N-Type Width Calculator

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SSD Junction

Electrons & Holes

Energy Band & Charge Carrier

Semiconductor Carriers

✖Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device.ⓘ Total Acceptor Charge [\|Q\|]			+10% -10%
✖The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.ⓘ Junction Area [A_j]			+10% -10%
✖Acceptor concentration is the concentration an acceptor or dopant atom that when substituted into a semiconductor lattice forms a p-type region.ⓘ Acceptor Concentration [N_a]			+10% -10%

✖Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material.ⓘ N-Type Width [x_no]

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Formula

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N-Type Width

Formula

`"x"_{"no"} = "|Q|"/("A"_{"j"}*"N"_{"a"}*"[Charge-e]") `

Example

`"0.019015μm"="13C"/("5401.3µm²"*"7.9e35/m³"*"[Charge-e]") `

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N-Type Width Solution

STEP 0: Pre-Calculation Summary

Formula Used

Charge Penetration N-type = Total Acceptor Charge/(Junction Area*Acceptor Concentration*[Charge-e])
x_no = |Q|/(A_j*N_a*[Charge-e])
This formula uses 1 Constants, 4 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Variables Used

Charge Penetration N-type - (Measured in Meter) - Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material.
Total Acceptor Charge - (Measured in Coulomb) - Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device.
Junction Area - (Measured in Square Meter) - The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor concentration is the concentration an acceptor or dopant atom that when substituted into a semiconductor lattice forms a p-type region.

STEP 1: Convert Input(s) to Base Unit

Total Acceptor Charge: 13 Coulomb --> 13 Coulomb No Conversion Required
Junction Area: 5401.3 Square Micrometer --> 5.4013E-09 Square Meter (Check conversion here)
Acceptor Concentration: 7.9E+35 1 per Cubic Meter --> 7.9E+35 1 per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

x_no = |Q|/(A_j*N_a*[Charge-e]) --> 13/(5.4013E-09*7.9E+35*[Charge-e])

Evaluating ... ...

x_no = 1.90154922096807E-08

STEP 3: Convert Result to Output's Unit

1.90154922096807E-08 Meter -->0.0190154922096807 Micrometer (Check conversion here)

FINAL ANSWER

0.0190154922096807 ≈ 0.019015 Micrometer <-- Charge Penetration N-type

(Calculation completed in 00.004 seconds)

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< 16 SSD Junction Calculators

Junction Capacitance

Go Junction Capacitance = (Junction Area/2)*sqrt((2*[Charge-e]*Constant Length Offset*Doping Concentration of Base)/(Source Voltage-Source Voltage 1))

Length of P-Side Junction

Go Length of P-Side Junction = (Optical Current/([Charge-e]*Junction Area*Optical Generation Rate))-(Junction Transition Width+Diffusion Length of Transition Region)

Junction Transition Width

Go Junction Transition Width = Charge Penetration N-type*((Acceptor Concentration+Donor Concentration)/Acceptor Concentration)

Series Resistance in P-type

Go Series Resistance in P Junction = ((Source Voltage-Junction Voltage)/Electric Current)-Series Resistance in N Junction

Series Resistance in N-type

Go Series Resistance in N Junction = ((Source Voltage-Junction Voltage)/Electric Current)-Series Resistance in P Junction

Junction Voltage

Go Junction Voltage = Source Voltage-(Series Resistance in P Junction+Series Resistance in N Junction)*Electric Current

Acceptor Concentration

Go Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area)

N-Type Width

Go Charge Penetration N-type = Total Acceptor Charge/(Junction Area*Acceptor Concentration*[Charge-e])

Cross-Sectional Area of Junction

Go Junction Area = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Acceptor Concentration)

Donor Concentration

Go Donor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration P-type*Junction Area)

Total Acceptor Charge

Go Total Acceptor Charge = [Charge-e]*Charge Penetration N-type*Junction Area*Acceptor Concentration

Absorption Coefficient

Go Absorption Coefficient = (-1/Sample Thickness)*ln(Absorbed Power/Incident Power)

Absorbed Power

Go Absorbed Power = Incident Power*exp(-Sample Thickness*Absorption Coefficient)

Net Distribution of Charge

Go Net Distribution = (Donor Concentration-Acceptor Concentration)/Graded Constant

P-N Junction Length

Go Junction Length = Constant Length Offset+Effective Channel Length

Quantum Number

Go Quantum Number = [Coulomb]*Potential Well Length/3.14

N-Type Width Formula

Charge Penetration N-type = Total Acceptor Charge/(Junction Area*Acceptor Concentration*[Charge-e])
x_no = |Q|/(A_j*N_a*[Charge-e])

What is Diffusion and Drift currents?

Drift current depends on the electric field applied, if there is no electric field there is no drift current. Diffusion current occurs even though there is not an electric field applied to the semiconductor.

How to Calculate N-Type Width?

N-Type Width calculator uses Charge Penetration N-type = Total Acceptor Charge/(Junction Area*Acceptor Concentration*[Charge-e]) to calculate the Charge Penetration N-type, The N-type Width formula is defined as a region near the p-n junction where flow of charge carriers (free electrons and holes) is reduced over a given period and finally results. Charge Penetration N-type is denoted by x_no symbol.

How to calculate N-Type Width using this online calculator? To use this online calculator for N-Type Width, enter Total Acceptor Charge (|Q|), Junction Area (A_j) & Acceptor Concentration (N_a) and hit the calculate button. Here is how the N-Type Width calculation can be explained with given input values -> 19015.49 = 13/(5.4013E-09*7.9E+35*[Charge-e]) .

FAQ

What is N-Type Width?

The N-type Width formula is defined as a region near the p-n junction where flow of charge carriers (free electrons and holes) is reduced over a given period and finally results and is represented as x_no = |Q|/(A_j*N_a*[Charge-e]) or Charge Penetration N-type = Total Acceptor Charge/(Junction Area*Acceptor Concentration*[Charge-e]). Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device, The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode & Acceptor concentration is the concentration an acceptor or dopant atom that when substituted into a semiconductor lattice forms a p-type region.

How to calculate N-Type Width?

The N-type Width formula is defined as a region near the p-n junction where flow of charge carriers (free electrons and holes) is reduced over a given period and finally results is calculated using Charge Penetration N-type = Total Acceptor Charge/(Junction Area*Acceptor Concentration*[Charge-e]). To calculate N-Type Width, you need Total Acceptor Charge (|Q|), Junction Area (A_j) & Acceptor Concentration (N_a). With our tool, you need to enter the respective value for Total Acceptor Charge, Junction Area & Acceptor Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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