Critical Voltage Solution

STEP 0: Pre-Calculation Summary
Formula Used
Critical Voltage = Critical Electric Field*Electric Field Across Channel Length
Vx = Ex*Ech
This formula uses 3 Variables
Variables Used
Critical Voltage - (Measured in Volt) - Critical Voltage is the minimum phase to the neutral voltage which glows and appears all along the line conductor.
Critical Electric Field - (Measured in Volt per Meter) - Critical Electric Field is defined as the electric force per unit charge.
Electric Field Across Channel Length - (Measured in Volt per Meter) - Electric Field Across Channel Lengthis the produced electric field in the channel during the process.
STEP 1: Convert Input(s) to Base Unit
Critical Electric Field: 0.004 Volt per Millimeter --> 4 Volt per Meter (Check conversion ​here)
Electric Field Across Channel Length: 0.007 Volt per Millimeter --> 7 Volt per Meter (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vx = Ex*Ech --> 4*7
Evaluating ... ...
Vx = 28
STEP 3: Convert Result to Output's Unit
28 Volt --> No Conversion Required
FINAL ANSWER
28 Volt <-- Critical Voltage
(Calculation completed in 00.007 seconds)

Credits

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Created by Shobhit Dimri
Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
Shobhit Dimri has created this Calculator and 900+ more calculators!
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Verified by Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI
​ Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))
Body Effect Coefficient
​ Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))
Junction Built-in Voltage VLSI
​ Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)
PN Junction Depletion Depth with Source VLSI
​ Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))
Total Source Parasitic Capacitance
​ Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)
Short Channel Saturation Current VLSI
​ Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage
Junction Current
​ Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)
Surface Potential
​ Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)
DIBL Coefficient
​ Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential
Threshold Voltage when Source is at Body Potential
​ Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage
Subthreshold Slope
​ Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)
Threshold Voltage
​ Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
Gate Capacitance
​ Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)
Channel Charge
​ Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)
Gate Length using Gate Oxide Capacitance
​ Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)
Gate Oxide Capacitance
​ Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)
Oxide Capacitance after Full Scaling VLSI
​ Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor
Critical Voltage
​ Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length
Gate Oxide Thickness after Full Scaling VLSI
​ Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor
Intrinsic Gate Capacitance
​ Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width
Channel Length after Full Scaling VLSI
​ Go Channel Length after Full Scaling = Channel Length/Scaling Factor
Junction Depth after Full Scaling VLSI
​ Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor
Channel Width after Full Scaling VLSI
​ Go Channel Width after Full Scaling = Channel Width/Scaling Factor
Mobility in Mosfet
​ Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer
K-Prime
​ Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Critical Voltage Formula

Critical Voltage = Critical Electric Field*Electric Field Across Channel Length
Vx = Ex*Ech

What is mobility degradation?

A high voltage at the gate of the transistor attracts the carriers to the edge of the channel, causing collisions with the oxide interface that slow the carriers. This is called mobility degradation.

What is velocity saturation?

Carriers approach a maximum velocity vsat when high fields are applied. This phenomenon is called velocity saturation.

How to Calculate Critical Voltage?

Critical Voltage calculator uses Critical Voltage = Critical Electric Field*Electric Field Across Channel Length to calculate the Critical Voltage, The Critical Voltage formula is defined as the drain-source voltage at which the critical effective field is reached. Critical Voltage is denoted by Vx symbol.

How to calculate Critical Voltage using this online calculator? To use this online calculator for Critical Voltage, enter Critical Electric Field (Ex) & Electric Field Across Channel Length (Ech) and hit the calculate button. Here is how the Critical Voltage calculation can be explained with given input values -> 28 = 4*7.

FAQ

What is Critical Voltage?
The Critical Voltage formula is defined as the drain-source voltage at which the critical effective field is reached and is represented as Vx = Ex*Ech or Critical Voltage = Critical Electric Field*Electric Field Across Channel Length. Critical Electric Field is defined as the electric force per unit charge & Electric Field Across Channel Lengthis the produced electric field in the channel during the process.
How to calculate Critical Voltage?
The Critical Voltage formula is defined as the drain-source voltage at which the critical effective field is reached is calculated using Critical Voltage = Critical Electric Field*Electric Field Across Channel Length. To calculate Critical Voltage, you need Critical Electric Field (Ex) & Electric Field Across Channel Length (Ech). With our tool, you need to enter the respective value for Critical Electric Field & Electric Field Across Channel Length and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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