Load Resistance+Emitter Resistance+Signal Resistance/(Common Emitter Current Gain+1))
Overall Voltage Gain given Load Resistance of BJT
Go Voltage Gain = -Transconductance*((Collector Resistance*Load Resistance)/(Collector Resistance+Load Resistance))
Common Mode Gain of BJT
Go Common Mode Gain = -(Collector Resistance/(2*Output Resistance))*(Change in Collector Resistance/Collector Resistance)
Total Power Dissipated in BJT
Go Power = Collector-Emitter Voltage*Collector Current+Base-Emitter Voltage*Base Current
Voltage Gain given all Voltages
Go Voltage Gain = -(Supply Voltage-Collector-Emitter Voltage)/Thermal Voltage
Voltage Gain given Collector Current
Go Voltage Gain = -(Collector Current/Thermal Voltage)*Collector Resistance
Total Power Supplied in BJT
Go Power = Supply Voltage*(Collector Current+Input Current)
Common-Base Current Gain
Go Common-Base Current Gain = Common Emitter Current Gain/(Common Emitter Current Gain+1)
Common-Emitter Current Gain using Common-Base Current Gain
Go Common Emitter Current Gain = Common-Base Current Gain/(1-Common-Base Current Gain)
Open Circuit Voltage Gain given Open Circuit Transresistance
Go Open Circuit Voltage Gain = Open Circuit Transresistance/Input Resistance
Forced Common-Emitter Current Gain
Go Forced Common-Emitter Current Gain = Collector Current/Base Current
Voltage Gain given Transconductance and Collector Resistance
Go Voltage Gain = -Transconductance*Collector Resistance
Intrinsic Gain of BJT
Go Intrinsic Gain = Early Voltage/Thermal Voltage
Short-Circuit Current Gain
Go Current Gain = Output Current/Input Current

20 BJT Circuit Calculators

Transition Frequency of BJT
Go Transition Frequency = Transconductance/(2*pi*(Emitter-Base Capacitance+Collector-Base Junction Capacitance))
Base Current of PNP Transistor using Saturation Current
Go Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage)
Total Power Dissipated in BJT
Go Power = Collector-Emitter Voltage*Collector Current+Base-Emitter Voltage*Base Current
Unity-Gain Bandwidth of BJT
Go Unity-Gain Bandwidth = Transconductance/(Emitter-Base Capacitance+Collector-Base Junction Capacitance)
Reference Current of BJT Mirror
Go Reference Current = Collector Current+(2*Collector Current)/Common Emitter Current Gain
Common Mode Rejection Ratio
Go Common Mode Rejection Ratio = 20*log10(Differential Mode Gain/Common Mode Gain)
Output Resistance of BJT
Go Resistance = (Supply Voltage+Collector-Emitter Voltage)/Collector Current
Thermal Equilibrium Concentration of Minority Charge Carrier
Go Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base
Output Voltage of BJT Amplifier
Go Output Voltage = Supply Voltage-Drain Current*Load Resistance
Total Power Supplied in BJT
Go Power = Supply Voltage*(Collector Current+Input Current)
Common-Base Current Gain
Go Common-Base Current Gain = Common Emitter Current Gain/(Common Emitter Current Gain+1)
Collector to Emitter Voltage at Saturation
Go Collector-Emitter Voltage = Base-Emitter Voltage-Base-Collector Voltage
Base Current of PNP Transistor given Emitter Current
Go Base Current = Emitter Current/(Common Emitter Current Gain+1)
Base Current of PNP Transistor using Collector Current
Go Base Current = Collector Current/Common Emitter Current Gain
Collector Current using Emitter Current
Go Collector Current = Common-Base Current Gain*Emitter Current
Base Current of PNP Transistor using Common-Base Current Gain
Go Base Current = (1-Common-Base Current Gain)*Emitter Current
Collector Current of BJT
Go Collector Current = Emitter Current-Base Current
Emitter Current of BJT
Go Emitter Current = Collector Current+Base Current
Short-Circuit Transconductance
Go Transconductance = Output Current/Input Voltage
Intrinsic Gain of BJT
Go Intrinsic Gain = Early Voltage/Thermal Voltage

Total Power Dissipated in BJT Formula

Power = Collector-Emitter Voltage*Collector Current+Base-Emitter Voltage*Base Current
P = VCE*Ic+VBE*IB

What is power dissipated?

The definition of power dissipation is the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action. Such as the case with central processing units, power dissipation is a principal concern in computer architecture. Furthermore, power dissipation in resistors is considered a naturally occurring phenomenon. The fact remains that all resistors that are part of a circuit and have a voltage drop across them will dissipate electrical power. Moreover, this electrical power converts into heat energy, and therefore all resistors have a (power) rating. Also, a resistor’s power rating is a classification that parameterizes the maximum power that it can dissipate before it reaches critical failure.

How to Calculate Total Power Dissipated in BJT?

Total Power Dissipated in BJT calculator uses Power = Collector-Emitter Voltage*Collector Current+Base-Emitter Voltage*Base Current to calculate the Power, The total power dissipated in BJT is equal to the product of collector current and collector-emitter voltage. It is the sum of the power dissipation in its various components, including the base-emitter junction, the collector-emitter junction, and the internal resistances of the transistor. Power is denoted by P symbol.

How to calculate Total Power Dissipated in BJT using this online calculator? To use this online calculator for Total Power Dissipated in BJT, enter Collector-Emitter Voltage (VCE), Collector Current (Ic), Base-Emitter Voltage (VBE) & Base Current (IB) and hit the calculate button. Here is how the Total Power Dissipated in BJT calculation can be explained with given input values -> 16146.55 = 3.15*0.005+5.15*7.7E-05.

FAQ

What is Total Power Dissipated in BJT?
The total power dissipated in BJT is equal to the product of collector current and collector-emitter voltage. It is the sum of the power dissipation in its various components, including the base-emitter junction, the collector-emitter junction, and the internal resistances of the transistor and is represented as P = VCE*Ic+VBE*IB or Power = Collector-Emitter Voltage*Collector Current+Base-Emitter Voltage*Base Current. Collector-Emitter Voltage is the electric potential between the base and collector region of a transistor, Collector current is an amplified output current of a bipolar junction transistor, Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor & Base Current is a crucial current of bipolar junction transistor. Without the base current, the transistor cannot turn on.
How to calculate Total Power Dissipated in BJT?
The total power dissipated in BJT is equal to the product of collector current and collector-emitter voltage. It is the sum of the power dissipation in its various components, including the base-emitter junction, the collector-emitter junction, and the internal resistances of the transistor is calculated using Power = Collector-Emitter Voltage*Collector Current+Base-Emitter Voltage*Base Current. To calculate Total Power Dissipated in BJT, you need Collector-Emitter Voltage (VCE), Collector Current (Ic), Base-Emitter Voltage (VBE) & Base Current (IB). With our tool, you need to enter the respective value for Collector-Emitter Voltage, Collector Current, Base-Emitter Voltage & Base Current and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Power?
In this formula, Power uses Collector-Emitter Voltage, Collector Current, Base-Emitter Voltage & Base Current. We can use 2 other way(s) to calculate the same, which is/are as follows -
  • Power = Supply Voltage*(Collector Current+Input Current)
  • Power = Supply Voltage*(Collector Current+Input Current)
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