Hole Diffusion Length Solution

STEP 0: Pre-Calculation Summary
Formula Used
Holes Diffusion Length = sqrt(Holes Diffusion Constant*Hole Carrier Lifetime)
Lp = sqrt(Dp*τp)
This formula uses 1 Functions, 3 Variables
Functions Used
sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)
Variables Used
Holes Diffusion Length - (Measured in Meter) - Holes Diffusion Length refers to the average distance the relevant charge moves in the semiconductor.
Holes Diffusion Constant - (Measured in Square Meter Per Second) - Holes Diffusion Constant refers to a material property that describes the rate at which holes diffuse through the material in response to a concentration gradient.
Hole Carrier Lifetime - (Measured in Second) - Hole Carrier Lifetime refers to the average time that a minority carrier hole exists in the material before recombining with an electron and thereby disappearing.
STEP 1: Convert Input(s) to Base Unit
Holes Diffusion Constant: 37485.39 Square Centimeter Per Second --> 3.748539 Square Meter Per Second (Check conversion ​here)
Hole Carrier Lifetime: 0.035 Second --> 0.035 Second No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Lp = sqrt(Dpp) --> sqrt(3.748539*0.035)
Evaluating ... ...
Lp = 0.362213838774832
STEP 3: Convert Result to Output's Unit
0.362213838774832 Meter --> No Conversion Required
FINAL ANSWER
0.362213838774832 0.362214 Meter <-- Holes Diffusion Length
(Calculation completed in 00.004 seconds)

Credits

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Created by Akshada Kulkarni
National Institute of Information Technology (NIIT), Neemrana
Akshada Kulkarni has created this Calculator and 500+ more calculators!
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16 Charge Carrier Characteristics Calculators

Intrinsic Concentration
​ Go Intrinsic Carrier Concentration = sqrt(Effective Density in Valence Band*Effective Density in Conduction Band)*e^((-Temperature Dependence of Energy Band Gap)/(2*[BoltZ]*Temperature))
Electrostatic Deflection Sensitivity of CRT
​ Go Electrostatic Deflection Sensitivity = (Distance between Deflecting Plates*Screen and Deflecting Plates Distance)/(2*Deflection of Beam*Electron Velocity)
Current Density due to Electrons
​ Go Electron Current Density = [Charge-e]*Electron Concentration*Mobility of Electron*Electric Field Intensity
Current Density due to Holes
​ Go Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity
Electrons Diffusion Constant
​ Go Electron Diffusion Constant = Mobility of Electron*(([BoltZ]*Temperature)/[Charge-e])
Holes Diffusion Constant
​ Go Holes Diffusion Constant = Mobility of Holes*(([BoltZ]*Temperature)/[Charge-e])
Intrinsic Carrier Concentration under Non-Equilibrium Conditions
​ Go Intrinsic Carrier Concentration = sqrt(Majority Carrier Concentration*Minority Carrier Concentration)
Force on Current Element in Magnetic Field
​ Go Force = Current Element*Magnetic Flux Density*sin(Angle between Planes)
Velocity of Electron
​ Go Velocity due to Voltage = sqrt((2*[Charge-e]*Voltage)/[Mass-e])
Time Period of Electron
​ Go Period of Particle Circular Path = (2*3.14*[Mass-e])/(Magnetic Field Strength*[Charge-e])
Hole Diffusion Length
​ Go Holes Diffusion Length = sqrt(Holes Diffusion Constant*Hole Carrier Lifetime)
Conductivity in Metals
​ Go Conductivity = Electron Concentration*[Charge-e]*Mobility of Electron
Velocity of Electron in Force Fields
​ Go Velocity of Electron in Force Fields = Electric Field Intensity/Magnetic Field Strength
Thermal Voltage
​ Go Thermal Voltage = [BoltZ]*Temperature/[Charge-e]
Thermal Voltage using Einstein's Equation
​ Go Thermal Voltage = Electron Diffusion Constant/Mobility of Electron
Convection Current Density
​ Go Convection Current Density = Charge Density*Charge Velocity

Hole Diffusion Length Formula

Holes Diffusion Length = sqrt(Holes Diffusion Constant*Hole Carrier Lifetime)
Lp = sqrt(Dp*τp)

What is the significance of diffusion length?

Carrier diffusion length is a fundamental concept in semiconductor physics and refers to the average distance an excess charge carrier (electron or hole) can travel through a semiconductor material before it recombines with an opposite charge carrier or is otherwise lost. It's a measure of how far carriers can diffuse away from their point of generation.

How to Calculate Hole Diffusion Length?

Hole Diffusion Length calculator uses Holes Diffusion Length = sqrt(Holes Diffusion Constant*Hole Carrier Lifetime) to calculate the Holes Diffusion Length, Hole Diffusion Length is the average distance that a hole can travel through the material before recombining with an electron and thereby disappearing. It is a key parameter that characterizes the performance of p-type semiconductor devices such as solar cells, photodiodes, and transistors. Holes Diffusion Length is denoted by Lp symbol.

How to calculate Hole Diffusion Length using this online calculator? To use this online calculator for Hole Diffusion Length, enter Holes Diffusion Constant (Dp) & Hole Carrier Lifetime p) and hit the calculate button. Here is how the Hole Diffusion Length calculation can be explained with given input values -> 362213.8 = sqrt(3.748539*0.035).

FAQ

What is Hole Diffusion Length?
Hole Diffusion Length is the average distance that a hole can travel through the material before recombining with an electron and thereby disappearing. It is a key parameter that characterizes the performance of p-type semiconductor devices such as solar cells, photodiodes, and transistors and is represented as Lp = sqrt(Dpp) or Holes Diffusion Length = sqrt(Holes Diffusion Constant*Hole Carrier Lifetime). Holes Diffusion Constant refers to a material property that describes the rate at which holes diffuse through the material in response to a concentration gradient & Hole Carrier Lifetime refers to the average time that a minority carrier hole exists in the material before recombining with an electron and thereby disappearing.
How to calculate Hole Diffusion Length?
Hole Diffusion Length is the average distance that a hole can travel through the material before recombining with an electron and thereby disappearing. It is a key parameter that characterizes the performance of p-type semiconductor devices such as solar cells, photodiodes, and transistors is calculated using Holes Diffusion Length = sqrt(Holes Diffusion Constant*Hole Carrier Lifetime). To calculate Hole Diffusion Length, you need Holes Diffusion Constant (Dp) & Hole Carrier Lifetime p). With our tool, you need to enter the respective value for Holes Diffusion Constant & Hole Carrier Lifetime and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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