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Voltage across collector-emitter of BJT Amplifier Solution

STEP 0: Pre-Calculation Summary
Formula Used
voltage_across_collector_emitter = Supply Voltage-Load Resistance*Saturation current*e^(Voltage across the base–emitter junction/Threshold voltage)
VCE = Vcc-Rc*Is*e^(VBE/VT)
This formula uses 1 Constants, 5 Variables
Constants Used
e - Napier's constant Value Taken As 2.71828182845904523536028747135266249
Variables Used
Supply Voltage - Supply Voltage is the input voltage source that flows through the BJT (Measured in Volt)
Load Resistance - Load resistance is the cumulative resistance of a circuit, as seen by the voltage, current, or power source driving that circuit. (Measured in Ohm)
Saturation current - Saturation current is the diode leakage current density in the absence of light. It is an important parameter which differentiates one diode from another. (Measured in Ampere)
Voltage across the base–emitter junction - The voltage across the base–emitter junction is the forward voltage between the base and emitter of the transistor. (Measured in Volt)
Threshold voltage - Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency. (Measured in Volt)
STEP 1: Convert Input(s) to Base Unit
Supply Voltage: 15 Volt --> 15 Volt No Conversion Required
Load Resistance: 950 Ohm --> 950 Ohm No Conversion Required
Saturation current: 0.01 Ampere --> 0.01 Ampere No Conversion Required
Voltage across the base–emitter junction: 5 Volt --> 5 Volt No Conversion Required
Threshold voltage: 50 Volt --> 50 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
VCE = Vcc-Rc*Is*e^(VBE/VT) --> 15-950*0.01*e^(5/50)
Evaluating ... ...
VCE = 4.50087627828135
STEP 3: Convert Result to Output's Unit
4.50087627828135 Volt --> No Conversion Required
FINAL ANSWER
4.50087627828135 Volt <-- Voltage across collector-emitter
(Calculation completed in 00.016 seconds)

10+ Basic Principles Calculators

Voltage across gas oxide when MOSFET acts as an amplifier
voltage_across_the_oxide = Threshold voltage+((sqrt(2*MOSFET transconductance parameter*Load Resistance*Supply Voltage+1)-1))/MOSFET transconductance parameter*Load Resistance Go
Voltage across collector-emitter when MOSFET acts as an amplifier
voltage_across_collector_emitter = Supply Voltage-Load Resistance*Saturation current*e^(Voltage across the base–emitter junction/Threshold voltage) Go
Output voltage when MOSFET acts as an amplifier
output_voltage = Supply Voltage-1/2*MOSFET transconductance parameter*Load Resistance*(Voltage across the oxide-Threshold voltage)^2 Go
Output voltage when the transistor is biased
output_voltage = Supply Voltage-1/2*MOSFET transconductance parameter*Load Resistance*(Voltage across the oxide-Threshold voltage)^2 Go
Collector current in active region when transistor acts as an amplifier
collector_current = Saturation current*e^(Voltage across the base–emitter junction/Threshold voltage) Go
Drain current when transistor acts as an amplifier
drain_current = 1/2*MOSFET transconductance parameter*(Voltage across the oxide-Threshold voltage)^2 Go
Overdrive voltage when MOSFET acts as an amplifier
effective_voltage_or_overdrive_voltage = modulus(Voltage across the oxide)-Threshold voltage Go
Output Voltage of the voltage amplifier
output_voltage_of_amplifier = Supply Voltage-Drain current*Load Resistance Go
Output Voltage of BJT Amplifier
output_voltage = Supply Voltage-Drain current of BJT*Load Resistance Go
Bias voltage of the transistor
bias_voltage = Voltage across the oxide+Input voltage Go

Voltage across collector-emitter of BJT Amplifier Formula

voltage_across_collector_emitter = Supply Voltage-Load Resistance*Saturation current*e^(Voltage across the base–emitter junction/Threshold voltage)
VCE = Vcc-Rc*Is*e^(VBE/VT)

How BJT used as an amplifier?

When used as an amplifier, the biasing is arranged so that the transistor operates in the linear region. An amplifier will usually be biased to about half the supply voltage to allow for maximum output swing.

How to Calculate Voltage across collector-emitter of BJT Amplifier?

Voltage across collector-emitter of BJT Amplifier calculator uses voltage_across_collector_emitter = Supply Voltage-Load Resistance*Saturation current*e^(Voltage across the base–emitter junction/Threshold voltage) to calculate the Voltage across collector-emitter, The voltage across collector-emitter of BJT Amplifier VCEO, the spec states the maximum voltage that can be applied from the collector to emitter is 50 V. Voltage across collector-emitter and is denoted by VCE symbol.

How to calculate Voltage across collector-emitter of BJT Amplifier using this online calculator? To use this online calculator for Voltage across collector-emitter of BJT Amplifier, enter Supply Voltage (Vcc), Load Resistance (Rc), Saturation current (Is), Voltage across the base–emitter junction (VBE) and Threshold voltage (VT) and hit the calculate button. Here is how the Voltage across collector-emitter of BJT Amplifier calculation can be explained with given input values -> 4.500876 = 15-950*0.01*e^(5/50).

FAQ

What is Voltage across collector-emitter of BJT Amplifier?
The voltage across collector-emitter of BJT Amplifier VCEO, the spec states the maximum voltage that can be applied from the collector to emitter is 50 V and is represented as VCE = Vcc-Rc*Is*e^(VBE/VT) or voltage_across_collector_emitter = Supply Voltage-Load Resistance*Saturation current*e^(Voltage across the base–emitter junction/Threshold voltage). Supply Voltage is the input voltage source that flows through the BJT, Load resistance is the cumulative resistance of a circuit, as seen by the voltage, current, or power source driving that circuit, Saturation current is the diode leakage current density in the absence of light. It is an important parameter which differentiates one diode from another, The voltage across the base–emitter junction is the forward voltage between the base and emitter of the transistor and Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency.
How to calculate Voltage across collector-emitter of BJT Amplifier?
The voltage across collector-emitter of BJT Amplifier VCEO, the spec states the maximum voltage that can be applied from the collector to emitter is 50 V is calculated using voltage_across_collector_emitter = Supply Voltage-Load Resistance*Saturation current*e^(Voltage across the base–emitter junction/Threshold voltage). To calculate Voltage across collector-emitter of BJT Amplifier, you need Supply Voltage (Vcc), Load Resistance (Rc), Saturation current (Is), Voltage across the base–emitter junction (VBE) and Threshold voltage (VT). With our tool, you need to enter the respective value for Supply Voltage, Load Resistance, Saturation current, Voltage across the base–emitter junction and Threshold voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Voltage across collector-emitter?
In this formula, Voltage across collector-emitter uses Supply Voltage, Load Resistance, Saturation current, Voltage across the base–emitter junction and Threshold voltage. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • collector_current = Saturation current*e^(Voltage across the base–emitter junction/Threshold voltage)
  • output_voltage_of_amplifier = Supply Voltage-Drain current*Load Resistance
  • output_voltage = Supply Voltage-Drain current of BJT*Load Resistance
  • drain_current = 1/2*MOSFET transconductance parameter*(Voltage across the oxide-Threshold voltage)^2
  • output_voltage = Supply Voltage-1/2*MOSFET transconductance parameter*Load Resistance*(Voltage across the oxide-Threshold voltage)^2
  • voltage_across_the_oxide = Threshold voltage+((sqrt(2*MOSFET transconductance parameter*Load Resistance*Supply Voltage+1)-1))/MOSFET transconductance parameter*Load Resistance
  • effective_voltage_or_overdrive_voltage = modulus(Voltage across the oxide)-Threshold voltage
  • voltage_across_collector_emitter = Supply Voltage-Load Resistance*Saturation current*e^(Voltage across the base–emitter junction/Threshold voltage)
  • output_voltage = Supply Voltage-1/2*MOSFET transconductance parameter*Load Resistance*(Voltage across the oxide-Threshold voltage)^2
  • bias_voltage = Voltage across the oxide+Input voltage
Where is the Voltage across collector-emitter of BJT Amplifier calculator used?
Among many, Voltage across collector-emitter of BJT Amplifier calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
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