Built-in Potential Calculator

↳

Electronics

Chemical Engineering

Civil

Electrical

Electronics and Instrumentation

Materials Science

Mechanical

Production Engineering

⤿

CMOS Design Characteristics

Array Datapath Subsystem

CMOS Circuit Characteristics

CMOS Delay Characteristics

CMOS Inverters

CMOS Power Metrics

CMOS Special Purpose Subsystem

CMOS Time Characteristics

✖Thermal Voltage is the voltage produced within the p-n junction.ⓘ Thermal Voltage [V_t]			+10% -10%
✖Acceptor Concentration is the concentration of holes in acceptor state.ⓘ Acceptor Concentration [N_a]			+10% -10%
✖Donor concentration is the concentration of electrons in the donor state.ⓘ Donor Concentration [N_d]			+10% -10%
✖Intrinsic Electron Concentration is defined as the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.ⓘ Intrinsic Electron Concentration [n_i]			+10% -10%

✖Built-in Potential is potential inside the MOSFET.ⓘ Built-in Potential [ψ_o]

⎘ Copy

👎

Formula

✖

Built-in Potential

Formula

`"ψ"_{"o"} = "V"_{"t"}*ln(("N"_{"a"}*"N"_{"d"})/("n"_{"i"}^2))`

Example

`"18.81808V"="0.55V"*ln(("1100/m³"*"1.9e14/m³")/(("17")^2))`

Calculator

LaTeX

Reset

👍

Download CMOS Design Characteristics Formulas PDF

Built-in Potential Solution

STEP 0: Pre-Calculation Summary

Formula Used

Built-in Potential = Thermal Voltage*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2))
ψ_o = V_t*ln((N_a*N_d)/(n_i^2))
This formula uses 1 Functions, 5 Variables

Functions Used

ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)

Variables Used

Built-in Potential - (Measured in Volt) - Built-in Potential is potential inside the MOSFET.
Thermal Voltage - (Measured in Volt) - Thermal Voltage is the voltage produced within the p-n junction.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration is the concentration of holes in acceptor state.
Donor Concentration - (Measured in 1 per Cubic Meter) - Donor concentration is the concentration of electrons in the donor state.
Intrinsic Electron Concentration - Intrinsic Electron Concentration is defined as the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.

STEP 1: Convert Input(s) to Base Unit

Thermal Voltage: 0.55 Volt --> 0.55 Volt No Conversion Required
Acceptor Concentration: 1100 1 per Cubic Meter --> 1100 1 per Cubic Meter No Conversion Required
Donor Concentration: 190000000000000 1 per Cubic Meter --> 190000000000000 1 per Cubic Meter No Conversion Required
Intrinsic Electron Concentration: 17 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

ψ_o = V_t*ln((N_a*N_d)/(n_i^2)) --> 0.55*ln((1100*190000000000000)/(17^2))

Evaluating ... ...

ψ_o = 18.8180761773197

STEP 3: Convert Result to Output's Unit

18.8180761773197 Volt --> No Conversion Required

FINAL ANSWER

18.8180761773197 ≈ 18.81808 Volt <-- Built-in Potential

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » CMOS Design and Applications » CMOS Design Characteristics » Built-in Potential

Credits

Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 1900+ more calculators!

< 24 CMOS Design Characteristics Calculators

Ground to Agression Capacitance

Go Adjacent Capacitance = ((Victim Driver*Time Constant Ratio*Ground Capacitance)-(Agression Driver*Ground A Capacitance))/(Agression Driver-Victim Driver*Time Constant Ratio)

Victim Driver

Go Victim Driver = (Agression Driver*(Ground A Capacitance+Adjacent Capacitance))/(Time Constant Ratio*(Adjacent Capacitance+Ground Capacitance))

Agression Driver

Go Agression Driver = (Victim Driver*Time Constant Ratio*(Adjacent Capacitance+Ground Capacitance))/(Ground A Capacitance+Adjacent Capacitance)

Thermal Voltage of CMOS

Go Thermal Voltage = Built-in Potential/ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2))

Built-in Potential

Go Built-in Potential = Thermal Voltage*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2))

Agressor Voltage

Go Agressor Voltage = (Victim Voltage*(Ground Capacitance+Adjacent Capacitance))/Adjacent Capacitance

Victim Voltage

Go Victim Voltage = (Agressor Voltage*Adjacent Capacitance)/(Ground Capacitance+Adjacent Capacitance)

Adjacent Capacitance

Go Adjacent Capacitance = (Victim Voltage*Ground Capacitance)/(Agressor Voltage-Victim Voltage)

Branching Effort

Go Branching Effort = (Capacitance Onpath+Capacitance Offpath)/Capacitance Onpath

Output Clock Phase

Go Output Clock Phase = 2*pi*VCO Control Voltage*VCO Gain

Total Capacitance Seen by Stage

Go Total Capacitance in Stage = Capacitance Onpath+Capacitance Offpath

Capacitance Offpath

Go Capacitance Offpath = Total Capacitance in Stage-Capacitance Onpath

Capacitance Onpath

Go Capacitance Onpath = Total Capacitance in Stage-Capacitance Offpath

Time Constant Ratio of Agression to Victim

Go Time Constant Ratio = Agression Time Constant/Victim Time Constant

Agression Time Constant

Go Agression Time Constant = Time Constant Ratio*Victim Time Constant

Victim Time Constant

Go Victim Time Constant = Agression Time Constant/Time Constant Ratio

Off-Path Capacitance of CMOS

Go Capacitance Offpath = Capacitance Onpath*(Branching Effort-1)

Change in Frequency Clock

Go Change in Frequency of Clock = VCO Gain*VCO Control Voltage

VCO Single Gain Factor

Go VCO Gain = Change in Frequency of Clock/VCO Control Voltage

VCO Control Voltage

Go VCO Control Voltage = Lock Voltage+VCO Offset Voltage

VCO Offset Voltage

Go VCO Offset Voltage = VCO Control Voltage-Lock Voltage

Lock Voltage

Go Lock Voltage = VCO Control Voltage-VCO Offset Voltage

Static Power Dissipation

Go Static Power = Static Current*Base Collector Voltage

Static Current

Go Static Current = Static Power/Base Collector Voltage

Built-in Potential Formula

Built-in Potential = Thermal Voltage*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2))
ψ_o = V_t*ln((N_a*N_d)/(n_i^2))

On what principle MOS diffusion capacitance model works?

A MOS transistor can be viewed as a four-terminal device with capacitances between each terminal pair. The gate capacitance includes an intrinsic component (to the body, source and drain, or source alone, depending on operating regime) and overlap terms with the source and drain. The source and drain have parasitic diffusion capacitance to the body.

How to Calculate Built-in Potential?

Built-in Potential calculator uses Built-in Potential = Thermal Voltage*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2)) to calculate the Built-in Potential, The Built-in potential formula is defined as the built-in potential in a semiconductor which equals the potential across the depletion region in thermal equilibrium. It also equals the sum of the bulk potentials of each region, since the bulk potential quantifies the distance between the fermi energy and the intrinsic energy. Built-in Potential is denoted by ψ_o symbol.

How to calculate Built-in Potential using this online calculator? To use this online calculator for Built-in Potential, enter Thermal Voltage (V_t), Acceptor Concentration (N_a), Donor Concentration (N_d) & Intrinsic Electron Concentration (n_i) and hit the calculate button. Here is how the Built-in Potential calculation can be explained with given input values -> 18.81808 = 0.55*ln((1100*190000000000000)/(17^2)).

FAQ

What is Built-in Potential?

The Built-in potential formula is defined as the built-in potential in a semiconductor which equals the potential across the depletion region in thermal equilibrium. It also equals the sum of the bulk potentials of each region, since the bulk potential quantifies the distance between the fermi energy and the intrinsic energy and is represented as ψ_o = V_t*ln((N_a*N_d)/(n_i^2)) or Built-in Potential = Thermal Voltage*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2)). Thermal Voltage is the voltage produced within the p-n junction, Acceptor Concentration is the concentration of holes in acceptor state, Donor concentration is the concentration of electrons in the donor state & Intrinsic Electron Concentration is defined as the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.

How to calculate Built-in Potential?

The Built-in potential formula is defined as the built-in potential in a semiconductor which equals the potential across the depletion region in thermal equilibrium. It also equals the sum of the bulk potentials of each region, since the bulk potential quantifies the distance between the fermi energy and the intrinsic energy is calculated using Built-in Potential = Thermal Voltage*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2)). To calculate Built-in Potential, you need Thermal Voltage (V_t), Acceptor Concentration (N_a), Donor Concentration (N_d) & Intrinsic Electron Concentration (n_i). With our tool, you need to enter the respective value for Thermal Voltage, Acceptor Concentration, Donor Concentration & Intrinsic Electron Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search