Payal Priya
Birsa Institute of Technology (BIT), Sindri
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Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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11 Other formulas that you can solve using the same Inputs

Current flowing through the induced channel in the transistor
output current =(Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Effective voltage or overdrive voltage)*Voltage between drain and source GO
Current flowing through the induced channel in the transistor when Vgs is given
output current =(Mobility of electron*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage))*Saturation voltage between drain and source GO
Drain current
Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source GO
Magnitude of the electron charge in the channel of MOSFET
Electron Charge in channel=Oxide Capacitance*Width of the Channel*Length of the Channel*Effective voltage or overdrive voltage GO
Electron drift velocity of the channel in NMOS transistor
Electron Drift Velocity=Mobility of electrons at the surface of channel*Electric field across the length of the channel GO
Electric field across the length of the channel of NMOS transistor
Electric field across the length of the channel=Voltage between drain and source/Length of the Channel GO
Saturation voltage between drain and source
Saturation voltage between drain and source=Gate to source voltage-Threshold voltage GO
Effective voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Overdrive Voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Saturation drain current
Saturation drain current=[BoltZ]*((Gate to source voltage-Threshold voltage)^2) GO
Total capacitance between gate and channel of MOSFETs
Capacitance=Oxide Capacitance*Width of the Channel*Length of the Channel GO

1 Other formulas that calculate the same Output

Conductance of channel of MOSFETs
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Voltage across the oxide GO

Conductance of channel of MOSFET when Vgs is given Formula

Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage)
g<sub>DS</sub>=μ<sub>n</sub>*C<sub>ox</sub>*(w/L)*(V<sub>ov</sub>-V<sub>T</sub>)
More formulas
Effective voltage of MOSFET GO
Magnitude of the electron charge in the channel of MOSFET GO
Oxide capacitance of MOSFETs GO
Total capacitance between gate and channel of MOSFETs GO
Electric field across the length of the channel of NMOS transistor GO
Electron drift velocity of the channel in NMOS transistor GO
Current flowing through the induced channel in the transistor GO
Overdrive Voltage of MOSFET GO
Current flowing through the induced channel in the transistor when Vgs is given GO
Conductance of channel of MOSFETs GO
Process transconductance parameter of MOSFET GO
MOSFET transconductance parameter GO
MOSFET transconductance parameter in terms of process transconductance GO
MOSFET as linear resistance GO
Transistor aspect ratio GO
MOSFET as linear resistance when aspect ratio is given GO
MOSFET as linear resistance when Vgs is given GO
Current entering drain terminal of MOSFET GO
Current entering drain terminal of MOSFET when Vgs is given GO
Current entering drain terminal of MOSFET at saturation GO
Saturation voltage of MOSFET GO
Drain saturation current of MOSFET GO
Drain saturation current of MOSFET when Vgs is given GO
Differential input signal of the non-inverting configuration GO
Drain current when MOSFET operates as a voltage-controlled current source GO
Drain current when MOSFET operates as a voltage-controlled current source in terms of Vov GO
Drain current when device parameter is given GO
Positive voltage when device parameter is given in MOSFET GO
Positive voltage when the channel length is given in MOSFET GO
Output resistance of current source of MOSFET GO
Output resistance of current source when device parameter is given GO
Output resistance of current source when drain current is given GO
Drain current without channel-length modulation of MOSFET GO
Body effect in NMOS GO
Fabrication process parameter of NMOS GO
Body effect in PMOS GO

What is the difference between N channel and P channel MOSFETs?

N-Channel MOSFETs use electron flow as the charge carrier. P-Channel MOSFETs use hole flow as the charge carrier, which has less mobility than electron flow. And therefore, they have higher resistance and are less efficient. In other words, a P-Channel MOSFET will get hotter than an N-Channel MOSFET with higher loads.

How to Calculate Conductance of channel of MOSFET when Vgs is given?

Conductance of channel of MOSFET when Vgs is given calculator uses Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage) to calculate the Conductance of channel, The conductance of channel of MOSFET when Vgs is given, defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system. . Conductance of channel and is denoted by gDS symbol.

How to calculate Conductance of channel of MOSFET when Vgs is given using this online calculator? To use this online calculator for Conductance of channel of MOSFET when Vgs is given, enter Mobility of electrons at the surface of channel n), Oxide Capacitance (Cox), Width of the Channel (w), Length of the Channel (L), Effective voltage or overdrive voltage (Vov) and Threshold voltage (VT) and hit the calculate button. Here is how the Conductance of channel of MOSFET when Vgs is given calculation can be explained with given input values -> -5100000 = 2*0.017*(1E-05/3E-06)*(5-50).

FAQ

What is Conductance of channel of MOSFET when Vgs is given?
The conductance of channel of MOSFET when Vgs is given, defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system. and is represented as gDSn*Cox*(w/L)*(Vov-VT) or Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage). The mobility of electrons at the surface of channel is the movement of the electron in the channel, oxide capacitance is the capacitance of the parallel-plate capacitor per unit gate area , Width of the Channel is the dimension of the channel of MOSFET, The length of the channel, L, which is the distance between the two n+-p junctions, , Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed and Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency.
How to calculate Conductance of channel of MOSFET when Vgs is given?
The conductance of channel of MOSFET when Vgs is given, defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system. is calculated using Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage). To calculate Conductance of channel of MOSFET when Vgs is given, you need Mobility of electrons at the surface of channel n), Oxide Capacitance (Cox), Width of the Channel (w), Length of the Channel (L), Effective voltage or overdrive voltage (Vov) and Threshold voltage (VT). With our tool, you need to enter the respective value for Mobility of electrons at the surface of channel, Oxide Capacitance, Width of the Channel, Length of the Channel, Effective voltage or overdrive voltage and Threshold voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Conductance of channel?
In this formula, Conductance of channel uses Mobility of electrons at the surface of channel, Oxide Capacitance, Width of the Channel, Length of the Channel, Effective voltage or overdrive voltage and Threshold voltage. We can use 1 other way(s) to calculate the same, which is/are as follows -
  • Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Voltage across the oxide
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