Contact Potential Difference Calculator

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✖Absolute Temperature represents the temperature of the system.ⓘ Absolute Temperature [T]			+10% -10%
✖Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.ⓘ Acceptor Concentration [N_A]			+10% -10%
✖Donor Concentration refers to the concentration of donor dopant atoms introduced into a semiconductor material to increase the number of free electrons.ⓘ Donor Concentration [N_D]			+10% -10%
✖Intrinsic Carrier Concentration refers to the concentration of charge carriers, both majority and minority, of an intrinsic semiconductor at thermal equilibrium.ⓘ Intrinsic Carrier Concentration [n1_i]			+10% -10%

✖Voltage Across PN Junction is the built-in potential across the pn junction of a semiconductor without any external bias.ⓘ Contact Potential Difference [V₀]

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Contact Potential Difference

Formula

`"V"_{"0"} = ("[BoltZ]"*"T")/"[Charge-e]"*ln(("N"_{"A"}*"N"_{"D"})/("n1"_{"i"})^2)`

Example

`"0.623837V"=("[BoltZ]"*"393K")/"[Charge-e]"*ln(("1e+22/m³"*"1e+24/m³")/("1e+19/m³")^2)`

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Contact Potential Difference Solution

STEP 0: Pre-Calculation Summary

Formula Used

Voltage Across PN Junction = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Carrier Concentration)^2)
V₀ = ([BoltZ]*T)/[Charge-e]*ln((N_A*N_D)/(n1_i)^2)
This formula uses 2 Constants, 1 Functions, 5 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23

Functions Used

ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)

Variables Used

Voltage Across PN Junction - (Measured in Volt) - Voltage Across PN Junction is the built-in potential across the pn junction of a semiconductor without any external bias.
Absolute Temperature - (Measured in Kelvin) - Absolute Temperature represents the temperature of the system.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.
Donor Concentration - (Measured in 1 per Cubic Meter) - Donor Concentration refers to the concentration of donor dopant atoms introduced into a semiconductor material to increase the number of free electrons.
Intrinsic Carrier Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Carrier Concentration refers to the concentration of charge carriers, both majority and minority, of an intrinsic semiconductor at thermal equilibrium.

STEP 1: Convert Input(s) to Base Unit

Absolute Temperature: 393 Kelvin --> 393 Kelvin No Conversion Required
Acceptor Concentration: 1E+22 1 per Cubic Meter --> 1E+22 1 per Cubic Meter No Conversion Required
Donor Concentration: 1E+24 1 per Cubic Meter --> 1E+24 1 per Cubic Meter No Conversion Required
Intrinsic Carrier Concentration: 1E+19 1 per Cubic Meter --> 1E+19 1 per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V₀ = ([BoltZ]*T)/[Charge-e]*ln((N_A*N_D)/(n1_i)^2) --> ([BoltZ]*393)/[Charge-e]*ln((1E+22*1E+24)/(1E+19)^2)

Evaluating ... ...

V₀ = 0.623836767969216

STEP 3: Convert Result to Output's Unit

0.623836767969216 Volt --> No Conversion Required

FINAL ANSWER

0.623836767969216 ≈ 0.623837 Volt <-- Voltage Across PN Junction

(Calculation completed in 00.020 seconds)

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Home » Engineering » Electronics » Opto Electronics Devices » Photonics Devices » Contact Potential Difference

Credits

Created by Priyanka G Chalikar

The National Institute Of Engineering (NIE), Mysuru

Priyanka G Chalikar has created this Calculator and 10+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

Santhosh Yadav has verified this Calculator and 50+ more calculators!

< 13 Photonics Devices Calculators

Saturation Current Density

Go Saturation Current Density = [Charge-e]*((Diffusion Coefficient of Hole)/Diffusion Length of Hole*Hole Concentration in n-Region+(Electron Diffusion Coefficient)/Diffusion Length of Electron*Electron Concentration in p-Region)

Spectral Radiant Emittance

Go Spectral Radiant Emittance = (2*pi*[hP]*[c]^3)/Wavelength of Visible Light^5*1/(exp(([hP]*[c])/(Wavelength of Visible Light*[BoltZ]*Absolute Temperature))-1)

Contact Potential Difference

Go Voltage Across PN Junction = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Carrier Concentration)^2)

Energy Density given Einstein Co-Efficients

Go Energy Density = (8*[hP]*Frequency of Radiation^3)/[c]^3*(1/(exp((Planck's Constant*Frequency of Radiation)/([BoltZ]*Temperature))-1))

Proton Concentration under Unbalanced Condition

Go Proton Concentration = Intrinsic Electron Concentration*exp((Intrinsic Energy Level of Semiconductor-Quasi Fermi Level of Electrons)/([BoltZ]*Absolute Temperature))

Total Current Density

Go Total Current Density = Saturation Current Density*(exp(([Charge-e]*Voltage Across PN Junction)/([BoltZ]*Absolute Temperature))-1)

Net Phase Shift

Go Net Phase Shift = pi/Wavelength of Light*(Refractive Index)^3*Length of Fiber*Supply Voltage

Relative Population

Go Relative Population = exp(-([hP]*Relative Frequency)/([BoltZ]*Absolute Temperature))

Optical Power Radiated

Go Optical Power Radiated = Emissivity*[Stefan-BoltZ]*Area of Source*Temperature^4

Mode Number

Go Mode Number = (2*Length of Cavity*Refractive Index)/Photon Wavelength

Wavelength of Radiation in Vaccum

Go Wavelength of Wave = Apex Angle*(180/pi)*2*Single Pinhole

Wavelength of Output Light

Go Wavelength of Light = Refractive Index*Photon Wavelength

Length of Cavity

Go Length of Cavity = (Photon Wavelength*Mode Number)/2

Contact Potential Difference Formula

What does the Contact Potential depend on?

The magnitude of the contact potential depends on the temperature and the doping levels and the value of the intrinsic carrier concentration.

How to Calculate Contact Potential Difference?

Contact Potential Difference calculator uses Voltage Across PN Junction = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Carrier Concentration)^2) to calculate the Voltage Across PN Junction, The Contact Potential Difference formula is defined as the voltage that exists across an unbiased pn junction. The contact potential is established across the space charge region, which is also referred to as the transition or depletion region. It is also called as diffusion potential or built-in junction potential. Voltage Across PN Junction is denoted by V₀ symbol.

How to calculate Contact Potential Difference using this online calculator? To use this online calculator for Contact Potential Difference, enter Absolute Temperature (T), Acceptor Concentration (N_A), Donor Concentration (N_D) & Intrinsic Carrier Concentration (n1_i) and hit the calculate button. Here is how the Contact Potential Difference calculation can be explained with given input values -> 0.623837 = ([BoltZ]*393)/[Charge-e]*ln((1E+22*1E+24)/(1E+19)^2).

FAQ

What is Contact Potential Difference?

The Contact Potential Difference formula is defined as the voltage that exists across an unbiased pn junction. The contact potential is established across the space charge region, which is also referred to as the transition or depletion region. It is also called as diffusion potential or built-in junction potential and is represented as V₀ = ([BoltZ]*T)/[Charge-e]*ln((N_A*N_D)/(n1_i)^2) or Voltage Across PN Junction = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Carrier Concentration)^2). Absolute Temperature represents the temperature of the system, Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material, Donor Concentration refers to the concentration of donor dopant atoms introduced into a semiconductor material to increase the number of free electrons & Intrinsic Carrier Concentration refers to the concentration of charge carriers, both majority and minority, of an intrinsic semiconductor at thermal equilibrium.

How to calculate Contact Potential Difference?

The Contact Potential Difference formula is defined as the voltage that exists across an unbiased pn junction. The contact potential is established across the space charge region, which is also referred to as the transition or depletion region. It is also called as diffusion potential or built-in junction potential is calculated using Voltage Across PN Junction = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Carrier Concentration)^2). To calculate Contact Potential Difference, you need Absolute Temperature (T), Acceptor Concentration (N_A), Donor Concentration (N_D) & Intrinsic Carrier Concentration (n1_i). With our tool, you need to enter the respective value for Absolute Temperature, Acceptor Concentration, Donor Concentration & Intrinsic Carrier Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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