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Subthreshold leakage through OFF transistors Solution

STEP 0: Pre-Calculation Summary
Formula Used
subthreshold_current = (CMOS Static Power/Drain Voltage)-(gate current+contention current+junction current)
Ist = (Pstatic/vds)-(Igate+Icontention+Ijun)
This formula uses 5 Variables
Variables Used
CMOS Static Power - CMOS Static Power is the static power (Measured in Watt)
Drain Voltage - Drain Voltage is the voltage that falls across the gate-source terminal of the transistor. (Measured in Volt)
gate current - gate current leakage through the gate dielectric (Measured in Ampere)
contention current - contention current is contention current in ratioed circuits (Measured in Ampere)
junction current - junction current is junction leakage from source/drain diffusions (Measured in Ampere)
STEP 1: Convert Input(s) to Base Unit
CMOS Static Power: 6 Watt --> 6 Watt No Conversion Required
Drain Voltage: 8 Volt --> 8 Volt No Conversion Required
gate current: 6 Ampere --> 6 Ampere No Conversion Required
contention current: 9 Ampere --> 9 Ampere No Conversion Required
junction current: 2 Ampere --> 2 Ampere No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ist = (Pstatic/vds)-(Igate+Icontention+Ijun) --> (6/8)-(6+9+2)
Evaluating ... ...
Ist = -16.25
STEP 3: Convert Result to Output's Unit
-16.25 Ampere --> No Conversion Required
FINAL ANSWER
-16.25 Ampere <-- subthreshold current
(Calculation completed in 00.016 seconds)

10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

Subthreshold leakage through OFF transistors Formula

subthreshold_current = (CMOS Static Power/Drain Voltage)-(gate current+contention current+junction current)
Ist = (Pstatic/vds)-(Igate+Icontention+Ijun)

Is MOSFET a current-control device?

The MOSFET, like the FET, is a voltage controlled device. A voltage input to the gate controls the flow of current from source to drain. The gate does not draw a continuous current.

How to Calculate Subthreshold leakage through OFF transistors?

Subthreshold leakage through OFF transistors calculator uses subthreshold_current = (CMOS Static Power/Drain Voltage)-(gate current+contention current+junction current) to calculate the subthreshold current, The Subthreshold leakage through OFF transistors formula is defined as Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. subthreshold current and is denoted by Ist symbol.

How to calculate Subthreshold leakage through OFF transistors using this online calculator? To use this online calculator for Subthreshold leakage through OFF transistors, enter CMOS Static Power (Pstatic), Drain Voltage (vds), gate current (Igate), contention current (Icontention) and junction current (Ijun) and hit the calculate button. Here is how the Subthreshold leakage through OFF transistors calculation can be explained with given input values -> -16.25 = (6/8)-(6+9+2) .

FAQ

What is Subthreshold leakage through OFF transistors?
The Subthreshold leakage through OFF transistors formula is defined as Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage and is represented as Ist = (Pstatic/vds)-(Igate+Icontention+Ijun) or subthreshold_current = (CMOS Static Power/Drain Voltage)-(gate current+contention current+junction current) . CMOS Static Power is the static power, Drain Voltage is the voltage that falls across the gate-source terminal of the transistor, gate current leakage through the gate dielectric, contention current is contention current in ratioed circuits and junction current is junction leakage from source/drain diffusions.
How to calculate Subthreshold leakage through OFF transistors?
The Subthreshold leakage through OFF transistors formula is defined as Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage is calculated using subthreshold_current = (CMOS Static Power/Drain Voltage)-(gate current+contention current+junction current) . To calculate Subthreshold leakage through OFF transistors, you need CMOS Static Power (Pstatic), Drain Voltage (vds), gate current (Igate), contention current (Icontention) and junction current (Ijun). With our tool, you need to enter the respective value for CMOS Static Power, Drain Voltage, gate current, contention current and junction current and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate subthreshold current?
In this formula, subthreshold current uses CMOS Static Power, Drain Voltage, gate current, contention current and junction current. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • dynamic_power = Drain Voltage^2*frequency*Capacitance
  • drain_voltage = sqrt(dynamic power/frequency*Capacitance)
  • static_power = static current*Drain Voltage
  • static_current = Static power/Drain Voltage
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
  • threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
  • potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
  • potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
Where is the Subthreshold leakage through OFF transistors calculator used?
Among many, Subthreshold leakage through OFF transistors calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList}
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