Payal Priya
Birsa Institute of Technology (BIT), Sindri
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Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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11 Other formulas that you can solve using the same Inputs

Conductance of channel of MOSFET when Vgs is given
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage) GO
Current flowing through the induced channel in the transistor when Vgs is given
output current =(Mobility of electron*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage))*Saturation voltage between drain and source GO
MOSFET as linear resistance when Vgs is given
MOSFET as linear resistance=Length of the Channel/((Mobility of electrons at the surface of channel*Oxide Capacitance*Width of the Channel)*(Voltage across the oxide-Threshold voltage)) GO
Drain current
Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source GO
Conductance of channel of MOSFETs
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Voltage across the oxide GO
MOSFET transconductance parameter
MOSFET transconductance parameter=Mobility of electrons at the surface of channel*Oxide Capacitance*Aspect Ratio GO
Saturation voltage between drain and source
Saturation voltage between drain and source=Gate to source voltage-Threshold voltage GO
MOSFET transconductance parameter in terms of process transconductance
MOSFET transconductance parameter=Process transconductance parameter*Aspect Ratio GO
Effective voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Overdrive Voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Saturation drain current
Saturation drain current=[BoltZ]*((Gate to source voltage-Threshold voltage)^2) GO

11 Other formulas that calculate the same Output

Current entering drain terminal of MOSFET when Vgs is given
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2))) GO
Current entering drain terminal of MOSFET
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source GO
Drain current in triode region of PMOS transistor
Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-modulus(Threshold voltage))*Voltage between drain and source-1/2*(Voltage between drain and source)^2) GO
Drain current
Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source GO
Current entering drain-source in triode region of NMOS
Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-Threshold voltage)*Voltage between drain and source-1/2*(Voltage between drain and source)^2) GO
Drain current when device parameter is given
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-Threshold voltage)^2*(1+Device parameter*Voltage between drain and source) GO
Current entering drain-source in triode region of NMOS when effective voltage is given
Drain current=Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source GO
Drain current when MOSFET operates as a voltage-controlled current source
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 GO
Drain current without channel-length modulation of MOSFET
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 GO
Drain current when MOSFET operates as a voltage-controlled current source in terms of Vov
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2 GO
Current entering drain-source at boundary of the saturation and triode region of NMOS
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage between drain and source)^2 GO

Current entering drain-source at saturation region of NMOS Formula

Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2
I<sub>d</sub>=1/2*k'<sub>n</sub>*AV*(V<sub>GS</sub> -V<sub>T</sub>)^2
More formulas
Current entering drain-source in triode region of NMOS GO
Current entering drain-source in triode region of NMOS when effective voltage is given GO
Current entering drain-source at saturation region of NMOS when effective voltage is given GO
Current entering drain-source at boundary of the saturation and triode region of NMOS GO

What is saturation region?

The second region is called “saturation”. This is where the base current has increased well beyond the point that the emitter-base junction is forward biased. In fact, the base current has increased beyond the point where it can cause the collector current flow to increase.

What is the condition for an NMOS to be in saturation?

The MOSFET is in saturation when V(GS) > V(TH) and V(DS) > V(GS) - V(TH). ... If I slowly increase the gate voltage starting from 0, the MOSFET remains off. The LED starts conducting a small amount of current when the gate voltage is around 2.5V or so.

How to Calculate Current entering drain-source at saturation region of NMOS?

Current entering drain-source at saturation region of NMOS calculator uses Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 to calculate the Drain current, The Current entering drain-source at saturation region of NMOS, the drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation. Drain current and is denoted by Id symbol.

How to calculate Current entering drain-source at saturation region of NMOS using this online calculator? To use this online calculator for Current entering drain-source at saturation region of NMOS, enter Process transconductance parameter (k'n), Aspect Ratio (AV), Voltage across the oxide (VGS ) and Threshold voltage (VT) and hit the calculate button. Here is how the Current entering drain-source at saturation region of NMOS calculation can be explained with given input values -> 11520 = 1/2*2*5*(2-50)^2.

FAQ

What is Current entering drain-source at saturation region of NMOS?
The Current entering drain-source at saturation region of NMOS, the drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation and is represented as Id=1/2*k'n*AV*(VGS -VT)^2 or Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2. Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance, Aspect Ratio is the ratio of the .width of the channel to the length of the channel, Voltage across the oxide due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide and Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency.
How to calculate Current entering drain-source at saturation region of NMOS?
The Current entering drain-source at saturation region of NMOS, the drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation is calculated using Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2. To calculate Current entering drain-source at saturation region of NMOS, you need Process transconductance parameter (k'n), Aspect Ratio (AV), Voltage across the oxide (VGS ) and Threshold voltage (VT). With our tool, you need to enter the respective value for Process transconductance parameter, Aspect Ratio, Voltage across the oxide and Threshold voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Drain current?
In this formula, Drain current uses Process transconductance parameter, Aspect Ratio, Voltage across the oxide and Threshold voltage. We can use 11 other way(s) to calculate the same, which is/are as follows -
  • Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source
  • Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source
  • Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2)))
  • Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-Threshold voltage)*Voltage between drain and source-1/2*(Voltage between drain and source)^2)
  • Drain current=Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage between drain and source)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-Threshold voltage)^2*(1+Device parameter*Voltage between drain and source)
  • Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2
  • Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-modulus(Threshold voltage))*Voltage between drain and source-1/2*(Voltage between drain and source)^2)
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