Saturation Current Solution

STEP 0: Pre-Calculation Summary
Formula Used
Saturation Current = (Base Emitter Area*[Charge-e]*Electron Diffusivity*Thermal Equilibrium Concentration)/Base Junction Width
isat = (Abe*[Charge-e]*Dn*npo)/wb
This formula uses 1 Constants, 5 Variables
Constants Used
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
Variables Used
Saturation Current - (Measured in Ampere) - Saturation current is the diode leakage current density in the absence of light. It is an important parameter which differentiates one diode from another.
Base Emitter Area - (Measured in Square Meter) - Base Emitter Area is defined as the cross-sectional area of the base emitter junction in an amplifier.
Electron Diffusivity - (Measured in Square Meter Per Second) - Electron Diffusivity is the diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (holes and/or electrons).
Thermal Equilibrium Concentration - (Measured in 1 per Cubic Meter) - Thermal Equilibrium Concentration is defined as the concentration of carriers in an amplifier.
Base Junction Width - (Measured in Meter) - Base Junction Width is the parameter which signifies how wide is the base junction of any analog electronics element.
STEP 1: Convert Input(s) to Base Unit
Base Emitter Area: 0.12 Square Centimeter --> 1.2E-05 Square Meter (Check conversion ​here)
Electron Diffusivity: 0.8 Square Centimeter Per Second --> 8E-05 Square Meter Per Second (Check conversion ​here)
Thermal Equilibrium Concentration: 1E+15 1 per Cubic Centimeter --> 1E+21 1 per Cubic Meter (Check conversion ​here)
Base Junction Width: 0.0085 Centimeter --> 8.5E-05 Meter (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
isat = (Abe*[Charge-e]*Dn*npo)/wb --> (1.2E-05*[Charge-e]*8E-05*1E+21)/8.5E-05
Evaluating ... ...
isat = 0.00180951712376471
STEP 3: Convert Result to Output's Unit
0.00180951712376471 Ampere -->1.80951712376471 Milliampere (Check conversion ​here)
FINAL ANSWER
1.80951712376471 1.809517 Milliampere <-- Saturation Current
(Calculation completed in 00.004 seconds)

Credits

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Created by Payal Priya
Birsa Institute of Technology (BIT), Sindri
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Vishwakarma Government Engineering College (VGEC), Ahmedabad
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21 Amplifier Characteristics Calculators

Base Junction Width of Amplifier
​ Go Base Junction Width = (Base Emitter Area*[Charge-e]*Electron Diffusivity*Thermal Equilibrium Concentration)/Saturation Current
Saturation Current
​ Go Saturation Current = (Base Emitter Area*[Charge-e]*Electron Diffusivity*Thermal Equilibrium Concentration)/Base Junction Width
Differential Voltage in Amplifier
​ Go Differential Input Signal = Output Voltage/((Resistance 4/Resistance 3)*(1+(Resistance 2)/Resistance 1))
Output Voltage for Instrumentation Amplifier
​ Go Output Voltage = (Resistance 4/Resistance 3)*(1+(Resistance 2)/Resistance 1)*Differential Input Signal
Voltage Gain given Load Resistance
​ Go Voltage Gain = Common Base Current Gain*((1/(1/Load Resistance+1/Collector Resistance))/Emitter Resistance)
Load Power of Amplifier
​ Go Load Power = (Positive DC Voltage*Positive DC Current)+(Negative DC Voltage*Negative DC Current)
Signal Voltage of Amplifier
​ Go Signal Voltage = Input Voltage*((Input Resistance+Signal Resistance)/Input Resistance)
Input Voltage of Amplifier
​ Go Input Voltage = (Input Resistance/(Input Resistance+Signal Resistance))*Signal Voltage
Differential Gain of Instrumentation Amplifier
​ Go Differential Mode Gain = (Resistance 4/Resistance 3)*(1+(Resistance 2)/Resistance 1)
Load Resistance with respect to Transconductance
​ Go Load Resistance = -(Output Voltage Gain*(1/Transconductance+Series Resistor))
Output Voltage Gain given Transconductance
​ Go Output Voltage Gain = -(Load Resistance/(1/Transconductance+Series Resistor))
Open-Circuit Transresistance
​ Go Open Circuit Transresistance = Output Voltage/Input Current
Amplifier Power Efficiency
​ Go Power Efficiency Percentage = 100*(Load Power/Input Power)
Current Gain of Amplifier in Decibels
​ Go Current Gain in Decibels = 20*(log10(Current Gain))
Output Voltage of Amplifier
​ Go Output Voltage = Voltage Gain*Input Voltage
Current Gain of Amplifier
​ Go Current Gain = Output Current/Input Current
Voltage Gain of Amplifier
​ Go Voltage Gain = Output Voltage/Input Voltage
Input Voltage at Maximum Power Dissipation
​ Go Input Voltage = (Peak Voltage*pi)/2
Peak Voltage at Maximum Power Dissipation
​ Go Peak Voltage = (2*Input Voltage)/pi
Power Gain of Amplifier
​ Go Power Gain = Load Power/Input Power
Open Circuit Time Constant of Amplifier
​ Go Open Circuit Time Constant = 1/Pole Frequency

Saturation Current Formula

Saturation Current = (Base Emitter Area*[Charge-e]*Electron Diffusivity*Thermal Equilibrium Concentration)/Base Junction Width
isat = (Abe*[Charge-e]*Dn*npo)/wb

Why do we calculate Saturation Current in transistor?

Calculating saturation current in transistors is crucial for understanding their behavior and performance. Saturation current is the current at which the transistor's output voltage is no longer affected by the input current. It represents the maximum current that the transistor can handle without extensively distorting its output.

How to Calculate Saturation Current?

Saturation Current calculator uses Saturation Current = (Base Emitter Area*[Charge-e]*Electron Diffusivity*Thermal Equilibrium Concentration)/Base Junction Width to calculate the Saturation Current, The Saturation current for a BJT is the point where a further increase in base current will not result in a corresponding increase in collector current. Saturation Current is denoted by isat symbol.

How to calculate Saturation Current using this online calculator? To use this online calculator for Saturation Current, enter Base Emitter Area (Abe), Electron Diffusivity (Dn), Thermal Equilibrium Concentration (npo) & Base Junction Width (wb) and hit the calculate button. Here is how the Saturation Current calculation can be explained with given input values -> 1809.517 = (0.12*[Charge-e]*8E-05*1E+15)/8.5E-05.

FAQ

What is Saturation Current?
The Saturation current for a BJT is the point where a further increase in base current will not result in a corresponding increase in collector current and is represented as isat = (Abe*[Charge-e]*Dn*npo)/wb or Saturation Current = (Base Emitter Area*[Charge-e]*Electron Diffusivity*Thermal Equilibrium Concentration)/Base Junction Width. Base Emitter Area is defined as the cross-sectional area of the base emitter junction in an amplifier, Electron Diffusivity is the diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (holes and/or electrons), Thermal Equilibrium Concentration is defined as the concentration of carriers in an amplifier & Base Junction Width is the parameter which signifies how wide is the base junction of any analog electronics element.
How to calculate Saturation Current?
The Saturation current for a BJT is the point where a further increase in base current will not result in a corresponding increase in collector current is calculated using Saturation Current = (Base Emitter Area*[Charge-e]*Electron Diffusivity*Thermal Equilibrium Concentration)/Base Junction Width. To calculate Saturation Current, you need Base Emitter Area (Abe), Electron Diffusivity (Dn), Thermal Equilibrium Concentration (npo) & Base Junction Width (wb). With our tool, you need to enter the respective value for Base Emitter Area, Electron Diffusivity, Thermal Equilibrium Concentration & Base Junction Width and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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