Channel Charge Calculator

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VLSI Material Optimization

Analog VLSI Design

✖Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.ⓘ Gate Capacitance [C_g]			+10% -10%
✖Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.ⓘ Gate to Channel Voltage [V_gc]			+10% -10%
✖Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.ⓘ Threshold Voltage [V_t]			+10% -10%

✖Channel Charge is defined as force experienced of a matter, when placed in an electromagnetic field.ⓘ Channel Charge [Q_ch]

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Formula

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Channel Charge

Formula

`"Q"_{"ch"} = "C"_{"g"}*("V"_{"gc"}-"V"_{"t"})`

Example

`"0.400043mC"="59.61μF"*("7.011V"-"0.3V")`

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Channel Charge Solution

STEP 0: Pre-Calculation Summary

Formula Used

Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)
Q_ch = C_g*(V_gc-V_t)
This formula uses 4 Variables

Variables Used

Channel Charge - (Measured in Coulomb) - Channel Charge is defined as force experienced of a matter, when placed in an electromagnetic field.
Gate Capacitance - (Measured in Farad) - Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.
Gate to Channel Voltage - (Measured in Volt) - Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.
Threshold Voltage - (Measured in Volt) - Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.

STEP 1: Convert Input(s) to Base Unit

Gate Capacitance: 59.61 Microfarad --> 5.961E-05 Farad (Check conversion here)
Gate to Channel Voltage: 7.011 Volt --> 7.011 Volt No Conversion Required
Threshold Voltage: 0.3 Volt --> 0.3 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

Q_ch = C_g*(V_gc-V_t) --> 5.961E-05*(7.011-0.3)

Evaluating ... ...

Q_ch = 0.00040004271

STEP 3: Convert Result to Output's Unit

0.00040004271 Coulomb -->0.40004271 Millicoulomb (Check conversion here)

FINAL ANSWER

0.40004271 ≈ 0.400043 Millicoulomb <-- Channel Charge

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< 25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI

Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

Surface Potential

Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

Subthreshold Slope

Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

Gate Capacitance

Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

Channel Charge

Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Channel Charge Formula

Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)
Q_ch = C_g*(V_gc-V_t)

How is long channel model derived?

Long channel model is derived relating the current and voltage (I-V) for an nMOS transistor in each of the cutoff or subthreshold, linear and Saturation region. The model assumes that the channel length is long enough that the lateral electric field (the field between source and drain) is relatively low, which is no longer the case in nanometer devices. This model is variously known as the long-channel, ideal, first-order, or Shockley model.

How to Calculate Channel Charge?

Channel Charge calculator uses Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage) to calculate the Channel Charge, The Channel Charge formula is defined as matter that causes it to experience a force when placed in an electromagnetic field. Channel Charge is denoted by Q_ch symbol.

How to calculate Channel Charge using this online calculator? To use this online calculator for Channel Charge, enter Gate Capacitance (C_g), Gate to Channel Voltage (V_gc) & Threshold Voltage (V_t) and hit the calculate button. Here is how the Channel Charge calculation can be explained with given input values -> 399.9831 = 5.961E-05*(7.011-0.3).

FAQ

What is Channel Charge?

The Channel Charge formula is defined as matter that causes it to experience a force when placed in an electromagnetic field and is represented as Q_ch = C_g*(V_gc-V_t) or Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage). Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor, Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage & Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.

How to calculate Channel Charge?

The Channel Charge formula is defined as matter that causes it to experience a force when placed in an electromagnetic field is calculated using Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage). To calculate Channel Charge, you need Gate Capacitance (C_g), Gate to Channel Voltage (V_gc) & Threshold Voltage (V_t). With our tool, you need to enter the respective value for Gate Capacitance, Gate to Channel Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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