DIBL Coefficient Calculator

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VLSI Material Optimization

Analog VLSI Design

✖Threshold Voltage dibl is defined as the minimum voltage required by the source junction of the body potential, when source is at body potential.ⓘ Threshold Voltage DIBL [V_t0]			+10% -10%
✖Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.ⓘ Threshold Voltage [V_t]			+10% -10%
✖Drain to source Potential is potential between drain and source.ⓘ Drain to Source Potential [V_ds]			+10% -10%

✖DIBL coefficient in a cmos device is resprented typically on the order of 0.1.ⓘ DIBL Coefficient [η]

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Formula

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DIBL Coefficient

Formula

`"η" = ("V"_{"t0"}-"V"_{"t"})/"V"_{"ds"}`

Example

`"0.2"=("0.59V"-"0.3V")/"1.45V"`

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DIBL Coefficient Solution

STEP 0: Pre-Calculation Summary

Formula Used

DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential
η = (V_t0-V_t)/V_ds
This formula uses 4 Variables

Variables Used

DIBL Coefficient - DIBL coefficient in a cmos device is resprented typically on the order of 0.1.
Threshold Voltage DIBL - (Measured in Volt) - Threshold Voltage dibl is defined as the minimum voltage required by the source junction of the body potential, when source is at body potential.
Threshold Voltage - (Measured in Volt) - Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.
Drain to Source Potential - (Measured in Volt) - Drain to source Potential is potential between drain and source.

STEP 1: Convert Input(s) to Base Unit

Threshold Voltage DIBL: 0.59 Volt --> 0.59 Volt No Conversion Required
Threshold Voltage: 0.3 Volt --> 0.3 Volt No Conversion Required
Drain to Source Potential: 1.45 Volt --> 1.45 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

η = (V_t0-V_t)/V_ds --> (0.59-0.3)/1.45

Evaluating ... ...

η = 0.2

STEP 3: Convert Result to Output's Unit

0.2 --> No Conversion Required

FINAL ANSWER

0.2 <-- DIBL Coefficient

(Calculation completed in 00.004 seconds)

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Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

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Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

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Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

Gate Capacitance

Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

Subthreshold Slope

Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

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Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

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Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

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Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

DIBL Coefficient Formula

DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential
η = (V_t0-V_t)/V_ds

What is the significance of Drain-Induced Barrier Lowering(DIBL)?

The drain voltage Vds creates an electric field that affects the threshold voltage. This drain-induced barrier lowering (DIBL) effect is especially pronounced in short-channel transistors. Drain-induced barrier lowering causes Ids to increase with Vds in saturation, in much the same way as channel length modulation does. This effect can be lumped into a smaller Early voltage VA. Again, this is a bane for analog design but insignificant for most digital circuits. More significantly, DIBL increases subthreshold leakage at high Vds.

How to Calculate DIBL Coefficient?

DIBL Coefficient calculator uses DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential to calculate the DIBL Coefficient, The DIBL coefficient formula is defined as drain-induced barrier lowering (DIBL) effect is especially pronounced in short-channel transistors. DIBL Coefficient is denoted by η symbol.

How to calculate DIBL Coefficient using this online calculator? To use this online calculator for DIBL Coefficient, enter Threshold Voltage DIBL (V_t0), Threshold Voltage (V_t) & Drain to Source Potential (V_ds) and hit the calculate button. Here is how the DIBL Coefficient calculation can be explained with given input values -> 1.576087 = (0.59-0.3)/1.45.

FAQ

What is DIBL Coefficient?

The DIBL coefficient formula is defined as drain-induced barrier lowering (DIBL) effect is especially pronounced in short-channel transistors and is represented as η = (V_t0-V_t)/V_ds or DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential. Threshold Voltage dibl is defined as the minimum voltage required by the source junction of the body potential, when source is at body potential, Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals & Drain to source Potential is potential between drain and source.

How to calculate DIBL Coefficient?

The DIBL coefficient formula is defined as drain-induced barrier lowering (DIBL) effect is especially pronounced in short-channel transistors is calculated using DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential. To calculate DIBL Coefficient, you need Threshold Voltage DIBL (V_t0), Threshold Voltage (V_t) & Drain to Source Potential (V_ds). With our tool, you need to enter the respective value for Threshold Voltage DIBL, Threshold Voltage & Drain to Source Potential and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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