Current Density due to Holes Solution

STEP 0: Pre-Calculation Summary
Formula Used
Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity
Jp = [Charge-e]*Np*μp*E
This formula uses 1 Constants, 4 Variables
Constants Used
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
Variables Used
Holes Current Density - (Measured in Ampere per Square Meter) - Holes Current Density is defined as the amount of electric current traveling due to holes per unit cross-section area. It is called as current density and expressed in amperes per square meter.
Holes Concentration - (Measured in 1 per Cubic Meter) - Holes Concentration refers to the total number of holes present in a particular area.
Mobility of Holes - (Measured in Square Meter per Volt per Second) - Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field.
Electric Field Intensity - (Measured in Volt per Meter) - Electric Field Intensity refers to the force per unit charge experienced by charged particles (such as electrons or holes) within the material.
STEP 1: Convert Input(s) to Base Unit
Holes Concentration: 2E+16 1 per Cubic Meter --> 2E+16 1 per Cubic Meter No Conversion Required
Mobility of Holes: 150 Square Meter per Volt per Second --> 150 Square Meter per Volt per Second No Conversion Required
Electric Field Intensity: 3.428 Volt per Meter --> 3.428 Volt per Meter No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Jp = [Charge-e]*Npp*E --> [Charge-e]*2E+16*150*3.428
Evaluating ... ...
Jp = 1.647678436008
STEP 3: Convert Result to Output's Unit
1.647678436008 Ampere per Square Meter --> No Conversion Required
FINAL ANSWER
1.647678436008 1.647678 Ampere per Square Meter <-- Holes Current Density
(Calculation completed in 00.004 seconds)

Credits

Created by Akshada Kulkarni
National Institute of Information Technology (NIIT), Neemrana
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16 Charge Carrier Characteristics Calculators

Intrinsic Concentration
Go Intrinsic Carrier Concentration = sqrt(Effective Density in Valence Band*Effective Density in Conduction Band)*e^((-Temperature Dependence of Energy Band Gap)/(2*[BoltZ]*Temperature))
Electrostatic Deflection Sensitivity of CRT
Go Electrostatic Deflection Sensitivity = (Distance between Deflecting Plates*Screen and Deflecting Plates Distance)/(2*Deflection of Beam*Electron Velocity)
Current Density due to Electrons
Go Electron Current Density = [Charge-e]*Electron Concentration*Mobility of Electron*Electric Field Intensity
Current Density due to Holes
Go Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity
Electrons Diffusion Constant
Go Electron Diffusion Constant = Mobility of Electron*(([BoltZ]*Temperature)/[Charge-e])
Holes Diffusion Constant
Go Holes Diffusion Constant = Mobility of Holes*(([BoltZ]*Temperature)/[Charge-e])
Intrinsic Carrier Concentration under Non-Equilibrium Conditions
Go Intrinsic Carrier Concentration = sqrt(Majority Carrier Concentration*Minority Carrier Concentration)
Force on Current Element in Magnetic Field
Go Force = Current Element*Magnetic Flux Density*sin(Angle between Planes)
Velocity of Electron
Go Velocity due to Voltage = sqrt((2*[Charge-e]*Voltage)/[Mass-e])
Time Period of Electron
Go Period of Particle Circular Path = (2*3.14*[Mass-e])/(Magnetic Field Strength*[Charge-e])
Hole Diffusion Length
Go Holes Diffusion Length = sqrt(Holes Diffusion Constant*Hole Carrier Lifetime)
Conductivity in Metals
Go Conductivity = Electron Concentration*[Charge-e]*Mobility of Electron
Velocity of Electron in Force Fields
Go Velocity of Electron in Force Fields = Electric Field Intensity/Magnetic Field Strength
Thermal Voltage
Go Thermal Voltage = [BoltZ]*Temperature/[Charge-e]
Thermal Voltage using Einstein's Equation
Go Thermal Voltage = Electron Diffusion Constant/Mobility of Electron
Convection Current Density
Go Convection Current Density = Charge Density*Charge Velocity

Current Density due to Holes Formula

Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity
Jp = [Charge-e]*Np*μp*E

How is current density in holes different from current density in electrons?

In semiconductor current flows not only due to electrons instead it is due to drift of electrons as well as holes.
Movement of holes is always in opposite to that of corresponding electrons. Holes contribute current to their direction of movement whereas electrons contribute current opposite to their direction of movement. Hence both currents will be in same direction. Electrons involved in causing current in semiconductor, move through conduction band whereas holes causing current in semiconductor move through valance band. That is why mobility of electrons and holes are different in semiconductor.

How to Calculate Current Density due to Holes?

Current Density due to Holes calculator uses Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity to calculate the Holes Current Density, Current Density due to Holes is the current passing through a square centimeter area perpendicular to the direction of flow in a semiconductor. Holes Current Density is denoted by Jp symbol.

How to calculate Current Density due to Holes using this online calculator? To use this online calculator for Current Density due to Holes, enter Holes Concentration (Np), Mobility of Holes p) & Electric Field Intensity (E) and hit the calculate button. Here is how the Current Density due to Holes calculation can be explained with given input values -> 17.78416 = [Charge-e]*2E+16*150*3.428.

FAQ

What is Current Density due to Holes?
Current Density due to Holes is the current passing through a square centimeter area perpendicular to the direction of flow in a semiconductor and is represented as Jp = [Charge-e]*Npp*E or Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity. Holes Concentration refers to the total number of holes present in a particular area, Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field & Electric Field Intensity refers to the force per unit charge experienced by charged particles (such as electrons or holes) within the material.
How to calculate Current Density due to Holes?
Current Density due to Holes is the current passing through a square centimeter area perpendicular to the direction of flow in a semiconductor is calculated using Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity. To calculate Current Density due to Holes, you need Holes Concentration (Np), Mobility of Holes p) & Electric Field Intensity (E). With our tool, you need to enter the respective value for Holes Concentration, Mobility of Holes & Electric Field Intensity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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