Instantaneous Drain Current Calculator

✖Transconductance parameter Kn is a measure of the change in current flowing through a transistor in response to a small change in voltage.ⓘ Transconductance Parameter [K_n]			+10% -10%
✖The DC Component of Gate to Source Voltage refers to the voltage applied between the gate and source terminals, which controls the flow of current between the drain and source terminals.ⓘ DC Component of Gate to Source Voltage [V_gsq]			+10% -10%
✖The total voltage in a series circuit is equal to the sum of all the individual voltage drops in the circuit.ⓘ Total Voltage [V_t]			+10% -10%
✖Critical Voltage is the minimum phase to the neutral voltage which glows and appears all along the line conductor.ⓘ Critical Voltage [V_c]			+10% -10%

✖Drain current is the current that flows between the drain and the source terminals of a field-effect transistor (FET), which is a type of transistor commonly used in electronic circuits.ⓘ Instantaneous Drain Current [i_d]

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Formula

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Instantaneous Drain Current

Formula

`"i"_{"d"} = "K"_{"n"}*("V"_{"gsq"}-"V"_{"t"}+"V"_{"c"})^2`

Example

`"4803.726mA"="0.07A/V²"*("10V"-"2V"+"0.284V")^2`

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Instantaneous Drain Current Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current = Transconductance Parameter*(DC Component of Gate to Source Voltage-Total Voltage+Critical Voltage)^2
i_d = K_n*(V_gsq-V_t+V_c)^2
This formula uses 5 Variables

Variables Used

Drain Current - (Measured in Ampere) - Drain current is the current that flows between the drain and the source terminals of a field-effect transistor (FET), which is a type of transistor commonly used in electronic circuits.
Transconductance Parameter - (Measured in Ampere per Square Volt) - Transconductance parameter Kn is a measure of the change in current flowing through a transistor in response to a small change in voltage.
DC Component of Gate to Source Voltage - (Measured in Volt) - The DC Component of Gate to Source Voltage refers to the voltage applied between the gate and source terminals, which controls the flow of current between the drain and source terminals.
Total Voltage - (Measured in Volt) - The total voltage in a series circuit is equal to the sum of all the individual voltage drops in the circuit.
Critical Voltage - (Measured in Volt) - Critical Voltage is the minimum phase to the neutral voltage which glows and appears all along the line conductor.

STEP 1: Convert Input(s) to Base Unit

Transconductance Parameter: 0.07 Ampere per Square Volt --> 0.07 Ampere per Square Volt No Conversion Required
DC Component of Gate to Source Voltage: 10 Volt --> 10 Volt No Conversion Required
Total Voltage: 2 Volt --> 2 Volt No Conversion Required
Critical Voltage: 0.284 Volt --> 0.284 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

i_d = K_n*(V_gsq-V_t+V_c)^2 --> 0.07*(10-2+0.284)^2

Evaluating ... ...

i_d = 4.80372592

STEP 3: Convert Result to Output's Unit

4.80372592 Ampere -->4803.72592 Milliampere (Check conversion here)

FINAL ANSWER

4803.72592 ≈ 4803.726 Milliampere <-- Drain Current

(Calculation completed in 00.004 seconds)

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Vellore Institute of Technology (VIT Vellore), Vellore

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< 12 Current Calculators

Second Drain Current of MOSFET on Large-Signal Operation

Go Drain Current 2 = DC Bias Current/2-DC Bias Current/Overdrive Voltage*Differential Input Signal/2*sqrt(1-(Differential Input Signal)^2/(4*Overdrive Voltage^2))

First Drain Current of MOSFET on Large-Signal Operation

Go Drain Current 1 = DC Bias Current/2+DC Bias Current/Overdrive Voltage*Differential Input Signal/2*sqrt(1-Differential Input Signal^2/(4*Overdrive Voltage^2))

Instantaneous Drain Current

Go Drain Current = Transconductance Parameter*(DC Component of Gate to Source Voltage-Total Voltage+Critical Voltage)^2

Drain Saturation Current of MOSFET

Go Saturation Drain Current = 1/2*Process Transconductance in PMOS*Channel Width/Channel Length*(Effective Voltage)^2

Drain Current without Channel-Length Modulation of MOSFET

Go Drain Current = 1/2*Process Transconductance in PMOS*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)^2

Second Drain Current of MOSFET on Large-Signal Operation given Overdrive Voltage

Go Drain Current 2 = DC Bias Current/2-DC Bias Current/Overdrive Voltage*Differential Input Signal/2

First Drain Current of MOSFET on Large-Signal Operation given Overdrive Voltage

Go Drain Current 1 = DC Bias Current/2+DC Bias Current/Overdrive Voltage*Differential Input Signal/2

Drain Current of MOSFET on Large-Signal Operation given Overdrive Voltage

Go Drain Current = (DC Bias Current/Overdrive Voltage)*(Differential Input Signal/2)

Instantaneous Drain Current with respect to DC Component of Vgs

Go Drain Current = Transconductance Parameter*((Critical Voltage-Total Voltage)^2)

Current in Common-Mode Rejection of MOSFET

Go Total Current = Incremental Signal/((1/Transconductance)+(2*Output Resistance))

Drain Current in Load Line

Go Drain Current = (Supply Voltage-Drain Source Voltage)/Load Resistance

Short Circuit Current of MOSFET

Go Output Current = Transconductance*Gate-Source Voltage

Instantaneous Drain Current Formula

Drain Current = Transconductance Parameter*(DC Component of Gate to Source Voltage-Total Voltage+Critical Voltage)^2
i_d = K_n*(V_gsq-V_t+V_c)^2

Why do we use Instantaneous Drain Current?

Drain current is crucial in determining the performance and efficiency of a semiconductor device, such as a transistor or an integrated circuit.

How to Calculate Instantaneous Drain Current?

Instantaneous Drain Current calculator uses Drain Current = Transconductance Parameter*(DC Component of Gate to Source Voltage-Total Voltage+Critical Voltage)^2 to calculate the Drain Current, The Instantaneous Drain Current formula is the maximum current that flows through a semiconductor device in a very short time, typically less than 1 nanosecond. It is an important parameter in the design and analysis of high-speed electronic circuits . Drain Current is denoted by i_d symbol.

How to calculate Instantaneous Drain Current using this online calculator? To use this online calculator for Instantaneous Drain Current, enter Transconductance Parameter (K_n), DC Component of Gate to Source Voltage (V_gsq), Total Voltage (V_t) & Critical Voltage (V_c) and hit the calculate button. Here is how the Instantaneous Drain Current calculation can be explained with given input values -> 8.2E+6 = 0.07*(10-2+0.284)^2.

FAQ

What is Instantaneous Drain Current?

The Instantaneous Drain Current formula is the maximum current that flows through a semiconductor device in a very short time, typically less than 1 nanosecond. It is an important parameter in the design and analysis of high-speed electronic circuits and is represented as i_d = K_n*(V_gsq-V_t+V_c)^2 or Drain Current = Transconductance Parameter*(DC Component of Gate to Source Voltage-Total Voltage+Critical Voltage)^2. Transconductance parameter Kn is a measure of the change in current flowing through a transistor in response to a small change in voltage, The DC Component of Gate to Source Voltage refers to the voltage applied between the gate and source terminals, which controls the flow of current between the drain and source terminals, The total voltage in a series circuit is equal to the sum of all the individual voltage drops in the circuit & Critical Voltage is the minimum phase to the neutral voltage which glows and appears all along the line conductor.

How to calculate Instantaneous Drain Current?

The Instantaneous Drain Current formula is the maximum current that flows through a semiconductor device in a very short time, typically less than 1 nanosecond. It is an important parameter in the design and analysis of high-speed electronic circuits is calculated using Drain Current = Transconductance Parameter*(DC Component of Gate to Source Voltage-Total Voltage+Critical Voltage)^2. To calculate Instantaneous Drain Current, you need Transconductance Parameter (K_n), DC Component of Gate to Source Voltage (V_gsq), Total Voltage (V_t) & Critical Voltage (V_c). With our tool, you need to enter the respective value for Transconductance Parameter, DC Component of Gate to Source Voltage, Total Voltage & Critical Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Current?

In this formula, Drain Current uses Transconductance Parameter, DC Component of Gate to Source Voltage, Total Voltage & Critical Voltage. We can use 4 other way(s) to calculate the same, which is/are as follows -

Drain Current = (DC Bias Current/Overdrive Voltage)*(Differential Input Signal/2)
Drain Current = 1/2*Process Transconductance in PMOS*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)^2
Drain Current = (Supply Voltage-Drain Source Voltage)/Load Resistance
Drain Current = Transconductance Parameter*((Critical Voltage-Total Voltage)^2)

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