Voltage Swing On Bitline Calculator

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✖The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit.ⓘ Positive Voltage [V_dd]			+10% -10%
✖Cell Capacitance is the capacitance of individual cell.ⓘ Cell Capacitance [C_cell]			+10% -10%
✖Bit Capacitance is one bit's Capacitance in cmos vlsi.ⓘ Bit Capacitance [C_bit]			+10% -10%

✖Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation.ⓘ Voltage Swing On Bitline [ΔV]

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Formula

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Voltage Swing On Bitline

Formula

`"ΔV" = ("V"_{"dd"}/2)*"C"_{"cell"}/("C"_{"cell"}+"C"_{"bit"})`

Example

`"0.420163V"=("2.58V"/2)*"5.98pF"/("5.98pF"+"12.38pF")`

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Voltage Swing On Bitline Solution

STEP 0: Pre-Calculation Summary

Formula Used

Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance)
ΔV = (V_dd/2)*C_cell/(C_cell+C_bit)
This formula uses 4 Variables

Variables Used

Voltage Swing on Bitline - (Measured in Volt) - Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation.
Positive Voltage - (Measured in Volt) - The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit.
Cell Capacitance - (Measured in Farad) - Cell Capacitance is the capacitance of individual cell.
Bit Capacitance - (Measured in Farad) - Bit Capacitance is one bit's Capacitance in cmos vlsi.

STEP 1: Convert Input(s) to Base Unit

Positive Voltage: 2.58 Volt --> 2.58 Volt No Conversion Required
Cell Capacitance: 5.98 Picofarad --> 5.98E-12 Farad (Check conversion here)
Bit Capacitance: 12.38 Picofarad --> 1.238E-11 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

ΔV = (V_dd/2)*C_cell/(C_cell+C_bit) --> (2.58/2)*5.98E-12/(5.98E-12+1.238E-11)

Evaluating ... ...

ΔV = 0.42016339869281

STEP 3: Convert Result to Output's Unit

0.42016339869281 Volt --> No Conversion Required

FINAL ANSWER

0.42016339869281 ≈ 0.420163 Volt <-- Voltage Swing on Bitline

(Calculation completed in 00.004 seconds)

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< 19 Array Datapath Subsystem Calculators

Carry-Looker Adder Delay

Go Carry-Looker Adder Delay = Propagation Delay+Group Propagation Delay+((N-Input AND Gate-1)+(K-Input AND Gate-1))*AND-OR Gate Delay+XOR Delay

Multiplexer Delay

Go Multiplexer Delay = (Carry-Skip Adder Delay-(Propagation Delay+(2*(N-Input AND Gate-1)*AND-OR Gate Delay)-XOR Delay))/(K-Input AND Gate-1)

Carry-Skip Adder Delay

Go Carry-Skip Adder Delay = Propagation Delay+2*(N-Input AND Gate-1)*AND-OR Gate Delay+(K-Input AND Gate-1)*Multiplexer Delay+XOR Delay

Carry-Increamentor Adder Delay

Go Carry-Incrementor Adder Delay = Propagation Delay+Group Propagation Delay+(K-Input AND Gate-1)*AND-OR Gate Delay+XOR Delay

Critical Delay in Gates

Go Critical Delay in Gates = Propagation Delay+(N-Input AND Gate+(K-Input AND Gate-2))*AND-OR Gate Delay+Multiplexer Delay

Group Propagation Delay

Go Propagation Delay = Tree Adder Delay-(log2(Absolute Frequency)*AND-OR Gate Delay+XOR Delay)

Tree Adder Delay

Go Tree Adder Delay = Propagation Delay+log2(Absolute Frequency)*AND-OR Gate Delay+XOR Delay

Cell Capacitance

Go Cell Capacitance = (Bit Capacitance*2*Voltage Swing on Bitline)/(Positive Voltage-(Voltage Swing on Bitline*2))

Bit Capacitance

Go Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance

Voltage Swing On Bitline

Go Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance)

Ground Capacitance

Go Ground Capacitance = ((Agressor Voltage*Adjacent Capacitance)/Victim Voltage)-Adjacent Capacitance

'XOR' Delay

Go XOR Delay = Ripple Time-(Propagation Delay+(Gates on Critical Path-1)*AND-OR Gate Delay)

Carry-Ripple Adder Critical Path Delay

Go Ripple Time = Propagation Delay+(Gates on Critical Path-1)*AND-OR Gate Delay+XOR Delay

Area of Memory Containing N Bits

Go Area of Memory Cell = (Area of One Bit Memory Cell*Absolute Frequency)/Array Efficiency

Area of Memory Cell

Go Area of One Bit Memory Cell = (Array Efficiency*Area of Memory Cell)/Absolute Frequency

Array Efficiency

Go Array Efficiency = (Area of One Bit Memory Cell*Absolute Frequency)/Area of Memory Cell

N-Bit Carry-Skip Adder

Go N-bit Carry Skip Adder = N-Input AND Gate*K-Input AND Gate

K-Input 'And' Gate

Go K-Input AND Gate = N-bit Carry Skip Adder/N-Input AND Gate

N-Input 'And' Gate

Go N-Input AND Gate = N-bit Carry Skip Adder/K-Input AND Gate

Voltage Swing On Bitline Formula

Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance)
ΔV = (V_dd/2)*C_cell/(C_cell+C_bit)

What is Dynamic RAMs(DRAMs)?

Dynamic RAMs (DRAMs) store their contents as charge on a capacitor rather than in a feedback loop. Commercial DRAMs are built in specialized processes optimized for dense capacitor structures. They offer a factor of 10–20 greater density (bits/cm2) than high-performance SRAM built in a standard logic process, but they also have much higher latency. The cell is accessed by asserting the wordline to connect the capacitor to the bitline. On a read, the bitline is first precharged to VDD/2. When the wordline rises, the capacitor shares its charge with the bitline, causing a voltage
change that can be sensed. The read disturbs the cell contents at x, so the cell must be rewritten after each read. On a write, the bitline is driven high or low and the voltage is forced onto the capacitor. Some DRAMs drive the wordline to VDDP = VDD + Vt to avoid a degraded level when writing a ‘1.’

How to Calculate Voltage Swing On Bitline?

Voltage Swing On Bitline calculator uses Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance) to calculate the Voltage Swing on Bitline, The Voltage Swing On Bitline formula is defined as Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation. ... The proposed SRAM that stores four bits in one block can achieve a minimum voltage of 0.42 V and a read delay that is 62.6 times lesser than that of the average-8T SRAM based on the 22-nm FinFET technology. Voltage Swing on Bitline is denoted by ΔV symbol.

How to calculate Voltage Swing On Bitline using this online calculator? To use this online calculator for Voltage Swing On Bitline, enter Positive Voltage (V_dd), Cell Capacitance (C_cell) & Bit Capacitance (C_bit) and hit the calculate button. Here is how the Voltage Swing On Bitline calculation can be explained with given input values -> 0.419706 = (2.58/2)*5.98E-12/(5.98E-12+1.238E-11).

FAQ

What is Voltage Swing On Bitline?

The Voltage Swing On Bitline formula is defined as Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation. ... The proposed SRAM that stores four bits in one block can achieve a minimum voltage of 0.42 V and a read delay that is 62.6 times lesser than that of the average-8T SRAM based on the 22-nm FinFET technology and is represented as ΔV = (V_dd/2)*C_cell/(C_cell+C_bit) or Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance). The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit, Cell Capacitance is the capacitance of individual cell & Bit Capacitance is one bit's Capacitance in cmos vlsi.

How to calculate Voltage Swing On Bitline?

The Voltage Swing On Bitline formula is defined as Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation. ... The proposed SRAM that stores four bits in one block can achieve a minimum voltage of 0.42 V and a read delay that is 62.6 times lesser than that of the average-8T SRAM based on the 22-nm FinFET technology is calculated using Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance). To calculate Voltage Swing On Bitline, you need Positive Voltage (V_dd), Cell Capacitance (C_cell) & Bit Capacitance (C_bit). With our tool, you need to enter the respective value for Positive Voltage, Cell Capacitance & Bit Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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