Concentration of Electrons Injected from Emitter to Base Calculator

✖Thermal Equilibrium Concentration is defined as the concentration of carriers in an amplifier.ⓘ Thermal Equilibrium Concentration [n_po]			+10% -10%
✖Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor.ⓘ Base-Emitter Voltage [V_BE]			+10% -10%
✖Thermal Voltage is the voltage produced within the p-n junction.ⓘ Thermal Voltage [V_t]			+10% -10%

✖The concentration of e- injected from emitter to base is the number of electrons passed from emitter to the base.ⓘ Concentration of Electrons Injected from Emitter to Base [N_p]

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Formula

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Concentration of Electrons Injected from Emitter to Base

Formula

`"N"_{"p"} = "n"_{"po"}*e^("V"_{"BE"}/"V"_{"t"})`

Example

`"3E^18/m³"="1e18/m³"*e^("5.15V"/"4.7V")`

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Concentration of Electrons Injected from Emitter to Base Solution

STEP 0: Pre-Calculation Summary

Formula Used

Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage)
N_p = n_po*e^(V_BE/V_t)
This formula uses 1 Constants, 4 Variables

Constants Used

e - Napier's constant Value Taken As 2.71828182845904523536028747135266249

Variables Used

Concentration of e- Injected from Emitter to Base - (Measured in 1 per Cubic Meter) - The concentration of e- injected from emitter to base is the number of electrons passed from emitter to the base.
Thermal Equilibrium Concentration - (Measured in 1 per Cubic Meter) - Thermal Equilibrium Concentration is defined as the concentration of carriers in an amplifier.
Base-Emitter Voltage - (Measured in Volt) - Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor.
Thermal Voltage - (Measured in Volt) - Thermal Voltage is the voltage produced within the p-n junction.

STEP 1: Convert Input(s) to Base Unit

Thermal Equilibrium Concentration: 1E+18 1 per Cubic Meter --> 1E+18 1 per Cubic Meter No Conversion Required
Base-Emitter Voltage: 5.15 Volt --> 5.15 Volt No Conversion Required
Thermal Voltage: 4.7 Volt --> 4.7 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

N_p = n_po*e^(V_BE/V_t) --> 1E+18*e^(5.15/4.7)

Evaluating ... ...

N_p = 2.99140949952878E+18

STEP 3: Convert Result to Output's Unit

2.99140949952878E+18 1 per Cubic Meter --> No Conversion Required

FINAL ANSWER

2.99140949952878E+18 ≈ 3E+18 1 per Cubic Meter <-- Concentration of e- Injected from Emitter to Base

(Calculation completed in 00.004 seconds)

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Birsa Institute of Technology (BIT), Sindri

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< 10+ Internal Capacitive Effects and High Frequency Model Calculators

Collector-Base Junction Capacitance

Go Collector-Base Junction Capacitance = Collector-Base Junction Capacitance at 0 Voltage/(1+(Reverse-Bias Voltage/Built-In Voltage))^Grading Coefficient

Transition Frequency of BJT

Go Transition Frequency = Transconductance/(2*pi*(Emitter-Base Capacitance+Collector-Base Junction Capacitance))

Concentration of Electrons Injected from Emitter to Base

Go Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage)

Unity-Gain Bandwidth of BJT

Go Unity-Gain Bandwidth = Transconductance/(Emitter-Base Capacitance+Collector-Base Junction Capacitance)

Small-Signal Diffusion Capacitance of BJT

Go Emitter-Base Capacitance = Device Constant*(Collector Current/Threshold Voltage)

Thermal Equilibrium Concentration of Minority Charge Carrier

Go Thermal Equilibrium Concentration = ((Intrinsic Carrier Density)^2)/Doping Concentration of Base

Small-Signal Diffusion Capacitance

Go Emitter-Base Capacitance = Device Constant*Transconductance

Stored Electron Charge in Base of BJT

Go Stored Electron Charge = Device Constant*Collector Current

Transition Frequency of BJT given Device Constant

Go Transition Frequency = 1/(2*pi*Device Constant)

Base-Emitter Junction Capacitance

Go Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance

Concentration of Electrons Injected from Emitter to Base Formula

Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage)
N_p = n_po*e^(V_BE/V_t)

How minority charge carriers are distributed in BJT?

The physical operation of the BJT can be enhanced by considering the distribution of minority charge carriers in the base and the emitter. The profiles of the concentration of electrons in the base and holes in the emitter of an NPN transistor operating in the active mode. Observe that since the doping concentration in the emitter, ND, is much higher than the doping concentration in the base, NA, the concentration of electrons injected from emitter to base, n _p(0), is much higher than the concentration of holes injected from the base to the emitter, p_n(0). Both quantities are proportional to e^{v_BE /V_T}.

How to Calculate Concentration of Electrons Injected from Emitter to Base?

Concentration of Electrons Injected from Emitter to Base calculator uses Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage) to calculate the Concentration of e- Injected from Emitter to Base, The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor. Concentration of e- Injected from Emitter to Base is denoted by N_p symbol.

How to calculate Concentration of Electrons Injected from Emitter to Base using this online calculator? To use this online calculator for Concentration of Electrons Injected from Emitter to Base, enter Thermal Equilibrium Concentration (n_po), Base-Emitter Voltage (V_BE) & Thermal Voltage (V_t) and hit the calculate button. Here is how the Concentration of Electrons Injected from Emitter to Base calculation can be explained with given input values -> 3E+18 = 1E+18*e^(5.15/4.7).

FAQ

What is Concentration of Electrons Injected from Emitter to Base?

The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor and is represented as N_p = n_po*e^(V_BE/V_t) or Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage). Thermal Equilibrium Concentration is defined as the concentration of carriers in an amplifier, Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor & Thermal Voltage is the voltage produced within the p-n junction.

How to calculate Concentration of Electrons Injected from Emitter to Base?

The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor is calculated using Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage). To calculate Concentration of Electrons Injected from Emitter to Base, you need Thermal Equilibrium Concentration (n_po), Base-Emitter Voltage (V_BE) & Thermal Voltage (V_t). With our tool, you need to enter the respective value for Thermal Equilibrium Concentration, Base-Emitter Voltage & Thermal Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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