Proton Concentration under Unbalanced Condition Calculator

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✖Intrinsic Electron Concentration is the no. of charge carriers in a semiconductor when it is in thermal equilibrium.ⓘ Intrinsic Electron Concentration [n_i]			+10% -10%
✖Intrinsic Energy Level of Semiconductor refers to the energy level associated with electrons in the absence of any impurities or external influences.ⓘ Intrinsic Energy Level of Semiconductor [E_i]			+10% -10%
✖Quasi Fermi Level of Electrons is the effective energy level for electrons in a non-equilibrium condition. It represents the energy up to which electrons are populated.ⓘ Quasi Fermi Level of Electrons [F_n]			+10% -10%
✖Absolute Temperature represents the temperature of the system.ⓘ Absolute Temperature [T]			+10% -10%

✖Proton Concentration refers to the density or abundance of protons in a given material or devices. Protons are subatomic particles found in the nucleus of an atom.ⓘ Proton Concentration under Unbalanced Condition [p_c]

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Proton Concentration under Unbalanced Condition

Formula

`"p"_{"c"} = "n"_{"i"}*exp(("E"_{"i"}-"F"_{"n"})/("[BoltZ]"*"T"))`

Example

`"38.21311electrons/m³"="3.6electrons/m³"*exp(("3.78eV"-"3.7eV")/("[BoltZ]"*"393K"))`

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Proton Concentration under Unbalanced Condition Solution

STEP 0: Pre-Calculation Summary

Formula Used

Proton Concentration = Intrinsic Electron Concentration*exp((Intrinsic Energy Level of Semiconductor-Quasi Fermi Level of Electrons)/([BoltZ]*Absolute Temperature))
p_c = n_i*exp((E_i-F_n)/([BoltZ]*T))
This formula uses 1 Constants, 1 Functions, 5 Variables

Constants Used

[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23

Functions Used

exp - n an exponential function, the value of the function changes by a constant factor for every unit change in the independent variable., exp(Number)

Variables Used

Proton Concentration - (Measured in Electrons per Cubic Meter) - Proton Concentration refers to the density or abundance of protons in a given material or devices. Protons are subatomic particles found in the nucleus of an atom.
Intrinsic Electron Concentration - (Measured in Electrons per Cubic Meter) - Intrinsic Electron Concentration is the no. of charge carriers in a semiconductor when it is in thermal equilibrium.
Intrinsic Energy Level of Semiconductor - (Measured in Joule) - Intrinsic Energy Level of Semiconductor refers to the energy level associated with electrons in the absence of any impurities or external influences.
Quasi Fermi Level of Electrons - (Measured in Joule) - Quasi Fermi Level of Electrons is the effective energy level for electrons in a non-equilibrium condition. It represents the energy up to which electrons are populated.
Absolute Temperature - (Measured in Kelvin) - Absolute Temperature represents the temperature of the system.

STEP 1: Convert Input(s) to Base Unit

Intrinsic Electron Concentration: 3.6 Electrons per Cubic Meter --> 3.6 Electrons per Cubic Meter No Conversion Required
Intrinsic Energy Level of Semiconductor: 3.78 Electron-Volt --> 6.05623030740003E-19 Joule (Check conversion here)
Quasi Fermi Level of Electrons: 3.7 Electron-Volt --> 5.92805612100003E-19 Joule (Check conversion here)
Absolute Temperature: 393 Kelvin --> 393 Kelvin No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

p_c = n_i*exp((E_i-F_n)/([BoltZ]*T)) --> 3.6*exp((6.05623030740003E-19-5.92805612100003E-19)/([BoltZ]*393))

Evaluating ... ...

p_c = 38.2131068309601

STEP 3: Convert Result to Output's Unit

38.2131068309601 Electrons per Cubic Meter --> No Conversion Required

FINAL ANSWER

38.2131068309601 ≈ 38.21311 Electrons per Cubic Meter <-- Proton Concentration

(Calculation completed in 00.004 seconds)

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Created by Gowthaman N

Vellore Institute of Technology (VIT University), Chennai

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Chandigarh University (CU), Punjab

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< 13 Photonics Devices Calculators

Saturation Current Density

Go Saturation Current Density = [Charge-e]*((Diffusion Coefficient of Hole)/Diffusion Length of Hole*Hole Concentration in n-Region+(Electron Diffusion Coefficient)/Diffusion Length of Electron*Electron Concentration in p-Region)

Spectral Radiant Emittance

Go Spectral Radiant Emittance = (2*pi*[hP]*[c]^3)/Wavelength of Visible Light^5*1/(exp(([hP]*[c])/(Wavelength of Visible Light*[BoltZ]*Absolute Temperature))-1)

Contact Potential Difference

Go Voltage Across PN Junction = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Carrier Concentration)^2)

Energy Density given Einstein Co-Efficients

Go Energy Density = (8*[hP]*Frequency of Radiation^3)/[c]^3*(1/(exp((Planck's Constant*Frequency of Radiation)/([BoltZ]*Temperature))-1))

Proton Concentration under Unbalanced Condition

Go Proton Concentration = Intrinsic Electron Concentration*exp((Intrinsic Energy Level of Semiconductor-Quasi Fermi Level of Electrons)/([BoltZ]*Absolute Temperature))

Total Current Density

Go Total Current Density = Saturation Current Density*(exp(([Charge-e]*Voltage Across PN Junction)/([BoltZ]*Absolute Temperature))-1)

Net Phase Shift

Go Net Phase Shift = pi/Wavelength of Light*(Refractive Index)^3*Length of Fiber*Supply Voltage

Relative Population

Go Relative Population = exp(-([hP]*Relative Frequency)/([BoltZ]*Absolute Temperature))

Optical Power Radiated

Go Optical Power Radiated = Emissivity*[Stefan-BoltZ]*Area of Source*Temperature^4

Mode Number

Go Mode Number = (2*Length of Cavity*Refractive Index)/Photon Wavelength

Wavelength of Radiation in Vaccum

Go Wavelength of Wave = Apex Angle*(180/pi)*2*Single Pinhole

Wavelength of Output Light

Go Wavelength of Light = Refractive Index*Photon Wavelength

Length of Cavity

Go Length of Cavity = (Photon Wavelength*Mode Number)/2

Proton Concentration under Unbalanced Condition Formula

How does temperature affect electron concentration in semiconductors?

Temperature influences electron concentration via the exponential term. As temperature rises, electron concentration increases due to heightened thermal energy, impacting the quasi-Fermi level and intrinsic energy.

How to Calculate Proton Concentration under Unbalanced Condition?

Proton Concentration under Unbalanced Condition calculator uses Proton Concentration = Intrinsic Electron Concentration*exp((Intrinsic Energy Level of Semiconductor-Quasi Fermi Level of Electrons)/([BoltZ]*Absolute Temperature)) to calculate the Proton Concentration, Proton Concentration under Unbalanced Condition equation is used to describe the proton concentration in a semiconductor under non-equilibrium conditions, where the electron distribution deviates from the thermal equilibrium distribution. Proton Concentration is denoted by p_c symbol.

How to calculate Proton Concentration under Unbalanced Condition using this online calculator? To use this online calculator for Proton Concentration under Unbalanced Condition, enter Intrinsic Electron Concentration (n_i), Intrinsic Energy Level of Semiconductor (E_i), Quasi Fermi Level of Electrons (F_n) & Absolute Temperature (T) and hit the calculate button. Here is how the Proton Concentration under Unbalanced Condition calculation can be explained with given input values -> 38.21311 = 3.6*exp((6.05623030740003E-19-5.92805612100003E-19)/([BoltZ]*393)).

FAQ

What is Proton Concentration under Unbalanced Condition?

Proton Concentration under Unbalanced Condition equation is used to describe the proton concentration in a semiconductor under non-equilibrium conditions, where the electron distribution deviates from the thermal equilibrium distribution and is represented as p_c = n_i*exp((E_i-F_n)/([BoltZ]*T)) or Proton Concentration = Intrinsic Electron Concentration*exp((Intrinsic Energy Level of Semiconductor-Quasi Fermi Level of Electrons)/([BoltZ]*Absolute Temperature)). Intrinsic Electron Concentration is the no. of charge carriers in a semiconductor when it is in thermal equilibrium, Intrinsic Energy Level of Semiconductor refers to the energy level associated with electrons in the absence of any impurities or external influences, Quasi Fermi Level of Electrons is the effective energy level for electrons in a non-equilibrium condition. It represents the energy up to which electrons are populated & Absolute Temperature represents the temperature of the system.

How to calculate Proton Concentration under Unbalanced Condition?

Proton Concentration under Unbalanced Condition equation is used to describe the proton concentration in a semiconductor under non-equilibrium conditions, where the electron distribution deviates from the thermal equilibrium distribution is calculated using Proton Concentration = Intrinsic Electron Concentration*exp((Intrinsic Energy Level of Semiconductor-Quasi Fermi Level of Electrons)/([BoltZ]*Absolute Temperature)). To calculate Proton Concentration under Unbalanced Condition, you need Intrinsic Electron Concentration (n_i), Intrinsic Energy Level of Semiconductor (E_i), Quasi Fermi Level of Electrons (F_n) & Absolute Temperature (T). With our tool, you need to enter the respective value for Intrinsic Electron Concentration, Intrinsic Energy Level of Semiconductor, Quasi Fermi Level of Electrons & Absolute Temperature and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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