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## Electrostatic deflection sensitivity in terms of distance between deflecting plates Solution

STEP 0: Pre-Calculation Summary
Formula Used
electrostatic_deflection_sensitivity = Distance between deflecting plates*Distance between screen and deflecting plates/(2*Deflection of Beam*Velocity of electron)
Se = d*L/(2*ɗ*v)
This formula uses 4 Variables
Variables Used
Distance between deflecting plates - Distance between deflecting plates in Cathode ray tube is used to measure the electrostatic deflection as well as its sensitivity. (Measured in Centimeter)
Distance between screen and deflecting plates - Distance between screen and deflecting plates is the distance at which screen and mid of selecting plates are placed (Measured in Centimeter)
Deflection of Beam - Deflection of beam is the degree to which a structural element is displaced under a load (due to its deformation). It may refer to an angle or a distance. (Measured in Inch)
Velocity of electron - The velocity of electron is the speed at which the electron moves in a particular orbit. (Measured in Meter per Second)
STEP 1: Convert Input(s) to Base Unit
Distance between deflecting plates: 25 Centimeter --> 0.25 Meter (Check conversion here)
Distance between screen and deflecting plates: 5 Centimeter --> 0.05 Meter (Check conversion here)
Deflection of Beam: 10 Inch --> 0.254000000001016 Meter (Check conversion here)
Velocity of electron: 20 Meter per Second --> 20 Meter per Second No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Se = d*L/(2*ɗ*v) --> 0.25*0.05/(2*0.254000000001016*20)
Evaluating ... ...
Se = 0.001230314960625
STEP 3: Convert Result to Output's Unit
0.001230314960625 Meter per Volt --> No Conversion Required
FINAL ANSWER
0.001230314960625 Meter per Volt <-- Electrostatic deflection sensitivity
(Calculation completed in 00.070 seconds)

## < 10+ Basic Electronics Calculators

Conductivity in semiconductors in terms of mobility of electrons and holes
conductivity = Concentration of electrons in the conduction band*[Charge-e]*Mobility of holes+Majority carrier electron concentration*[Charge-e]*Mobility of electron Go
Intrinsic concentration
intrinsic_carrier_concentration = sqrt(Coefficient related to specific semiconductor*(Temperature)^3*e^-(Semiconductor bandgap energy/(2*[BoltZ]*Temperature))) Go
Conductivity of extrinsic semiconductor for p-type
conductivity_of_extrinsic_semiconductors_n_type = Acceptor concentration*[Charge-e]*Mobility of electron Go
Conductivity of extrinsic semiconductors for n-type
conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes Go
Majority carrier concentration in a Semiconductor
majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration Go
Electron diffusion length in terms of relaxation time
electron_diffusion_length = sqrt(Electron Diffusion Constant*Relaxation time) Go
Conductivity in metals in terms of number of electrons
conductivity = Number of Electrons*Mobility of electron*[Charge-e] Go
Einstein's Equation
voltage_equivalent_of_temperature = Electron Diffusion Constant/Mobility of electron Go
Mobility of a charge carriers
mobility_of_charge_carriers = Drift Velocity/Electric field intensity Go
Thermal Voltage or voltage equivalent of temperature
thermal_voltage = Temperature/11600 Go

### Electrostatic deflection sensitivity in terms of distance between deflecting plates Formula

electrostatic_deflection_sensitivity = Distance between deflecting plates*Distance between screen and deflecting plates/(2*Deflection of Beam*Velocity of electron)
Se = d*L/(2*ɗ*v)

## Explain working of cathode ray tube.

The cathode ray tube uses deflecting plates for modifying the path of electrons. The electrons after exiting through the electron gun pass through deflecting plates. The CRT uses vertical and horizontal plates for focussing the electron beam. The vertical plate produces an electrical field in the horizontal plane and causes horizontal deflection. The other pair is mounted horizontally and generates an electric field in the vertical plane and causes vertical deflection. These plates allow the beam to pass through the deflecting plates without striking them.

## How to Calculate Electrostatic deflection sensitivity in terms of distance between deflecting plates?

Electrostatic deflection sensitivity in terms of distance between deflecting plates calculator uses electrostatic_deflection_sensitivity = Distance between deflecting plates*Distance between screen and deflecting plates/(2*Deflection of Beam*Velocity of electron) to calculate the Electrostatic deflection sensitivity, Electrostatic deflection sensitivity in terms of distance between deflecting plates is the method of aligning the path of charged particles by applying the electric field between the deflecting plates. Electrostatic deflection sensitivity and is denoted by Se symbol.

How to calculate Electrostatic deflection sensitivity in terms of distance between deflecting plates using this online calculator? To use this online calculator for Electrostatic deflection sensitivity in terms of distance between deflecting plates, enter Distance between deflecting plates (d), Distance between screen and deflecting plates (L), Deflection of Beam (ɗ) and Velocity of electron (v) and hit the calculate button. Here is how the Electrostatic deflection sensitivity in terms of distance between deflecting plates calculation can be explained with given input values -> 0.00123 = 0.25*0.05/(2*0.254000000001016*20).

### FAQ

What is Electrostatic deflection sensitivity in terms of distance between deflecting plates?
Electrostatic deflection sensitivity in terms of distance between deflecting plates is the method of aligning the path of charged particles by applying the electric field between the deflecting plates and is represented as Se = d*L/(2*ɗ*v) or electrostatic_deflection_sensitivity = Distance between deflecting plates*Distance between screen and deflecting plates/(2*Deflection of Beam*Velocity of electron). Distance between deflecting plates in Cathode ray tube is used to measure the electrostatic deflection as well as its sensitivity, Distance between screen and deflecting plates is the distance at which screen and mid of selecting plates are placed, Deflection of beam is the degree to which a structural element is displaced under a load (due to its deformation). It may refer to an angle or a distance and The velocity of electron is the speed at which the electron moves in a particular orbit.
How to calculate Electrostatic deflection sensitivity in terms of distance between deflecting plates?
Electrostatic deflection sensitivity in terms of distance between deflecting plates is the method of aligning the path of charged particles by applying the electric field between the deflecting plates is calculated using electrostatic_deflection_sensitivity = Distance between deflecting plates*Distance between screen and deflecting plates/(2*Deflection of Beam*Velocity of electron). To calculate Electrostatic deflection sensitivity in terms of distance between deflecting plates, you need Distance between deflecting plates (d), Distance between screen and deflecting plates (L), Deflection of Beam (ɗ) and Velocity of electron (v). With our tool, you need to enter the respective value for Distance between deflecting plates, Distance between screen and deflecting plates, Deflection of Beam and Velocity of electron and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Electrostatic deflection sensitivity?
In this formula, Electrostatic deflection sensitivity uses Distance between deflecting plates, Distance between screen and deflecting plates, Deflection of Beam and Velocity of electron. We can use 10 other way(s) to calculate the same, which is/are as follows -
• thermal_voltage = Temperature/11600
• mobility_of_charge_carriers = Drift Velocity/Electric field intensity
• majority_carrier_electron_concentration = (Intrinsic carrier concentration)^2/Minority carrier concentration
• intrinsic_carrier_concentration = sqrt(Coefficient related to specific semiconductor*(Temperature)^3*e^-(Semiconductor bandgap energy/(2*[BoltZ]*Temperature)))
• voltage_equivalent_of_temperature = Electron Diffusion Constant/Mobility of electron
• electron_diffusion_length = sqrt(Electron Diffusion Constant*Relaxation time)
• conductivity = Number of Electrons*Mobility of electron*[Charge-e]
• conductivity = Concentration of electrons in the conduction band*[Charge-e]*Mobility of holes+Majority carrier electron concentration*[Charge-e]*Mobility of electron
• conductivity_of_extrinsic_semiconductors_p_type = Donor concentration*[Charge-e]*Mobility of holes
• conductivity_of_extrinsic_semiconductors_n_type = Acceptor concentration*[Charge-e]*Mobility of electron
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