Payal Priya
Birsa Institute of Technology (BIT), Sindri
Payal Priya has created this Calculator and 300+ more calculators!
Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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5 Other formulas that you can solve using the same Inputs

Saturation current when doping concentration is given
Saturation current=Cross-section area of base-emitter junction*[Charge-e]*Electron Diffusivity*(Intrinsic carrier concentration)^2/Width of base*Doping concentration of the base GO
Concentration of electrons injected from emitter to base
Concentration of e- injected from emitter to base=Thermal Equilibrium Value*e^(Voltage across the base–emitter junction/Thermal voltage) GO
Emitter current through minor carrier concentration
Emitter current=Cross-section area of base-emitter junction*[Charge-e]*Electron Diffusivity*(-Thermal Equilibrium Value/Width of base) GO
Pressure P1 when the Resultant is within the Middle Third and Width of Base is Given
pressure 1=((Total downward force on soil/Area of base)*(1+((6*Distance)/Width of base))) GO
Pressure P2 when the Resultant is within the Middle Third and Width of Base is Given
pressure 2=((Total downward force on soil/Area of base)*(1-((6*Distance)/Width of base))) GO

1 Other formulas that calculate the same Output

Saturation current when doping concentration is given
Saturation current=Cross-section area of base-emitter junction*[Charge-e]*Electron Diffusivity*(Intrinsic carrier concentration)^2/Width of base*Doping concentration of the base GO

Saturation current Formula

Saturation current=Cross-section area of base-emitter junction*[Charge-e]*Electron Diffusivity*Thermal Equilibrium Value/Width of base
I<sub>s</sub>=A<sub>E</sub>*[Charge-e]*D<sub>n</sub>*n<sub>po</sub>/L
More formulas
Emitter current through minor carrier concentration GO
Saturation current when doping concentration is given GO
Thermal equilibrium value of minority charge carrier GO
Collector current when saturation current is given GO
Base current when saturation current in DC is given GO
Forced common-emitter current gain GO
Collector to emitter voltage at saturation GO

What is saturation current in transistor?

the transistor will be biased so that the maximum amount of base current is applied, resulting in maximum collector current resulting in the minimum collector-emitter voltage drop which results in the depletion layer being as small as possible and maximum current flowing through the transistor. Therefore the transistor is switched “Fully-ON”.Then we can define the “saturation region” or “ON mode” when using a bipolar transistor as a switch as being, both junctions forward biased, VB > 0.7v and IC = Maximum. For a PNP transistor, the Emitter potential must be positive with respect to the Base.

How to Calculate Saturation current?

Saturation current calculator uses Saturation current=Cross-section area of base-emitter junction*[Charge-e]*Electron Diffusivity*Thermal Equilibrium Value/Width of base to calculate the Saturation current, The Saturation current for a BJT is the point where a further increase in base current will not result in a corresponding increase in collector current. Saturation current and is denoted by Is symbol.

How to calculate Saturation current using this online calculator? To use this online calculator for Saturation current, enter Cross-section area of base-emitter junction (AE), Electron Diffusivity (Dn), Thermal Equilibrium Value (npo) and Width of base (L) and hit the calculate button. Here is how the Saturation current calculation can be explained with given input values -> 1.025E-26 = 0.08*[Charge-e]*8E-05*0.04/4.

FAQ

What is Saturation current?
The Saturation current for a BJT is the point where a further increase in base current will not result in a corresponding increase in collector current and is represented as Is=AE*[Charge-e]*Dn*npo/L or Saturation current=Cross-section area of base-emitter junction*[Charge-e]*Electron Diffusivity*Thermal Equilibrium Value/Width of base. The Cross-section area of base-emitter junction is the width in the direction perpendicular to the page, Electron Diffusivity is the diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (holes and/or electrons), Thermal Equilibrium Value is the value of the thermal equilibrium of the minority-carrier (electron) concentration in the base region and Width of base of the footing of the wall.
How to calculate Saturation current?
The Saturation current for a BJT is the point where a further increase in base current will not result in a corresponding increase in collector current is calculated using Saturation current=Cross-section area of base-emitter junction*[Charge-e]*Electron Diffusivity*Thermal Equilibrium Value/Width of base. To calculate Saturation current, you need Cross-section area of base-emitter junction (AE), Electron Diffusivity (Dn), Thermal Equilibrium Value (npo) and Width of base (L). With our tool, you need to enter the respective value for Cross-section area of base-emitter junction, Electron Diffusivity, Thermal Equilibrium Value and Width of base and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Saturation current?
In this formula, Saturation current uses Cross-section area of base-emitter junction, Electron Diffusivity, Thermal Equilibrium Value and Width of base. We can use 1 other way(s) to calculate the same, which is/are as follows -
  • Saturation current=Cross-section area of base-emitter junction*[Charge-e]*Electron Diffusivity*(Intrinsic carrier concentration)^2/Width of base*Doping concentration of the base
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