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## Credits

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
Shobhit Dimri has created this Calculator and 500+ more calculators!
Vishwakarma Government Engineering College (VGEC), Ahmedabad
Urvi Rathod has verified this Calculator and 1000+ more calculators!

## Intrinsic Rise Solution

STEP 0: Pre-Calculation Summary
Formula Used
intrinsic_rise = Delay rise-((rise resistance*Capacitance)+(slope rise*delay previous))
Ti = td-((Rrise*C)+(S.R*D.P))
This formula uses 5 Variables
Variables Used
Delay rise- Delay rise the time taken for the output of a gate to change from some value to 1 is called a rise delay
rise resistance- rise resistance is the resistance rise
Capacitance - Capacitance is the ratio of the amount of electric charge stored on a conductor to a difference in electric potential. (Measured in Farad)
slope rise- slope rise is the rise in the slope
delay previous- delay previous is the previous delay
STEP 1: Convert Input(s) to Base Unit
Delay rise: 4 --> No Conversion Required
rise resistance: 8 --> No Conversion Required
slope rise: 14 --> No Conversion Required
delay previous: 8 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ti = td-((Rrise*C)+(S.R*D.P)) --> 4-((8*3)+(14*8))
Evaluating ... ...
Ti = -132
STEP 3: Convert Result to Output's Unit
-132 --> No Conversion Required
-132 <-- intrinsic rise
(Calculation completed in 00.000 seconds)

## < 10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

### Intrinsic Rise Formula

intrinsic_rise = Delay rise-((rise resistance*Capacitance)+(slope rise*delay previous))
Ti = td-((Rrise*C)+(S.R*D.P))

## What Is The Fundamental Difference Between A Mosfet And Bjt?

In MOSFET, current flow is either due to electrons(n-channel MOS) or due to holes(p-channel MOS) - In BJT, we see current due to both the carriers.. electrons and holes. BJT is a current controlled device and MOSFET is a voltage controlled device.

## How to Calculate Intrinsic Rise?

Intrinsic Rise calculator uses intrinsic_rise = Delay rise-((rise resistance*Capacitance)+(slope rise*delay previous)) to calculate the intrinsic rise, The Intrinsic Rise formula is defined as the concentration of the electron rise in the logic gate as the intrinsic. intrinsic rise and is denoted by Ti symbol.

How to calculate Intrinsic Rise using this online calculator? To use this online calculator for Intrinsic Rise, enter Delay rise (td), rise resistance (Rrise), Capacitance (C), slope rise (S.R) and delay previous (D.P) and hit the calculate button. Here is how the Intrinsic Rise calculation can be explained with given input values -> -132 = 4-((8*3)+(14*8)) .

### FAQ

What is Intrinsic Rise?
The Intrinsic Rise formula is defined as the concentration of the electron rise in the logic gate as the intrinsic and is represented as Ti = td-((Rrise*C)+(S.R*D.P)) or intrinsic_rise = Delay rise-((rise resistance*Capacitance)+(slope rise*delay previous)) . Delay rise the time taken for the output of a gate to change from some value to 1 is called a rise delay, rise resistance is the resistance rise, Capacitance is the ratio of the amount of electric charge stored on a conductor to a difference in electric potential, slope rise is the rise in the slope and delay previous is the previous delay.
How to calculate Intrinsic Rise?
The Intrinsic Rise formula is defined as the concentration of the electron rise in the logic gate as the intrinsic is calculated using intrinsic_rise = Delay rise-((rise resistance*Capacitance)+(slope rise*delay previous)) . To calculate Intrinsic Rise, you need Delay rise (td), rise resistance (Rrise), Capacitance (C), slope rise (S.R) and delay previous (D.P). With our tool, you need to enter the respective value for Delay rise, rise resistance, Capacitance, slope rise and delay previous and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate intrinsic rise?
In this formula, intrinsic rise uses Delay rise, rise resistance, Capacitance, slope rise and delay previous. We can use 10 other way(s) to calculate the same, which is/are as follows -
• dynamic_power = Drain Voltage^2*frequency*Capacitance
• drain_voltage = sqrt(dynamic power/frequency*Capacitance)
• static_power = static current*Drain Voltage
• static_current = Static power/Drain Voltage
• channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
• channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
• gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
• threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
• potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
• potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
Where is the Intrinsic Rise calculator used?
Among many, Intrinsic Rise calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList}
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