Holes Diffusion Constant Solution

STEP 0: Pre-Calculation Summary
Formula Used
Holes Diffusion Constant = Mobility of Holes*(([BoltZ]*Temperature)/[Charge-e])
Dp = μp*(([BoltZ]*T)/[Charge-e])
This formula uses 2 Constants, 3 Variables
Constants Used
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23
Variables Used
Holes Diffusion Constant - (Measured in Square Meter Per Second) - Holes Diffusion Constant refers to a material property that describes the rate at which holes diffuse through the material in response to a concentration gradient.
Mobility of Holes - (Measured in Square Meter per Volt per Second) - Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field.
Temperature - (Measured in Kelvin) - Temperature is the degree or intensity of heat present in a substance or object.
STEP 1: Convert Input(s) to Base Unit
Mobility of Holes: 150 Square Meter per Volt per Second --> 150 Square Meter per Volt per Second No Conversion Required
Temperature: 290 Kelvin --> 290 Kelvin No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Dp = μp*(([BoltZ]*T)/[Charge-e]) --> 150*(([BoltZ]*290)/[Charge-e])
Evaluating ... ...
Dp = 3.74853869856121
STEP 3: Convert Result to Output's Unit
3.74853869856121 Square Meter Per Second -->37485.3869856121 Square Centimeter Per Second (Check conversion here)
FINAL ANSWER
37485.3869856121 37485.39 Square Centimeter Per Second <-- Holes Diffusion Constant
(Calculation completed in 00.004 seconds)

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16 Charge Carrier Characteristics Calculators

Intrinsic Concentration
Go Intrinsic Carrier Concentration = sqrt(Effective Density in Valence Band*Effective Density in Conduction Band)*e^((-Temperature Dependence of Energy Band Gap)/(2*[BoltZ]*Temperature))
Electrostatic Deflection Sensitivity of CRT
Go Electrostatic Deflection Sensitivity = (Distance between Deflecting Plates*Screen and Deflecting Plates Distance)/(2*Deflection of Beam*Electron Velocity)
Current Density due to Electrons
Go Electron Current Density = [Charge-e]*Electron Concentration*Mobility of Electron*Electric Field Intensity
Current Density due to Holes
Go Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity
Electrons Diffusion Constant
Go Electron Diffusion Constant = Mobility of Electron*(([BoltZ]*Temperature)/[Charge-e])
Holes Diffusion Constant
Go Holes Diffusion Constant = Mobility of Holes*(([BoltZ]*Temperature)/[Charge-e])
Intrinsic Carrier Concentration under Non-Equilibrium Conditions
Go Intrinsic Carrier Concentration = sqrt(Majority Carrier Concentration*Minority Carrier Concentration)
Force on Current Element in Magnetic Field
Go Force = Current Element*Magnetic Flux Density*sin(Angle between Planes)
Velocity of Electron
Go Velocity due to Voltage = sqrt((2*[Charge-e]*Voltage)/[Mass-e])
Time Period of Electron
Go Period of Particle Circular Path = (2*3.14*[Mass-e])/(Magnetic Field Strength*[Charge-e])
Hole Diffusion Length
Go Holes Diffusion Length = sqrt(Holes Diffusion Constant*Hole Carrier Lifetime)
Conductivity in Metals
Go Conductivity = Electron Concentration*[Charge-e]*Mobility of Electron
Velocity of Electron in Force Fields
Go Velocity of Electron in Force Fields = Electric Field Intensity/Magnetic Field Strength
Thermal Voltage
Go Thermal Voltage = [BoltZ]*Temperature/[Charge-e]
Thermal Voltage using Einstein's Equation
Go Thermal Voltage = Electron Diffusion Constant/Mobility of Electron
Convection Current Density
Go Convection Current Density = Charge Density*Charge Velocity

Holes Diffusion Constant Formula

Holes Diffusion Constant = Mobility of Holes*(([BoltZ]*Temperature)/[Charge-e])
Dp = μp*(([BoltZ]*T)/[Charge-e])

What is the cause of electrical conductivity?

Electrical conductivity in metals is a result of the movement of electrically charged particles. The atoms of metal elements are characterized by the presence of valence electrons, which are electrons in the outer shell of an atom that are free to move about. It is these "free electrons" that allow metals to conduct an electric current.

Because valence electrons are free to move, they can travel through the lattice that forms the physical structure of a metal. Under an electric field, free electrons move through the metal much like billiard balls knocking against each other, passing an electric charge as they move.

How to Calculate Holes Diffusion Constant?

Holes Diffusion Constant calculator uses Holes Diffusion Constant = Mobility of Holes*(([BoltZ]*Temperature)/[Charge-e]) to calculate the Holes Diffusion Constant, Holes Diffusion Constant formula is based on Einstein's Equation which essentially states that the diffusion constant of holes is directly proportional to the product of the mobility of holes and the thermal voltage (kT/q). In simpler terms, it links how quickly particles diffuse through a medium with their ability to move in response to an electric field and the thermal energy present in the system. Holes Diffusion Constant is denoted by Dp symbol.

How to calculate Holes Diffusion Constant using this online calculator? To use this online calculator for Holes Diffusion Constant, enter Mobility of Holes p) & Temperature (T) and hit the calculate button. Here is how the Holes Diffusion Constant calculation can be explained with given input values -> 3.7E+8 = 150*(([BoltZ]*290)/[Charge-e]).

FAQ

What is Holes Diffusion Constant?
Holes Diffusion Constant formula is based on Einstein's Equation which essentially states that the diffusion constant of holes is directly proportional to the product of the mobility of holes and the thermal voltage (kT/q). In simpler terms, it links how quickly particles diffuse through a medium with their ability to move in response to an electric field and the thermal energy present in the system and is represented as Dp = μp*(([BoltZ]*T)/[Charge-e]) or Holes Diffusion Constant = Mobility of Holes*(([BoltZ]*Temperature)/[Charge-e]). Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field & Temperature is the degree or intensity of heat present in a substance or object.
How to calculate Holes Diffusion Constant?
Holes Diffusion Constant formula is based on Einstein's Equation which essentially states that the diffusion constant of holes is directly proportional to the product of the mobility of holes and the thermal voltage (kT/q). In simpler terms, it links how quickly particles diffuse through a medium with their ability to move in response to an electric field and the thermal energy present in the system is calculated using Holes Diffusion Constant = Mobility of Holes*(([BoltZ]*Temperature)/[Charge-e]). To calculate Holes Diffusion Constant, you need Mobility of Holes p) & Temperature (T). With our tool, you need to enter the respective value for Mobility of Holes & Temperature and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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