Concentration of electrons injected from emitter to base Calculator

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✖Thermal Equilibrium Value is the value of the thermal equilibrium of the minority-carrier (electron) concentration in the base region.ⓘ Thermal Equilibrium Value [n_po]			+10% -10%
✖The voltage across the base–emitter junction is the forward voltage between the base and emitter of the transistor.ⓘ Voltage across the base–emitter junction [V_BE]			+10% -10%
✖Thermal Voltage is the voltage produced within the p-n junction.ⓘ Thermal voltage [V_t]			+10% -10%

✖The concentration of e- injected from emitter to base is the number of electrons passed from emitter to the base.ⓘ Concentration of electrons injected from emitter to base [n_p]

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Payal Priya

Birsa Institute of Technology (BIT), Sindri

Payal Priya has created this Calculator and 300+ more calculators!

Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< 11 Other formulas that you can solve using the same Inputs

Base current when saturation current in DC is given

Base Current=(Saturation current/Common emitter current gain)*e^(Voltage across the base–emitter junction/Thermal voltage)+Saturation Vapour Pressure at Water Surface*e^(Voltage across base-collector junction/Thermal voltage) GO

Collector current when saturation current of DC is given

Collector current=Saturation current*e^(Voltage across the base–emitter junction/Thermal voltage)-Saturation current for DC*e^(Voltage across base-collector junction/Thermal voltage) GO

Emitter current when common-emitter current gain is given

Emitter current=((Common emitter current gain+1)/Common emitter current gain)*Saturation current*e^(Voltage across the base–emitter junction/Thermal voltage) GO

Emitter current through minor carrier concentration

Emitter current=Cross-section area of base-emitter junction*[Charge-e]*Electron Diffusivity*(-Thermal Equilibrium Value/Width of base) GO

Saturation current

Saturation current=Cross-section area of base-emitter junction*[Charge-e]*Electron Diffusivity*Thermal Equilibrium Value/Width of base GO

Base Current 2 of BJT

Base Current 2=(Saturation current/Common emitter current gain)*(e^(Voltage across the base–emitter junction/Thermal voltage)) GO

Emitter current when constant of the transistor is given

Emitter current=(Saturation current/Common-base current gain.)*e^(Voltage across the base–emitter junction/Thermal voltage) GO

Collector to emitter voltage at saturation

Collector to emitter voltage at saturation=Voltage across the base–emitter junction-Voltage across base-collector junction GO

Collector current when saturation current is given

Collector current=Saturation current*e^(Voltage across the base–emitter junction/Thermal voltage) GO

Collector Current of BJT

Collector current=Saturation current*e^(Voltage across the base–emitter junction/Thermal voltage) GO

Collector current of PNP transistor

Collector current=Saturation current*e^(Voltage across emitter-base junction/Thermal voltage) GO

Concentration of electrons injected from emitter to base Formula

Concentration of e- injected from emitter to base=Thermal Equilibrium Value*e^(Voltage across the base–emitter junction/Thermal voltage)
np=npo*e^(VBE/Vt)

More formulas

Collector Current of BJT GO

Base Current 1 of BJT GO

Base Current 2 of BJT GO

Total base current GO

Emitter Current GO

Emitter current when common-emitter current gain is given GO

Emitter current when saturation current is given GO

Collector current when emitter current is given GO

Common-base current gain GO

Emitter current when constant of the transistor is given GO

Common-emitter current gain in terms of common-base current gain GO

Collector current when saturation current of DC is given GO

How minority charge carriers are distributed in BJT?

The physical operation of the BJT can be enhanced by considering the distribution of minority charge carriers in the base and the emitter. The profiles of the concentration of electrons in the base and holes in the emitter of an NPN transistor operating in the active mode. Observe that since the doping concentration in the emitter, ND, is much higher than the doping concentration in the base, NA, the concentration of electrons injected from emitter to base, n _p(0), is much higher than the concentration of holes injected from the base to the emitter, p_n(0). Both quantities are proportional to e^{v_BE /V_T}.

How to Calculate Concentration of electrons injected from emitter to base?

Concentration of electrons injected from emitter to base calculator uses Concentration of e- injected from emitter to base=Thermal Equilibrium Value*e^(Voltage across the base–emitter junction/Thermal voltage) to calculate the Concentration of e- injected from emitter to base, The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor. Concentration of e- injected from emitter to base and is denoted by n_p symbol.

How to calculate Concentration of electrons injected from emitter to base using this online calculator? To use this online calculator for Concentration of electrons injected from emitter to base, enter Thermal Equilibrium Value (n_po), Voltage across the base–emitter junction (V_BE) and Thermal voltage (V_t) and hit the calculate button. Here is how the Concentration of electrons injected from emitter to base calculation can be explained with given input values -> 4.026E+76 = 0.04*e^(5/0.02585).

FAQ

What is Concentration of electrons injected from emitter to base?

The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor and is represented as n_p=n_po*e^(V_BE/V_t) or Concentration of e- injected from emitter to base=Thermal Equilibrium Value*e^(Voltage across the base–emitter junction/Thermal voltage). Thermal Equilibrium Value is the value of the thermal equilibrium of the minority-carrier (electron) concentration in the base region, The voltage across the base–emitter junction is the forward voltage between the base and emitter of the transistor and Thermal Voltage is the voltage produced within the p-n junction.

How to calculate Concentration of electrons injected from emitter to base?

The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor is calculated using Concentration of e- injected from emitter to base=Thermal Equilibrium Value*e^(Voltage across the base–emitter junction/Thermal voltage). To calculate Concentration of electrons injected from emitter to base, you need Thermal Equilibrium Value (n_po), Voltage across the base–emitter junction (V_BE) and Thermal voltage (V_t). With our tool, you need to enter the respective value for Thermal Equilibrium Value, Voltage across the base–emitter junction and Thermal voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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