Voltage Gain of FET Solution

STEP 0: Pre-Calculation Summary
Formula Used
Voltage Gain = -Forward Transconductance*Drain Resistance
Av = -Gm*Rdrain
This formula uses 3 Variables
Variables Used
Voltage Gain - (Measured in Volt) - Voltage Gain of a JFET is determined by the transconductance of the JFET and the load resistance. Measure of how much the drain current.
Forward Transconductance - (Measured in Siemens) - Forward Transconductance of a JFET is maximum at zero gate voltage and decreases as the gate voltage increases.
Drain Resistance - (Measured in Ohm) - Drain Resistance of a JFET can be reduced by using a JFET with a wider channel width and length. JFETs with wider channel widths and lengths have lower resistance.
STEP 1: Convert Input(s) to Base Unit
Forward Transconductance: 2564.103 Siemens --> 2564.103 Siemens No Conversion Required
Drain Resistance: 0.12 Ohm --> 0.12 Ohm No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Av = -Gm*Rdrain --> -2564.103*0.12
Evaluating ... ...
Av = -307.69236
STEP 3: Convert Result to Output's Unit
-307.69236 Volt --> No Conversion Required
FINAL ANSWER
-307.69236 Volt <-- Voltage Gain
(Calculation completed in 00.004 seconds)

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Acharya institute of technology (AIT), Bengaluru
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9 FET Calculators

Ohmic Region Drain Current of FET
​ Go Drain Current = Channel Conductance*(Drain to Source Voltage+3/2*((Psi+Gain to Source Voltage-Drain to Source Voltage)^(3/2)-(Psi+Gain to Source Voltage)^(3/2))/((Psi+Pinch OFF Voltage)^(1/2)))
Transconductance of FET
​ Go Forward Transconductance = (2*Drain Current of Zero Bias)/Pinch OFF Voltage*(1-Gain to Source Voltage/Pinch OFF Voltage)
Drain Source Voltage of FET
​ Go Drain to Source Voltage = Supply Voltage at Drain-Drain Current*(Drain Resistance+Source Resistance)
Gate Substrate Capacitance of FET
​ Go Gate Substrate Capacitance = Gate Substrate Capacitance off Time/(1-(Gate Substrate Voltage/Psi))^(1/2)
Drain Current of FET
​ Go Drain Current = Drain Current of Zero Bias*(1-Gain to Source Voltage/Cuttoff Gain to Source Voltage)^2
Gate Source Capacitance of FET
​ Go Gate to Source Capacitance = Gate Source Capacitance off Time/(1-(Gain to Source Voltage/Psi))^(1/3)
Gate Drain Capacitance of FET
​ Go Gate to Drain Capacitance = Gate Drain Capacitance off Time/(1-Gate to Drain Voltage/Psi)^(1/3)
Pinch off Voltage of FET
​ Go Pinch OFF Voltage = Pinch OFF Drain to Source Voltage-Gain to Source Voltage
Voltage Gain of FET
​ Go Voltage Gain = -Forward Transconductance*Drain Resistance

Voltage Gain of FET Formula

Voltage Gain = -Forward Transconductance*Drain Resistance
Av = -Gm*Rdrain

What is Voltage Gain of FET ?

The voltage gain of a Field-Effect Transistor (FET) is a measure of how much the FET amplifies an input voltage when used in an amplifier circuit. It quantifies the increase in output voltage concerning the input voltage and is a crucial parameter in understanding the amplification capability of the FET-based amplifier.

How to Calculate Voltage Gain of FET?

Voltage Gain of FET calculator uses Voltage Gain = -Forward Transconductance*Drain Resistance to calculate the Voltage Gain, Voltage Gain of FET is determined by the transconductance of the FET and the load resistance. The transconductance of a FET is a measure of how much the drain current changes in response to a change in gate voltage. The load resistance is the resistance connected between the drain and the power supply voltage. Voltage Gain is denoted by Av symbol.

How to calculate Voltage Gain of FET using this online calculator? To use this online calculator for Voltage Gain of FET, enter Forward Transconductance (Gm) & Drain Resistance (Rdrain) and hit the calculate button. Here is how the Voltage Gain of FET calculation can be explained with given input values -> -0.002289 = -2564.103*0.12.

FAQ

What is Voltage Gain of FET?
Voltage Gain of FET is determined by the transconductance of the FET and the load resistance. The transconductance of a FET is a measure of how much the drain current changes in response to a change in gate voltage. The load resistance is the resistance connected between the drain and the power supply voltage and is represented as Av = -Gm*Rdrain or Voltage Gain = -Forward Transconductance*Drain Resistance. Forward Transconductance of a JFET is maximum at zero gate voltage and decreases as the gate voltage increases & Drain Resistance of a JFET can be reduced by using a JFET with a wider channel width and length. JFETs with wider channel widths and lengths have lower resistance.
How to calculate Voltage Gain of FET?
Voltage Gain of FET is determined by the transconductance of the FET and the load resistance. The transconductance of a FET is a measure of how much the drain current changes in response to a change in gate voltage. The load resistance is the resistance connected between the drain and the power supply voltage is calculated using Voltage Gain = -Forward Transconductance*Drain Resistance. To calculate Voltage Gain of FET, you need Forward Transconductance (Gm) & Drain Resistance (Rdrain). With our tool, you need to enter the respective value for Forward Transconductance & Drain Resistance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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