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Signal current in the base Solution

STEP 0: Pre-Calculation Summary
Formula Used
signal_current_in_the_base = (MOSFET Transconductance/Common emitter current gain)*Small Signal
ib = (gm/β)*Vgs
This formula uses 3 Variables
Variables Used
MOSFET Transconductance - MOSFET Transconductance is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage. (Measured in Microsiemens)
Common emitter current gain- Common emitter current gain is highly influenced by two factors: the width of the base region, W, and the relative dopings of the base region and the emitter region.
Small Signal - A small signal is an AC signal (more technically, a signal having zero average value) superimposed on a bias signal (or superimposed on a DC constant signal). (Measured in Volt)
STEP 1: Convert Input(s) to Base Unit
MOSFET Transconductance: 0.25 Microsiemens --> 2.5E-07 Siemens (Check conversion here)
Common emitter current gain: 55 --> No Conversion Required
Small Signal: 3 Volt --> 3 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
ib = (gm/β)*Vgs --> (2.5E-07/55)*3
Evaluating ... ...
ib = 1.36363636363636E-08
STEP 3: Convert Result to Output's Unit
1.36363636363636E-08 Ampere --> No Conversion Required
FINAL ANSWER
1.36363636363636E-08 Ampere <-- Signal current in the base
(Calculation completed in 00.016 seconds)

10+ High-Frequency Response of the MOS Cascode Amplifier Calculators

Effective time-constant of the cascode amplifier
effective_high_frequency_time_constant = (Capacitance gate to source*Signal Resistance)+Capacitance gate to drain*((1+(Transconductance*drain resistance)*Signal Resistance)+drain resistance)+(Drain-body Capacitance+Capacitance gate to source)*drain resistance+(Capacitance+Capacitance gate to drain)*(1/Load resistance+1/Output resistance) Go
Effective time-constant of the MOS cascode amplifier
time_constant = (Signal Resistance*(Capacitance gate to source+Capacitance gate to drain*(1+(Transconductance*drain resistance))))+drain resistance*(Capacitance gate to drain+Drain-body Capacitance+Capacitance gate to source)+(1/Load resistance+1/Output resistance)*(Capacitance+Capacitance gate to drain) Go
Output resistance of the cascode amplifier
resistance_output = Resistance of Secondary winding in primary+Resistance of Primary winding in Secondary+(Transconductance*Resistance of Secondary winding in primary)*Resistance of Primary winding in Secondary Go
3-dB frequency in design insight and trade-off
3_db_frequency = 1/((2*pi)*(Capacitance+Capacitance gate to drain)*(1/Load resistance+1/Output resistance)) Go
Gate to drain resistance in the cascode amplifier
resistance_gate_to_drain = (1+(Transconductance*drain resistance))*Signal Resistance+drain resistance Go
Effective time-constant in design insight and trade-off
time_constant = (Capacitance+Capacitance gate to drain)*(1/Load resistance+1/Output resistance) Go
Unity gain frequency of the MOS cascode amplifier
unity_gain_frequency = Transconductance/((2*pi)*(Capacitance+Capacitance gate to drain)) Go
Signal current in the base
signal_current_in_the_base = (MOSFET Transconductance/Common emitter current gain)*Small Signal Go
Drain resistance in the cascode amplifier
drain_resistance = 1/Finite input resistance+1/Input resistance Go
3-dB frequency of the cascode amplifier
3_db_frequency = 1/(2*pi*Time constant) Go

Signal current in the base Formula

signal_current_in_the_base = (MOSFET Transconductance/Common emitter current gain)*Small Signal
ib = (gm/β)*Vgs

Why base current is weaker than collector current?

The base is much narrower and thinner than collectors, hence the majority of charge carriers are received by collector. Hence, the collector current is greater than the base current.

How to Calculate Signal current in the base?

Signal current in the base calculator uses signal_current_in_the_base = (MOSFET Transconductance/Common emitter current gain)*Small Signal to calculate the Signal current in the base, The signal current in the base is the current flowing through the base at any moment. It is denoted by ib. Signal current in the base and is denoted by ib symbol.

How to calculate Signal current in the base using this online calculator? To use this online calculator for Signal current in the base, enter MOSFET Transconductance (gm), Common emitter current gain (β) and Small Signal (Vgs) and hit the calculate button. Here is how the Signal current in the base calculation can be explained with given input values -> 1.364E-8 = (2.5E-07/55)*3.

FAQ

What is Signal current in the base?
The signal current in the base is the current flowing through the base at any moment. It is denoted by ib and is represented as ib = (gm/β)*Vgs or signal_current_in_the_base = (MOSFET Transconductance/Common emitter current gain)*Small Signal. MOSFET Transconductance is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage, Common emitter current gain is highly influenced by two factors: the width of the base region, W, and the relative dopings of the base region and the emitter region and A small signal is an AC signal (more technically, a signal having zero average value) superimposed on a bias signal (or superimposed on a DC constant signal).
How to calculate Signal current in the base?
The signal current in the base is the current flowing through the base at any moment. It is denoted by ib is calculated using signal_current_in_the_base = (MOSFET Transconductance/Common emitter current gain)*Small Signal. To calculate Signal current in the base, you need MOSFET Transconductance (gm), Common emitter current gain (β) and Small Signal (Vgs). With our tool, you need to enter the respective value for MOSFET Transconductance, Common emitter current gain and Small Signal and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Signal current in the base?
In this formula, Signal current in the base uses MOSFET Transconductance, Common emitter current gain and Small Signal. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • resistance_gate_to_drain = (1+(Transconductance*drain resistance))*Signal Resistance+drain resistance
  • drain_resistance = 1/Finite input resistance+1/Input resistance
  • resistance_output = Resistance of Secondary winding in primary+Resistance of Primary winding in Secondary+(Transconductance*Resistance of Secondary winding in primary)*Resistance of Primary winding in Secondary
  • effective_high_frequency_time_constant = (Capacitance gate to source*Signal Resistance)+Capacitance gate to drain*((1+(Transconductance*drain resistance)*Signal Resistance)+drain resistance)+(Drain-body Capacitance+Capacitance gate to source)*drain resistance+(Capacitance+Capacitance gate to drain)*(1/Load resistance+1/Output resistance)
  • 3_db_frequency = 1/(2*pi*Time constant)
  • time_constant = (Signal Resistance*(Capacitance gate to source+Capacitance gate to drain*(1+(Transconductance*drain resistance))))+drain resistance*(Capacitance gate to drain+Drain-body Capacitance+Capacitance gate to source)+(1/Load resistance+1/Output resistance)*(Capacitance+Capacitance gate to drain)
  • time_constant = (Capacitance+Capacitance gate to drain)*(1/Load resistance+1/Output resistance)
  • 3_db_frequency = 1/((2*pi)*(Capacitance+Capacitance gate to drain)*(1/Load resistance+1/Output resistance))
  • unity_gain_frequency = Transconductance/((2*pi)*(Capacitance+Capacitance gate to drain))
  • signal_current_in_the_base = (MOSFET Transconductance/Common emitter current gain)*Small Signal
Where is the Signal current in the base calculator used?
Among many, Signal current in the base calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList}
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