Optical Generation Rate Calculator

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Energy Band & Charge Carrier

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Semiconductor Carriers

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✖Excess Carrier Concentration is extra of electron present in the carrier concentration.ⓘ Excess Carrier Concentration [δ_n]			+10% -10%
✖Recombination Lifetime the average time it takes an excess minority carrier to recombine.ⓘ Recombination Lifetime [τ_n]			+10% -10%

✖Optical Generation Rate the number of electrons generated at each point in the device due to the absorption of photons.ⓘ Optical Generation Rate [g_op]

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Formula

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Optical Generation Rate

Formula

`"g"_{"op"} = "δ"_{"n"}/"τ"_{"n"}`

Example

`"2.9E^19"="1.049e14/m³"/"3.62e-6s"`

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Optical Generation Rate Solution

STEP 0: Pre-Calculation Summary

Formula Used

Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime
g_op = δ_n/τ_n
This formula uses 3 Variables

Variables Used

Optical Generation Rate - Optical Generation Rate the number of electrons generated at each point in the device due to the absorption of photons.
Excess Carrier Concentration - (Measured in 1 per Cubic Meter) - Excess Carrier Concentration is extra of electron present in the carrier concentration.
Recombination Lifetime - (Measured in Second) - Recombination Lifetime the average time it takes an excess minority carrier to recombine.

STEP 1: Convert Input(s) to Base Unit

Excess Carrier Concentration: 104900000000000 1 per Cubic Meter --> 104900000000000 1 per Cubic Meter No Conversion Required
Recombination Lifetime: 3.62E-06 Second --> 3.62E-06 Second No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

g_op = δ_n/τ_n --> 104900000000000/3.62E-06

Evaluating ... ...

g_op = 2.89779005524862E+19

STEP 3: Convert Result to Output's Unit

2.89779005524862E+19 --> No Conversion Required

FINAL ANSWER

2.89779005524862E+19 ≈ 2.9E+19 <-- Optical Generation Rate

(Calculation completed in 00.004 seconds)

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< 20 Energy Band & Charge Carrier Calculators

Intrinsic Carrier Concentration

Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band) *exp(-Energy Gap/(2*[BoltZ]*Temperature))

Carrier Lifetime

Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))

Energy of Electron given Coulomb's Constant

Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)

Steady State Electron Concentration

Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration

Effective Density of State

Go Effective Density of State in Conduction Band = Electron Concentration in Conduction Band/Fermi Function

Fermi Function

Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band

Concentration in Conduction Band

Go Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function

Effective Density State in Valence Band

Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)

Recombination Lifetime

Go Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1

Concentration of Holes in Valence Band

Go Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)

Thermal Generation Rate

Go Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration ^2)

Distribution Coefficient

Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid

Liquid Concentration

Go Impurity Concentration in Liquid = Impurity Concentration in Solid/Distribution Coefficient

Net Rate of Change in Conduction Band

Go Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)

Excess Carrier Concentration

Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime

Optical Generation Rate

Go Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime

Photoelectron Energy

Go Photoelectron Energy = [hP]*Frequency of Incident Light

Conduction Band Energy

Go Conduction Band Energy = Energy Gap+Valence Band Energy

Valence Band Energy

Go Valence Band Energy = Conduction Band Energy-Energy Gap

Energy Gap

Go Energy Gap = Conduction Band Energy-Valence Band Energy

Optical Generation Rate Formula

Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime
g_op = δ_n/τ_n

What is Quasi-Fermi Level?

A quasi Fermi level is a term used in quantum mechanics and especially in solid state physics for the Fermi level that describes the population of electrons separately in the conduction band and valence band, when their populations are displaced from equilibrium.

How to Calculate Optical Generation Rate?

Optical Generation Rate calculator uses Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime to calculate the Optical Generation Rate, The Optical Generation Rate formula is defined as the number of electrons generated at each point in the device due to the absorption of photons. Optical Generation Rate is denoted by g_op symbol.

How to calculate Optical Generation Rate using this online calculator? To use this online calculator for Optical Generation Rate, enter Excess Carrier Concentration (δ_n) & Recombination Lifetime (τ_n) and hit the calculate button. Here is how the Optical Generation Rate calculation can be explained with given input values -> 2.9E+19 = 104900000000000/3.62E-06.

FAQ

What is Optical Generation Rate?

The Optical Generation Rate formula is defined as the number of electrons generated at each point in the device due to the absorption of photons and is represented as g_op = δ_n/τ_n or Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime. Excess Carrier Concentration is extra of electron present in the carrier concentration & Recombination Lifetime the average time it takes an excess minority carrier to recombine.

How to calculate Optical Generation Rate?

The Optical Generation Rate formula is defined as the number of electrons generated at each point in the device due to the absorption of photons is calculated using Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime. To calculate Optical Generation Rate, you need Excess Carrier Concentration (δ_n) & Recombination Lifetime (τ_n). With our tool, you need to enter the respective value for Excess Carrier Concentration & Recombination Lifetime and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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