Calculator A to Z
🔍
🔍

Concentration of electrons injected from emitter to base Calculator

Main CategoryEngineering ↺
EngineeringElectrical ↺
ElectricalMicroelectronic Circuits ↺
Microelectronic CircuitsBipolar Junction Transistors (BJTs) ↺
Bipolar Junction Transistors (BJTs) Device Structure and Physical Operation ↺
Device Structure and Physical OperationCurrent flow ↺
✖Thermal Equilibrium Value is the value of the thermal equilibrium of the minority-carrier (electron) concentration in the base region.ⓘ Thermal Equilibrium Value [npo]
+10%
-10%
✖The voltage across the base–emitter junction is the forward voltage between the base and emitter of the transistor.ⓘ Voltage across the base–emitter junction [VBE]
+10%
-10%
✖Thermal Voltage is the voltage produced within the p-n junction.ⓘ Thermal voltage [Vt]
+10%
-10%
✖The concentration of e- injected from emitter to base is the number of electrons passed from emitter to the base.ⓘ Concentration of electrons injected from emitter to base [np]
⎘ Copy
👎
Formula
Reset
👍

Credits

Payal Priya
Birsa Institute of Technology (BIT), Sindri
Payal Priya has created this Calculator and 500+ more calculators!
Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
Urvi Rathod has verified this Calculator and 1000+ more calculators!

Concentration of electrons injected from emitter to base Solution

STEP 0: Pre-Calculation Summary
Formula Used
concentration_of_electrons_injected_from_emitter_to_base = Thermal Equilibrium Value*e^(Voltage across the base–emitter junction/Thermal voltage)
np = npo*e^(VBE/Vt)
This formula uses 1 Constants, 3 Variables
Constants Used
e - Napier's constant Value Taken As 2.71828182845904523536028747135266249
Variables Used
Thermal Equilibrium Value - Thermal Equilibrium Value is the value of the thermal equilibrium of the minority-carrier (electron) concentration in the base region. (Measured in Joule)
Voltage across the base–emitter junction - The voltage across the base–emitter junction is the forward voltage between the base and emitter of the transistor. (Measured in Volt)
Thermal voltage - Thermal Voltage is the voltage produced within the p-n junction. (Measured in Millivolt)
STEP 1: Convert Input(s) to Base Unit
Thermal Equilibrium Value: 0.04 Joule --> 0.04 Joule No Conversion Required
Voltage across the base–emitter junction: 5 Volt --> 5 Volt No Conversion Required
Thermal voltage: 25.85 Millivolt --> 0.02585 Volt (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
np = npo*e^(VBE/Vt) --> 0.04*e^(5/0.02585)
Evaluating ... ...
np = 4.02588285041581E+82
STEP 3: Convert Result to Output's Unit
4.02588285041581E+82 1 per Cubic Meter -->4.02588285041581E+76 1 per Cubic Centimeter (Check conversion here)
FINAL ANSWER
4.02588285041581E+76 1 per Cubic Centimeter <-- Concentration of e- injected from emitter to base
(Calculation completed in 00.016 seconds)
You are here

10+ Current flow Calculators

Emitter current when common-emitter current gain is given
emitter_current = ((Common emitter current gain+1)/Common emitter current gain)*Saturation current*e^(Voltage across the base–emitter junction/Thermal voltage) Go
Base Current 2 of BJT
base_current_2 = (Saturation current/Common emitter current gain)*(e^(Voltage across the base–emitter junction/Thermal voltage)) Go
Emitter current when constant of the transistor is given
emitter_current = (Saturation current/Common-base current gain.)*e^(Voltage across the base–emitter junction/Thermal voltage) Go
Collector Current of BJT
collector_current = Saturation current*e^(Voltage across the base–emitter junction/Thermal voltage) Go
Emitter current when collector current and current gain is given
emitter_current = ((Common emitter current gain+1)/Common emitter current gain)*Collector current Go
Common-base current gain
common_base_current_gain = Common emitter current gain/(Common emitter current gain+1) Go
Common-emitter current gain in terms of common-base current gain
common_emitter_current_gain = Common-base current gain./(1-Common-base current gain.) Go
Base Current 1 of BJT
base_current_1 = Collector current/Common emitter current gain Go
Emitter Current of BJT
emitter_current = Collector current+Base Current Go
Total base current
base_current = Base current 1+Base Current 2 Go

Concentration of electrons injected from emitter to base Formula

concentration_of_electrons_injected_from_emitter_to_base = Thermal Equilibrium Value*e^(Voltage across the base–emitter junction/Thermal voltage)
np = npo*e^(VBE/Vt)

How minority charge carriers are distributed in BJT?

The physical operation of the BJT can be enhanced by considering the distribution of minority charge carriers in the base and the emitter. The profiles of the concentration of electrons in the base and holes in the emitter of an NPN transistor operating in the active mode. Observe that since the doping concentration in the emitter, ND, is much higher than the doping concentration in the base, NA, the concentration of electrons injected from emitter to base, n p(0), is much higher than the concentration of holes injected from the base to the emitter, pn(0). Both quantities are proportional to evBE /VT.

How to Calculate Concentration of electrons injected from emitter to base?

Concentration of electrons injected from emitter to base calculator uses concentration_of_electrons_injected_from_emitter_to_base = Thermal Equilibrium Value*e^(Voltage across the base–emitter junction/Thermal voltage) to calculate the Concentration of e- injected from emitter to base, The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor. Concentration of e- injected from emitter to base and is denoted by np symbol.

How to calculate Concentration of electrons injected from emitter to base using this online calculator? To use this online calculator for Concentration of electrons injected from emitter to base, enter Thermal Equilibrium Value (npo), Voltage across the base–emitter junction (VBE) and Thermal voltage (Vt) and hit the calculate button. Here is how the Concentration of electrons injected from emitter to base calculation can be explained with given input values -> 4.026E+76 = 0.04*e^(5/0.02585).

FAQ

What is Concentration of electrons injected from emitter to base?
The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor and is represented as np = npo*e^(VBE/Vt) or concentration_of_electrons_injected_from_emitter_to_base = Thermal Equilibrium Value*e^(Voltage across the base–emitter junction/Thermal voltage). Thermal Equilibrium Value is the value of the thermal equilibrium of the minority-carrier (electron) concentration in the base region, The voltage across the base–emitter junction is the forward voltage between the base and emitter of the transistor and Thermal Voltage is the voltage produced within the p-n junction.
How to calculate Concentration of electrons injected from emitter to base?
The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor is calculated using concentration_of_electrons_injected_from_emitter_to_base = Thermal Equilibrium Value*e^(Voltage across the base–emitter junction/Thermal voltage). To calculate Concentration of electrons injected from emitter to base, you need Thermal Equilibrium Value (npo), Voltage across the base–emitter junction (VBE) and Thermal voltage (Vt). With our tool, you need to enter the respective value for Thermal Equilibrium Value, Voltage across the base–emitter junction and Thermal voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Concentration of e- injected from emitter to base?
In this formula, Concentration of e- injected from emitter to base uses Thermal Equilibrium Value, Voltage across the base–emitter junction and Thermal voltage. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • collector_current = Saturation current*e^(Voltage across the base–emitter junction/Thermal voltage)
  • base_current_1 = Collector current/Common emitter current gain
  • base_current = Base current 1+Base Current 2
  • base_current_2 = (Saturation current/Common emitter current gain)*(e^(Voltage across the base–emitter junction/Thermal voltage))
  • emitter_current = Collector current+Base Current
  • emitter_current = ((Common emitter current gain+1)/Common emitter current gain)*Saturation current*e^(Voltage across the base–emitter junction/Thermal voltage)
  • emitter_current = ((Common emitter current gain+1)/Common emitter current gain)*Collector current
  • common_base_current_gain = Common emitter current gain/(Common emitter current gain+1)
  • emitter_current = (Saturation current/Common-base current gain.)*e^(Voltage across the base–emitter junction/Thermal voltage)
  • common_emitter_current_gain = Common-base current gain./(1-Common-base current gain.)
Where is the Concentration of electrons injected from emitter to base calculator used?
Among many, Concentration of electrons injected from emitter to base calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList}
About | Contact | Disclaimer | Terms
© 2011-2021 A softusvista inc. venture!


Share Image
Let Others Know
✖
Facebook
Twitter
Reddit
LinkedIn
Email
WhatsApp
Copied!