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## Credits

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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## Length of Source(D) Solution

STEP 0: Pre-Calculation Summary
Formula Used
transition_width = Area Of Source Diffusion/length of source
W = AS/D
This formula uses 2 Variables
Variables Used
Area Of Source Diffusion - Area Of Source Diffusion is the area of source (Measured in Electron Cross Section)
length of source- length of source gate junction
STEP 1: Convert Input(s) to Base Unit
Area Of Source Diffusion: 5 Electron Cross Section --> 3.32623080165773E-28 Square Meter (Check conversion here)
length of source: 3 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
W = AS/D --> 3.32623080165773E-28/3
Evaluating ... ...
W = 1.10874360055258E-28
STEP 3: Convert Result to Output's Unit
1.10874360055258E-28 Meter -->1.10874360055258E-19 Nanometer (Check conversion here)
FINAL ANSWER
1.10874360055258E-19 Nanometer <-- transition width
(Calculation completed in 00.009 seconds)

## < 10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

### Length of Source(D) Formula

transition_width = Area Of Source Diffusion/length of source
W = AS/D

## Mention the capacitive effects formed in a P-N junction?

There are mainly two types of capacitance formed in a PN junction. Diffusion Capacitance: The diffusion capacitance occurs in forward biased condition. Transition capacitance: Transition capacitance occurs in the reverse biased condition.

## How to Calculate Length of Source(D)?

Length of Source(D) calculator uses transition_width = Area Of Source Diffusion/length of source to calculate the transition width, The Length of Source(D) formula is defined as the total length observed at the source junction of the MOSFET. transition width and is denoted by W symbol.

How to calculate Length of Source(D) using this online calculator? To use this online calculator for Length of Source(D), enter Area Of Source Diffusion (AS) and length of source (D) and hit the calculate button. Here is how the Length of Source(D) calculation can be explained with given input values -> 1.109E-19 = 3.32623080165773E-28/3.

### FAQ

What is Length of Source(D)?
The Length of Source(D) formula is defined as the total length observed at the source junction of the MOSFET and is represented as W = AS/D or transition_width = Area Of Source Diffusion/length of source. Area Of Source Diffusion is the area of source and length of source gate junction.
How to calculate Length of Source(D)?
The Length of Source(D) formula is defined as the total length observed at the source junction of the MOSFET is calculated using transition_width = Area Of Source Diffusion/length of source. To calculate Length of Source(D), you need Area Of Source Diffusion (AS) and length of source (D). With our tool, you need to enter the respective value for Area Of Source Diffusion and length of source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate transition width?
In this formula, transition width uses Area Of Source Diffusion and length of source. We can use 10 other way(s) to calculate the same, which is/are as follows -
• dynamic_power = Drain Voltage^2*frequency*Capacitance
• drain_voltage = sqrt(dynamic power/frequency*Capacitance)
• static_power = static current*Drain Voltage
• static_current = Static power/Drain Voltage
• channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
• channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
• gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
• threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
• potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
• potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
Where is the Length of Source(D) calculator used?
Among many, Length of Source(D) calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
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