Transconductance in Saturation Region Calculator

✖The Output Conductance represents the small-signal drain-source conductance of the MOSFET when the gate-source voltage is held constant.ⓘ Output Conductance [G_o]			+10% -10%
✖Schottky Diode Potential Barrier is the energy barrier that exists at the interface between a metal and a semiconductor material in a Schottky diode.ⓘ Schottky Diode Potential Barrier [V_i]			+10% -10%
✖Gate Voltage refers to the voltage applied to the control terminal of a MESFET to regulate its conductance.The gate voltage determines the number of free charge carriers in the channel.ⓘ Gate Voltage [V_g]			+10% -10%
✖Pinch Off Voltage is the gate voltage at which the channel becomes completely pinched off, and is a key parameter in the operation of FETs. It is an important parameter in circuit design.ⓘ Pinch Off Voltage [V_p]			+10% -10%

✖Transconductance is defined as the ratio of the change in drain current to the change in gate-source voltage, assuming a constant drain-source voltage.ⓘ Transconductance in Saturation Region [g_m]

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Formula

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Transconductance in Saturation Region

Formula

`"g"_{"m"} = "G"_{"o"}*(1-sqrt(("V"_{"i"}-"V"_{"g"})/"V"_{"p"}))`

Example

`"0.050963S"="0.174S"*(1-sqrt(("15.9V"-"9.62V")/"12.56V"))`

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Download MESFET Characteristics Formulas PDF

Transconductance in Saturation Region Solution

STEP 0: Pre-Calculation Summary

Formula Used

Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage))
g_m = G_o*(1-sqrt((V_i-V_g)/V_p))
This formula uses 1 Functions, 5 Variables

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Transconductance - (Measured in Siemens) - Transconductance is defined as the ratio of the change in drain current to the change in gate-source voltage, assuming a constant drain-source voltage.
Output Conductance - (Measured in Siemens) - The Output Conductance represents the small-signal drain-source conductance of the MOSFET when the gate-source voltage is held constant.
Schottky Diode Potential Barrier - (Measured in Volt) - Schottky Diode Potential Barrier is the energy barrier that exists at the interface between a metal and a semiconductor material in a Schottky diode.
Gate Voltage - (Measured in Volt) - Gate Voltage refers to the voltage applied to the control terminal of a MESFET to regulate its conductance.The gate voltage determines the number of free charge carriers in the channel.
Pinch Off Voltage - (Measured in Volt) - Pinch Off Voltage is the gate voltage at which the channel becomes completely pinched off, and is a key parameter in the operation of FETs. It is an important parameter in circuit design.

STEP 1: Convert Input(s) to Base Unit

Output Conductance: 0.174 Siemens --> 0.174 Siemens No Conversion Required
Schottky Diode Potential Barrier: 15.9 Volt --> 15.9 Volt No Conversion Required
Gate Voltage: 9.62 Volt --> 9.62 Volt No Conversion Required
Pinch Off Voltage: 12.56 Volt --> 12.56 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

g_m = G_o*(1-sqrt((V_i-V_g)/V_p)) --> 0.174*(1-sqrt((15.9-9.62)/12.56))

Evaluating ... ...

g_m = 0.0509634200735407

STEP 3: Convert Result to Output's Unit

0.0509634200735407 Siemens --> No Conversion Required

FINAL ANSWER

0.0509634200735407 ≈ 0.050963 Siemens <-- Transconductance

(Calculation completed in 00.004 seconds)

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Created by Sonu Kumar Keshri

National Institute of Technology, Patna (NITP), Patna

Sonu Kumar Keshri has created this Calculator and 5 more calculators!

Verified by Parminder Singh

Chandigarh University (CU), Punjab

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< 13 MESFET Characteristics Calculators

Cut-off Frequency using Maximum Frequency

Go Cut-off Frequency = (2*Maximum Frequency of Oscillations)/(sqrt(Drain Resistance/(Source Resistance+Gate Metallization Resistance+Input Resistance)))

Gate Metallization Resistance

Go Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance)

Source Resistance

Go Source Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Gate Metallization Resistance+Input Resistance)

Input Resistance

Go Input Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Gate Metallization Resistance+Source Resistance)

Drain Resistance of MESFET

Go Drain Resistance = ((4*Maximum Frequency of Oscillations^2)/Cut-off Frequency^2)*(Source Resistance+Gate Metallization Resistance+Input Resistance)

Transconductance in Saturation Region

Go Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage))

Maximum Frequency of Oscillations in MESFET

Go Maximum Frequency of Oscillations = (Unity Gain Frequency/2)*sqrt(Drain Resistance/Gate Metallization Resistance)

Maximum Frequency of Oscillation given Transconductance

Go Maximum Frequency of Oscillations = Transconductance/(pi*Gate Source Capacitance)

Cut-off Frequency given Transconductance and Capacitance

Go Cut-off Frequency = Transconductance/(2*pi*Gate Source Capacitance)

Gate Source Capacitance

Go Gate Source Capacitance = Transconductance/(2*pi*Cut-off Frequency)

Transconductance in MESFET

Go Transconductance = 2*Gate Source Capacitance*pi*Cut-off Frequency

Cut-off Frequency

Go Cut-off Frequency = Saturated Drift Velocity/(4*pi*Gate Length)

Gate Length of MESFET

Go Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency)

Transconductance in Saturation Region Formula

Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage))
g_m = G_o*(1-sqrt((V_i-V_g)/V_p))

What is transconductance?

Transconductance (gm) is a measure of the sensitivity of the output current of a device to changes in the input voltage. It is defined as the derivative of the output current with respect to the input voltage, and has units of siemens (S).

How to Calculate Transconductance in Saturation Region?

Transconductance in Saturation Region calculator uses Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage)) to calculate the Transconductance, The Transconductance in Saturation Region formula is defined as the ratio of the change in the drain current to the change in the gate voltage at a fixed drain voltage, while the device is operating in the saturation region. It is a measure of the device's ability to amplify small changes in the input voltage applied to the gate electrode. Transconductance is denoted by g_m symbol.

How to calculate Transconductance in Saturation Region using this online calculator? To use this online calculator for Transconductance in Saturation Region, enter Output Conductance (G_o), Schottky Diode Potential Barrier (V_i), Gate Voltage (V_g) & Pinch Off Voltage (V_p) and hit the calculate button. Here is how the Transconductance in Saturation Region calculation can be explained with given input values -> 0.050963 = 0.174*(1-sqrt((15.9-9.62)/12.56)).

FAQ

What is Transconductance in Saturation Region?

The Transconductance in Saturation Region formula is defined as the ratio of the change in the drain current to the change in the gate voltage at a fixed drain voltage, while the device is operating in the saturation region. It is a measure of the device's ability to amplify small changes in the input voltage applied to the gate electrode and is represented as g_m = G_o*(1-sqrt((V_i-V_g)/V_p)) or Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage)). The Output Conductance represents the small-signal drain-source conductance of the MOSFET when the gate-source voltage is held constant, Schottky Diode Potential Barrier is the energy barrier that exists at the interface between a metal and a semiconductor material in a Schottky diode, Gate Voltage refers to the voltage applied to the control terminal of a MESFET to regulate its conductance.The gate voltage determines the number of free charge carriers in the channel & Pinch Off Voltage is the gate voltage at which the channel becomes completely pinched off, and is a key parameter in the operation of FETs. It is an important parameter in circuit design.

How to calculate Transconductance in Saturation Region?

The Transconductance in Saturation Region formula is defined as the ratio of the change in the drain current to the change in the gate voltage at a fixed drain voltage, while the device is operating in the saturation region. It is a measure of the device's ability to amplify small changes in the input voltage applied to the gate electrode is calculated using Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage)). To calculate Transconductance in Saturation Region, you need Output Conductance (G_o), Schottky Diode Potential Barrier (V_i), Gate Voltage (V_g) & Pinch Off Voltage (V_p). With our tool, you need to enter the respective value for Output Conductance, Schottky Diode Potential Barrier, Gate Voltage & Pinch Off Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Transconductance?

In this formula, Transconductance uses Output Conductance, Schottky Diode Potential Barrier, Gate Voltage & Pinch Off Voltage. We can use 1 other way(s) to calculate the same, which is/are as follows -

Transconductance = 2*Gate Source Capacitance*pi*Cut-off Frequency

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