Collector to Emitter Voltage at Saturation Solution

STEP 0: Pre-Calculation Summary
Formula Used
Collector-Emitter Voltage = Base-Emitter Voltage-Base-Collector Voltage
VCE = VBE-VBC
This formula uses 3 Variables
Variables Used
Collector-Emitter Voltage - (Measured in Volt) - Collector-Emitter Voltage is the electric potential between the base and collector region of a transistor.
Base-Emitter Voltage - (Measured in Volt) - Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor.
Base-Collector Voltage - (Measured in Volt) - Base-Collector Voltage is the electric potential between the base and collector region of a transistor.
STEP 1: Convert Input(s) to Base Unit
Base-Emitter Voltage: 5.15 Volt --> 5.15 Volt No Conversion Required
Base-Collector Voltage: 2 Volt --> 2 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
VCE = VBE-VBC --> 5.15-2
Evaluating ... ...
VCE = 3.15
STEP 3: Convert Result to Output's Unit
3.15 Volt --> No Conversion Required
FINAL ANSWER
3.15 Volt <-- Collector-Emitter Voltage
(Calculation completed in 00.020 seconds)

Credits

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Created by Payal Priya
Birsa Institute of Technology (BIT), Sindri
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Verified by Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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12 Voltage Calculators

Finite Input Voltage of BJT at Unity Gain Frequency given Complex Frequency Variable
​ Go Input Voltage = Base Current/((1/Input Resistance)+Complex Frequency Variable*(Collector-Base Junction Capacitance+Base–Emitter Junction Capacitance))
Voltage across Collector-Emitter of BJT Amplifier
​ Go Collector-Emitter Voltage = Supply Voltage-Load Resistance*Saturation Current*e^(Base-Emitter Voltage/Threshold Voltage)
Finite Input Voltage of BJT at Unity Gain Frequency
​ Go Input Voltage = Base Current*(1/Input Resistance+1/Collector-Base Junction Capacitance+1/Emitter-Base Capacitance)
Single Component of Drain Voltage given Transconductance
​ Go Total Instantaneous Drain Voltage = -Transconductance*Input Voltage*Load Resistance
Voltage between Gate and Source
​ Go Gate to Source Voltage = Input Voltage/(1+Transconductance*Resistance)
Output Voltage given Transconductance
​ Go Output Voltage = -(Transconductance*Load Resistance*Input Voltage)
Small Signal Input Voltage given Transconductance
​ Go Small Signal = Input Voltage*(1/(1+Transconductance*Resistance))
Output Voltage of BJT Amplifier
​ Go Output Voltage = Supply Voltage-Drain Current*Load Resistance
Single Component of Drain Voltage
​ Go Total Instantaneous Drain Voltage = (-Change in Drain Current*Load Resistance)
Collector to Emitter Voltage at Saturation
​ Go Collector-Emitter Voltage = Base-Emitter Voltage-Base-Collector Voltage
Total Instantaneous Gate-to-Source Voltage
​ Go Gate to Source Voltage = Small Signal+Voltage Across Oxide
Supply Voltage at Maximum Power Dissipation
​ Go Supply Voltage = (pi*Power)/2

20 BJT Circuit Calculators

Transition Frequency of BJT
​ Go Transition Frequency = Transconductance/(2*pi*(Emitter-Base Capacitance+Collector-Base Junction Capacitance))
Base Current of PNP Transistor using Saturation Current
​ Go Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage)
Total Power Dissipated in BJT
​ Go Power = Collector-Emitter Voltage*Collector Current+Base-Emitter Voltage*Base Current
Unity-Gain Bandwidth of BJT
​ Go Unity-Gain Bandwidth = Transconductance/(Emitter-Base Capacitance+Collector-Base Junction Capacitance)
Reference Current of BJT Mirror
​ Go Reference Current = Collector Current+(2*Collector Current)/Common Emitter Current Gain
Common Mode Rejection Ratio
​ Go Common Mode Rejection Ratio = 20*log10(Differential Mode Gain/Common Mode Gain)
Output Resistance of BJT
​ Go Resistance = (Supply Voltage+Collector-Emitter Voltage)/Collector Current
Thermal Equilibrium Concentration of Minority Charge Carrier
​ Go Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base
Output Voltage of BJT Amplifier
​ Go Output Voltage = Supply Voltage-Drain Current*Load Resistance
Total Power Supplied in BJT
​ Go Power = Supply Voltage*(Collector Current+Input Current)
Common-Base Current Gain
​ Go Common-Base Current Gain = Common Emitter Current Gain/(Common Emitter Current Gain+1)
Collector to Emitter Voltage at Saturation
​ Go Collector-Emitter Voltage = Base-Emitter Voltage-Base-Collector Voltage
Base Current of PNP Transistor given Emitter Current
​ Go Base Current = Emitter Current/(Common Emitter Current Gain+1)
Base Current of PNP Transistor using Collector Current
​ Go Base Current = Collector Current/Common Emitter Current Gain
Collector Current using Emitter Current
​ Go Collector Current = Common-Base Current Gain*Emitter Current
Base Current of PNP Transistor using Common-Base Current Gain
​ Go Base Current = (1-Common-Base Current Gain)*Emitter Current
Collector Current of BJT
​ Go Collector Current = Emitter Current-Base Current
Emitter Current of BJT
​ Go Emitter Current = Collector Current+Base Current
Short-Circuit Transconductance
​ Go Transconductance = Output Current/Input Voltage
Intrinsic Gain of BJT
​ Go Intrinsic Gain = Early Voltage/Thermal Voltage

Collector to Emitter Voltage at Saturation Formula

Collector-Emitter Voltage = Base-Emitter Voltage-Base-Collector Voltage
VCE = VBE-VBC

What is VCEsat ?

The collector-to-emitter voltage vCE of a saturated transistor can be found
as the difference between the forward-bias voltages of the EBJ and the CBJ.

How to Calculate Collector to Emitter Voltage at Saturation?

Collector to Emitter Voltage at Saturation calculator uses Collector-Emitter Voltage = Base-Emitter Voltage-Base-Collector Voltage to calculate the Collector-Emitter Voltage, The Collector to emitter voltage at saturation is the ratio of voltage across base-emitter junction and voltage across the base-collector junction at saturation mode. Collector-Emitter Voltage is denoted by VCE symbol.

How to calculate Collector to Emitter Voltage at Saturation using this online calculator? To use this online calculator for Collector to Emitter Voltage at Saturation, enter Base-Emitter Voltage (VBE) & Base-Collector Voltage (VBC) and hit the calculate button. Here is how the Collector to Emitter Voltage at Saturation calculation can be explained with given input values -> 3.15 = 5.15-2.

FAQ

What is Collector to Emitter Voltage at Saturation?
The Collector to emitter voltage at saturation is the ratio of voltage across base-emitter junction and voltage across the base-collector junction at saturation mode and is represented as VCE = VBE-VBC or Collector-Emitter Voltage = Base-Emitter Voltage-Base-Collector Voltage. Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor & Base-Collector Voltage is the electric potential between the base and collector region of a transistor.
How to calculate Collector to Emitter Voltage at Saturation?
The Collector to emitter voltage at saturation is the ratio of voltage across base-emitter junction and voltage across the base-collector junction at saturation mode is calculated using Collector-Emitter Voltage = Base-Emitter Voltage-Base-Collector Voltage. To calculate Collector to Emitter Voltage at Saturation, you need Base-Emitter Voltage (VBE) & Base-Collector Voltage (VBC). With our tool, you need to enter the respective value for Base-Emitter Voltage & Base-Collector Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Collector-Emitter Voltage?
In this formula, Collector-Emitter Voltage uses Base-Emitter Voltage & Base-Collector Voltage. We can use 1 other way(s) to calculate the same, which is/are as follows -
  • Collector-Emitter Voltage = Supply Voltage-Load Resistance*Saturation Current*e^(Base-Emitter Voltage/Threshold Voltage)
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