Bit Capacitance Solution

STEP 0: Pre-Calculation Summary
Formula Used
Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance
Cbit = ((Vdd*Ccell)/(2*ΔV))-Ccell
This formula uses 4 Variables
Variables Used
Bit Capacitance - (Measured in Farad) - Bit Capacitance is one bit's Capacitance in cmos vlsi.
Positive Voltage - (Measured in Volt) - The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit.
Cell Capacitance - (Measured in Farad) - Cell Capacitance is the capacitance of individual cell.
Voltage Swing on Bitline - (Measured in Volt) - Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation.
STEP 1: Convert Input(s) to Base Unit
Positive Voltage: 2.58 Volt --> 2.58 Volt No Conversion Required
Cell Capacitance: 5.98 Picofarad --> 5.98E-12 Farad (Check conversion here)
Voltage Swing on Bitline: 0.42 Volt --> 0.42 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Cbit = ((Vdd*Ccell)/(2*ΔV))-Ccell --> ((2.58*5.98E-12)/(2*0.42))-5.98E-12
Evaluating ... ...
Cbit = 1.23871428571429E-11
STEP 3: Convert Result to Output's Unit
1.23871428571429E-11 Farad -->12.3871428571429 Picofarad (Check conversion here)
FINAL ANSWER
12.3871428571429 12.38714 Picofarad <-- Bit Capacitance
(Calculation completed in 00.004 seconds)

Credits

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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19 Array Datapath Subsystem Calculators

Carry-Looker Adder Delay
Go Carry-Looker Adder Delay = Propagation Delay+Group Propagation Delay+((N-Input AND Gate-1)+(K-Input AND Gate-1))*AND-OR Gate Delay+XOR Delay
Multiplexer Delay
Go Multiplexer Delay = (Carry-Skip Adder Delay-(Propagation Delay+(2*(N-Input AND Gate-1)*AND-OR Gate Delay)-XOR Delay))/(K-Input AND Gate-1)
Carry-Skip Adder Delay
Go Carry-Skip Adder Delay = Propagation Delay+2*(N-Input AND Gate-1)*AND-OR Gate Delay+(K-Input AND Gate-1)*Multiplexer Delay+XOR Delay
Carry-Increamentor Adder Delay
Go Carry-Incrementor Adder Delay = Propagation Delay+Group Propagation Delay+(K-Input AND Gate-1)*AND-OR Gate Delay+XOR Delay
Critical Delay in Gates
Go Critical Delay in Gates = Propagation Delay+(N-Input AND Gate+(K-Input AND Gate-2))*AND-OR Gate Delay+Multiplexer Delay
Group Propagation Delay
Go Propagation Delay = Tree Adder Delay-(log2(Absolute Frequency)*AND-OR Gate Delay+XOR Delay)
Tree Adder Delay
Go Tree Adder Delay = Propagation Delay+log2(Absolute Frequency)*AND-OR Gate Delay+XOR Delay
Cell Capacitance
Go Cell Capacitance = (Bit Capacitance*2*Voltage Swing on Bitline)/(Positive Voltage-(Voltage Swing on Bitline*2))
Bit Capacitance
Go Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance
Voltage Swing On Bitline
Go Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance)
Ground Capacitance
Go Ground Capacitance = ((Agressor Voltage*Adjacent Capacitance)/Victim Voltage)-Adjacent Capacitance
'XOR' Delay
Go XOR Delay = Ripple Time-(Propagation Delay+(Gates on Critical Path-1)*AND-OR Gate Delay)
Carry-Ripple Adder Critical Path Delay
Go Ripple Time = Propagation Delay+(Gates on Critical Path-1)*AND-OR Gate Delay+XOR Delay
Area of Memory Containing N Bits
Go Area of Memory Cell = (Area of One Bit Memory Cell*Absolute Frequency)/Array Efficiency
Area of Memory Cell
Go Area of One Bit Memory Cell = (Array Efficiency*Area of Memory Cell)/Absolute Frequency
Array Efficiency
Go Array Efficiency = (Area of One Bit Memory Cell*Absolute Frequency)/Area of Memory Cell
N-Input 'And' Gate
Go N-Input AND Gate = N-bit Carry Skip Adder/K-Input AND Gate
N-Bit Carry-Skip Adder
Go N-bit Carry Skip Adder = N-Input AND Gate*K-Input AND Gate
K-Input 'And' Gate
Go K-Input AND Gate = N-bit Carry Skip Adder/N-Input AND Gate

Bit Capacitance Formula

Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance
Cbit = ((Vdd*Ccell)/(2*ΔV))-Ccell

How does various capacitances vary in dynamic RAM or DRAM?

The DRAM capacitor Cell must be as physically small as possible to achieve good density. However, the bit line is contacted to many DRAM cells and has a relatively large capacitance C bit. Therefore, the cell capacitance is typically much smaller than the bit line capacitance. A large cell capacitance is important to provide a reasonable voltage swing. It also is necessary to retain the contents of the cell for an acceptably long time and to minimize soft errors.

How to Calculate Bit Capacitance?

Bit Capacitance calculator uses Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance to calculate the Bit Capacitance, The Bit Capacitance formula is represented as CB. It is calculated as the capacitance of the bit line per unit length. Memory cells are etched onto a silicon wafer in an array of columns (bit lines) and rows (word lines). Bit Capacitance is denoted by Cbit symbol.

How to calculate Bit Capacitance using this online calculator? To use this online calculator for Bit Capacitance, enter Positive Voltage (Vdd), Cell Capacitance (Ccell) & Voltage Swing on Bitline (ΔV) and hit the calculate button. Here is how the Bit Capacitance calculation can be explained with given input values -> 1.2E+13 = ((2.58*5.98E-12)/(2*0.42))-5.98E-12 .

FAQ

What is Bit Capacitance?
The Bit Capacitance formula is represented as CB. It is calculated as the capacitance of the bit line per unit length. Memory cells are etched onto a silicon wafer in an array of columns (bit lines) and rows (word lines) and is represented as Cbit = ((Vdd*Ccell)/(2*ΔV))-Ccell or Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance. The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit, Cell Capacitance is the capacitance of individual cell & Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation.
How to calculate Bit Capacitance?
The Bit Capacitance formula is represented as CB. It is calculated as the capacitance of the bit line per unit length. Memory cells are etched onto a silicon wafer in an array of columns (bit lines) and rows (word lines) is calculated using Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance. To calculate Bit Capacitance, you need Positive Voltage (Vdd), Cell Capacitance (Ccell) & Voltage Swing on Bitline (ΔV). With our tool, you need to enter the respective value for Positive Voltage, Cell Capacitance & Voltage Swing on Bitline and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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