Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Calculator

✖The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.ⓘ Process Transconductance Parameter in NMOS [k'_n]			+10% -10%
✖The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.ⓘ Width of Channel [W_c]			+10% -10%
✖Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.ⓘ Length of the Channel [L]			+10% -10%
✖Overdrive voltage in NMOS typically refers to the voltage applied to a device or component that exceeds its normal operating voltage.ⓘ Overdrive Voltage in NMOS [V_ov]			+10% -10%

✖Saturation drain current below threshold voltage is defined as the sub threshold current and varies exponentially with gate to source voltage.ⓘ Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage [I_ds]

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Formula

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Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

Formula

`"I"_{"ds"} = 1/2*"k'"_{"n"}*"W"_{"c"}/"L"*("V"_{"ov"})^2`

Example

`"239.7013mA"=1/2*"2mS"*"10μm"/"3μm"*("8.48V")^2`

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Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Solution

STEP 0: Pre-Calculation Summary

Formula Used

Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2
I_ds = 1/2*k'_n*W_c/L*(V_ov)^2
This formula uses 5 Variables

Variables Used

Saturation Drain Current - (Measured in Ampere) - Saturation drain current below threshold voltage is defined as the sub threshold current and varies exponentially with gate to source voltage.
Process Transconductance Parameter in NMOS - (Measured in Siemens) - The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Width of Channel - (Measured in Meter) - The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.
Length of the Channel - (Measured in Meter) - Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.
Overdrive Voltage in NMOS - (Measured in Volt) - Overdrive voltage in NMOS typically refers to the voltage applied to a device or component that exceeds its normal operating voltage.

STEP 1: Convert Input(s) to Base Unit

Process Transconductance Parameter in NMOS: 2 Millisiemens --> 0.002 Siemens (Check conversion here)
Width of Channel: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Length of the Channel: 3 Micrometer --> 3E-06 Meter (Check conversion here)
Overdrive Voltage in NMOS: 8.48 Volt --> 8.48 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_ds = 1/2*k'_n*W_c/L*(V_ov)^2 --> 1/2*0.002*1E-05/3E-06*(8.48)^2

Evaluating ... ...

I_ds = 0.239701333333333

STEP 3: Convert Result to Output's Unit

0.239701333333333 Ampere -->239.701333333333 Milliampere (Check conversion here)

FINAL ANSWER

239.701333333333 ≈ 239.7013 Milliampere <-- Saturation Drain Current

(Calculation completed in 00.004 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » N-Channel Enhancement » Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

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< 17 N-Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)

Body Effect in NMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Current Entering Drain Terminal of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)

NMOS as Linear Resistance

Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Drain Current when NMOS Operates as Voltage-Controlled Current Source

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Current Entering Drain-Source at Saturation Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Fabrication Process Parameter of NMOS

Go Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2

Electron Drift Velocity of Channel in NMOS Transistor

Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Total Power Supplied in NMOS

Go Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)

Drain Current given NMOS Operates as Voltage-Controlled Current Source

Go Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio

Output Resistance of Current Source NMOS given Drain Current

Go Output Resistance = Device Parameter/Drain Current without Channel Length Modulation

Total Power Dissipated in NMOS

Go Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance

Positive Voltage given Channel Length in NMOS

Go Voltage = Device Parameter*Length of the Channel

Oxide Capacitance of NMOS

Go Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Formula

Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2
I_ds = 1/2*k'_n*W_c/L*(V_ov)^2

What is saturation region?

The second region is called “saturation”. This is where the base current has increased well beyond the point that the emitter-base junction is forward biased. In fact, the base current has increased beyond the point where it can cause the collector current flow to increase.

What is the condition for an NMOS to be in saturation?

The MOSFET is in saturation when V(GS) > V(TH) and V(DS) > V(GS) - V(TH). ... If I slowly increase the gate voltage starting from 0, the MOSFET remains off. The LED starts conducting a small amount of current when the gate voltage is around 2.5V or so.

How to Calculate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage?

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage calculator uses Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2 to calculate the Saturation Drain Current, Current entering drain-source at saturation region of NMOS given effective voltage drain current first increases linearly with applied drain-to-source voltage, but then reaches maximum value. A depletion layer located at drain end of gate accommodates additional drain-to-source voltage. This behavior is referred to as drain current saturation. Saturation Drain Current is denoted by I_ds symbol.

How to calculate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage using this online calculator? To use this online calculator for Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage, enter Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L) & Overdrive Voltage in NMOS (V_ov) and hit the calculate button. Here is how the Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage calculation can be explained with given input values -> 239701.3 = 1/2*0.002*1E-05/3E-06*(8.48)^2.

FAQ

What is Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage?

Current entering drain-source at saturation region of NMOS given effective voltage drain current first increases linearly with applied drain-to-source voltage, but then reaches maximum value. A depletion layer located at drain end of gate accommodates additional drain-to-source voltage. This behavior is referred to as drain current saturation and is represented as I_ds = 1/2*k'_n*W_c/L*(V_ov)^2 or Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2. The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor, The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel, Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location & Overdrive voltage in NMOS typically refers to the voltage applied to a device or component that exceeds its normal operating voltage.

How to calculate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage?

Current entering drain-source at saturation region of NMOS given effective voltage drain current first increases linearly with applied drain-to-source voltage, but then reaches maximum value. A depletion layer located at drain end of gate accommodates additional drain-to-source voltage. This behavior is referred to as drain current saturation is calculated using Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2. To calculate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage, you need Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L) & Overdrive Voltage in NMOS (V_ov). With our tool, you need to enter the respective value for Process Transconductance Parameter in NMOS, Width of Channel, Length of the Channel & Overdrive Voltage in NMOS and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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