How is long channel model derived?
Long channel model is derived relating the current and voltage (I-V) for an nMOS transistor in each of the cutoff or subthreshold, linear and Saturation region. The model assumes that the channel length is long enough that the lateral electric field (the field between source and drain) is relatively low, which is no longer the case in nanometer devices. This model is variously known as the long-channel, ideal, first-order, or Shockley model.
How to Calculate Channel Charge?
Channel Charge calculator uses Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage) to calculate the Channel Charge, The Channel Charge formula is defined as matter that causes it to experience a force when placed in an electromagnetic field. Channel Charge is denoted by Q_{ch} symbol.
How to calculate Channel Charge using this online calculator? To use this online calculator for Channel Charge, enter Gate Capacitance (C_{g}), Gate to Channel Voltage (V_{gc}) & Threshold Voltage (V_{t}) and hit the calculate button. Here is how the Channel Charge calculation can be explained with given input values -> 399.9831 = 5.961E-05*(7.011-0.3).