Average Power Dissipation CMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
Average Power Dissipation = Load Capacitance*(Supply Voltage)^2*Frequency
Pavg = Cload*(VDD)^2*f
This formula uses 4 Variables
Variables Used
Average Power Dissipation - (Measured in Volt) - Average Power Dissipation in CMOS inverter is defined as the power required to charge up and charge down the output load capacitance.
Load Capacitance - (Measured in Farad) - Load Capacitance of Inverter CMOS is defined as combined capacitances into an equivalent lumped linear capacitance.
Supply Voltage - (Measured in Volt) - Supply Voltage of CMOS is defined as the supply voltage given to the source terminal of the PMOS.
Frequency - (Measured in Hertz) - Frequency represents the number of cycles or oscillations of a waveform that occur in one second.
STEP 1: Convert Input(s) to Base Unit
Load Capacitance: 0.85 Femtofarad --> 8.5E-16 Farad (Check conversion ​here)
Supply Voltage: 3.3 Volt --> 3.3 Volt No Conversion Required
Frequency: 39.9 Gigahertz --> 39900000000 Hertz (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Pavg = Cload*(VDD)^2*f --> 8.5E-16*(3.3)^2*39900000000
Evaluating ... ...
Pavg = 0.00036933435
STEP 3: Convert Result to Output's Unit
0.00036933435 Volt -->0.36933435 Millivolt (Check conversion ​here)
FINAL ANSWER
0.36933435 0.369334 Millivolt <-- Average Power Dissipation
(Calculation completed in 00.020 seconds)

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Created by Priyanka Patel
Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad
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17 CMOS Inverters Calculators

Propagation Delay for Low to High Output Transition CMOS
​ Go Time for Low to High Transition of Output = (Load Capacitance/(Transconductance of PMOS*(Supply Voltage-abs(Threshold Voltage of PMOS with Body Bias))))*(((2*abs(Threshold Voltage of PMOS with Body Bias))/(Supply Voltage-abs(Threshold Voltage of PMOS with Body Bias)))+ln((4*(Supply Voltage-abs(Threshold Voltage of PMOS with Body Bias))/Supply Voltage)-1))
Propagation Delay for High to Low Output Transition CMOS
​ Go Time for High to Low Transition of Output = (Load Capacitance/(Transconductance of NMOS*(Supply Voltage-Threshold Voltage of NMOS with Body Bias)))*((2*Threshold Voltage of NMOS with Body Bias/(Supply Voltage-Threshold Voltage of NMOS with Body Bias))+ln((4*(Supply Voltage-Threshold Voltage of NMOS with Body Bias)/Supply Voltage)-1))
Resistive Load Minimum Output Voltage CMOS
​ Go Resistive Load Minimum Output Voltage = Supply Voltage-Zero Bias Threshold Voltage+(1/(Transconductance of NMOS*Load Resistance))-sqrt((Supply Voltage-Zero Bias Threshold Voltage+(1/(Transconductance of NMOS*Load Resistance)))^2-(2*Supply Voltage/(Transconductance of NMOS*Load Resistance)))
Threshold Voltage CMOS
​ Go Threshold Voltage = (Threshold Voltage of NMOS Without Body Bias+sqrt(1/Transconductance Ratio)*(Supply Voltage+(Threshold Voltage of PMOS Without Body Bias)))/(1+sqrt(1/Transconductance Ratio))
Maximum Input Voltage CMOS
​ Go Maximum Input Voltage CMOS = (2*Output Voltage for Max Input+(Threshold Voltage of PMOS Without Body Bias)-Supply Voltage+Transconductance Ratio*Threshold Voltage of NMOS Without Body Bias)/(1+Transconductance Ratio)
Resistive Load Minimum Input Voltage CMOS
​ Go Resistive Load Minimum Input Voltage = Zero Bias Threshold Voltage+sqrt((8*Supply Voltage)/(3*Transconductance of NMOS*Load Resistance))-(1/(Transconductance of NMOS*Load Resistance))
Minimum Input Voltage CMOS
​ Go Minimum Input Voltage = (Supply Voltage+(Threshold Voltage of PMOS Without Body Bias)+Transconductance Ratio*(2*Output Voltage+Threshold Voltage of NMOS Without Body Bias))/(1+Transconductance Ratio)
Load Capacitance of Cascaded Inverter CMOS
​ Go Load Capacitance = Gate Drain Capacitance of PMOS+Gate Drain Capacitance of NMOS+Drain Bulk Capacitance of PMOS+Drain Bulk Capacitance of NMOS+Internal Capacitance+Gate Capacitance
Energy Delivered by Power Supply
​ Go Energy Delivered by Power Supply = int(Supply Voltage*Instantaneous Drain Current*x,x,0,Charging Interval of Capacitor)
Resistive Load Maximum Input Voltage CMOS
​ Go Resistive Load Maximum Input Voltage CMOS = Zero Bias Threshold Voltage+(1/(Transconductance of NMOS*Load Resistance))
Average Propagation Delay CMOS
​ Go Average Propagation Delay = (Time for High to Low Transition of Output+Time for Low to High Transition of Output)/2
Average Power Dissipation CMOS
​ Go Average Power Dissipation = Load Capacitance*(Supply Voltage)^2*Frequency
Maximum Input Voltage for Symmetric CMOS
​ Go Maximum Input Voltage = (3*Supply Voltage+2*Threshold Voltage of NMOS Without Body Bias)/8
Minimum Input Voltage for Symmetric CMOS
​ Go Minimum Input Voltage = (5*Supply Voltage-2*Threshold Voltage of NMOS Without Body Bias)/8
Oscillation Period Ring Oscillator CMOS
​ Go Oscillation Period = 2*Number of Stages Ring Oscillator*Average Propagation Delay
Noise Margin for High Signal CMOS
​ Go Noise Margin for High Signal = Maximum Output Voltage-Minimum Input Voltage
Transconductance Ratio CMOS
​ Go Transconductance Ratio = Transconductance of NMOS/Transconductance of PMOS

Average Power Dissipation CMOS Formula

Average Power Dissipation = Load Capacitance*(Supply Voltage)^2*Frequency
Pavg = Cload*(VDD)^2*f

How does load capacitance (Cload) affect average power dissipation in a CMOS circuit?

The load capacitance influences the dynamic power dissipation in a CMOS circuit. Higher load capacitance increases the charging and discharging times, leading to increased dynamic power consumption.

How to Calculate Average Power Dissipation CMOS?

Average Power Dissipation CMOS calculator uses Average Power Dissipation = Load Capacitance*(Supply Voltage)^2*Frequency to calculate the Average Power Dissipation, The Average Power Dissipation CMOS formula is defined as the power required to charge up and charge down the output load capacitance. Average Power Dissipation is denoted by Pavg symbol.

How to calculate Average Power Dissipation CMOS using this online calculator? To use this online calculator for Average Power Dissipation CMOS, enter Load Capacitance (Cload), Supply Voltage (VDD) & Frequency (f) and hit the calculate button. Here is how the Average Power Dissipation CMOS calculation can be explained with given input values -> 369.3343 = 8.5E-16*(3.3)^2*39900000000.

FAQ

What is Average Power Dissipation CMOS?
The Average Power Dissipation CMOS formula is defined as the power required to charge up and charge down the output load capacitance and is represented as Pavg = Cload*(VDD)^2*f or Average Power Dissipation = Load Capacitance*(Supply Voltage)^2*Frequency. Load Capacitance of Inverter CMOS is defined as combined capacitances into an equivalent lumped linear capacitance, Supply Voltage of CMOS is defined as the supply voltage given to the source terminal of the PMOS & Frequency represents the number of cycles or oscillations of a waveform that occur in one second.
How to calculate Average Power Dissipation CMOS?
The Average Power Dissipation CMOS formula is defined as the power required to charge up and charge down the output load capacitance is calculated using Average Power Dissipation = Load Capacitance*(Supply Voltage)^2*Frequency. To calculate Average Power Dissipation CMOS, you need Load Capacitance (Cload), Supply Voltage (VDD) & Frequency (f). With our tool, you need to enter the respective value for Load Capacitance, Supply Voltage & Frequency and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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