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## Conductivity of extrinsic semiconductors for n-type Solution

STEP 0: Pre-Calculation Summary
Formula Used
conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes
σ = Nd*[Charge-e]*µp
This formula uses 2 Constants, 1 Functions, 2 Variables
Constants Used
e - Napier's constant Value Taken As 2.71828182845904523536028747135266249
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
Functions Used
C - Binomial coefficient function, C(n,k)
Variables Used
Donor concentration - Donor concentration is the concentration of electrons in the donor state. (Measured in 1 per Cubic Centimeter)
Mobility of holes - Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field. (Measured in Meter² per Volt Second)
STEP 1: Convert Input(s) to Base Unit
Donor concentration: 1000 1 per Cubic Centimeter --> 1000000000 1 per Cubic Meter (Check conversion here)
Mobility of holes: 20 Meter² per Volt Second --> 20 Meter² per Volt Second No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
σ = Nd*[Charge-e]*µp --> 1000000000*[Charge-e]*20
Evaluating ... ...
σ = 3.20435324E-09
STEP 3: Convert Result to Output's Unit
3.20435324E-09 Siemens per Meter --> No Conversion Required
FINAL ANSWER
3.20435324E-09 Siemens per Meter <-- Conductivity of extrinsic semiconductors (p-type)
(Calculation completed in 00.016 seconds)

## < 10+ Basic Electronics Calculators

Conductivity in semiconductors in terms of mobility of electrons and holes
conductivity = Concentration of electrons in the conduction band*[Charge-e]*Mobility of holes+Majority carrier electron concentration*[Charge-e]*Mobility of electron Go
Intrinsic concentration
intrinsic_carrier_concentration = sqrt(Coefficient related to specific semiconductor*(Temperature)^3*e^-(Semiconductor bandgap energy/(2*[BoltZ]*Temperature))) Go
Conductivity of extrinsic semiconductor for p-type
conductivity_of_extrinsic_semiconductors_n_type = Acceptor concentration*[Charge-e]*Mobility of electron Go
Conductivity of extrinsic semiconductors for n-type
conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes Go
Majority carrier concentration in a Semiconductor
majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration Go
Electron diffusion length in terms of relaxation time
electron_diffusion_length = sqrt(Electron Diffusion Constant*Relaxation time) Go
Conductivity in metals in terms of number of electrons
conductivity = Number of Electrons*Mobility of electron*[Charge-e] Go
Einstein's Equation
voltage_equivalent_of_temperature = Electron Diffusion Constant/Mobility of electron Go
Mobility of a charge carriers
mobility_of_charge_carriers = Drift Velocity/Electric field intensity Go
Thermal Voltage or voltage equivalent of temperature
thermal_voltage = Temperature/11600 Go

### Conductivity of extrinsic semiconductors for n-type Formula

conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes
σ = Nd*[Charge-e]*µp

## Explain conductivity in semiconductors.

Semiconductors are semi-good electrical conductors because although their valence band is completely filled, the energy gap between the valance band and the conduction band is not too large. Hence some electrons can bridge it to become charge carriers. The difference between semiconductors and an insulator is the magnitude of the energy gap. For semiconductors Eg < 2eV and for Insulators Eg > 2eV.It is well known to us that the conductivity of a semiconductor depends on the concentration of free electrons in it

## How to Calculate Conductivity of extrinsic semiconductors for n-type?

Conductivity of extrinsic semiconductors for n-type calculator uses conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes to calculate the Conductivity of extrinsic semiconductors (p-type), The conductivity of extrinsic semiconductors for n-type the conduction band electron and valance band hole participate in electrical conduction. Conductivity of extrinsic semiconductors (p-type) and is denoted by σ symbol.

How to calculate Conductivity of extrinsic semiconductors for n-type using this online calculator? To use this online calculator for Conductivity of extrinsic semiconductors for n-type, enter Donor concentration (Nd) and Mobility of holes p) and hit the calculate button. Here is how the Conductivity of extrinsic semiconductors for n-type calculation can be explained with given input values -> 3.204E-9 = 1000000000*[Charge-e]*20.

### FAQ

What is Conductivity of extrinsic semiconductors for n-type?
The conductivity of extrinsic semiconductors for n-type the conduction band electron and valance band hole participate in electrical conduction and is represented as σ = Nd*[Charge-e]*µp or conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes. Donor concentration is the concentration of electrons in the donor state and Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field.
How to calculate Conductivity of extrinsic semiconductors for n-type?
The conductivity of extrinsic semiconductors for n-type the conduction band electron and valance band hole participate in electrical conduction is calculated using conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes. To calculate Conductivity of extrinsic semiconductors for n-type, you need Donor concentration (Nd) and Mobility of holes p). With our tool, you need to enter the respective value for Donor concentration and Mobility of holes and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Conductivity of extrinsic semiconductors (p-type)?
In this formula, Conductivity of extrinsic semiconductors (p-type) uses Donor concentration and Mobility of holes. We can use 10 other way(s) to calculate the same, which is/are as follows -
• thermal_voltage = Temperature/11600
• mobility_of_charge_carriers = Drift Velocity/Electric field intensity
• majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration
• intrinsic_carrier_concentration = sqrt(Coefficient related to specific semiconductor*(Temperature)^3*e^-(Semiconductor bandgap energy/(2*[BoltZ]*Temperature)))
• voltage_equivalent_of_temperature = Electron Diffusion Constant/Mobility of electron
• electron_diffusion_length = sqrt(Electron Diffusion Constant*Relaxation time)
• conductivity = Number of Electrons*Mobility of electron*[Charge-e]
• conductivity = Concentration of electrons in the conduction band*[Charge-e]*Mobility of holes+Majority carrier electron concentration*[Charge-e]*Mobility of electron
• conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes
• conductivity_of_extrinsic_semiconductors_n_type = Acceptor concentration*[Charge-e]*Mobility of electron
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