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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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Voltage Swing On Bitline Solution

STEP 0: Pre-Calculation Summary
Formula Used
voltage_swing_on_bitline = Cell Capacitance/(Cell Capacitance+Bit Capacitance)
ΔV = Ccell/(Ccell+Cbit)
This formula uses 2 Variables
Variables Used
Cell Capacitance - Cell Capacitance is the capacitance of individual cell (Measured in Farad)
Bit Capacitance - Bit Capacitance is one bit's Capacitance (Measured in Farad)
STEP 1: Convert Input(s) to Base Unit
Cell Capacitance: 5 Farad --> 5 Farad No Conversion Required
Bit Capacitance: 8 Farad --> 8 Farad No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
ΔV = Ccell/(Ccell+Cbit) --> 5/(5+8)
Evaluating ... ...
ΔV = 0.384615384615385
STEP 3: Convert Result to Output's Unit
0.384615384615385 Volt --> No Conversion Required
FINAL ANSWER
0.384615384615385 Volt <-- Voltage Swing On Bitline
(Calculation completed in 00.118 seconds)

10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

Voltage Swing On Bitline Formula

voltage_swing_on_bitline = Cell Capacitance/(Cell Capacitance+Bit Capacitance)
ΔV = Ccell/(Ccell+Cbit)

What are the limitations in increasing the power supply to reduce delay?

The delay can be reduced by increasing the power supply but if we do so the heating effect comes because of excessive power, to compensate this we have to increase the die size which is not practical.

How to Calculate Voltage Swing On Bitline?

Voltage Swing On Bitline calculator uses voltage_swing_on_bitline = Cell Capacitance/(Cell Capacitance+Bit Capacitance) to calculate the Voltage Swing On Bitline, The Voltage Swing On Bitline formula is defined as Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation. ... The proposed SRAM that stores four bits in one block can achieve a minimum voltage of 0.42 V and a read delay that is 62.6 times lesser than that of the average-8T SRAM based on the 22-nm FinFET technology. Voltage Swing On Bitline and is denoted by ΔV symbol.

How to calculate Voltage Swing On Bitline using this online calculator? To use this online calculator for Voltage Swing On Bitline, enter Cell Capacitance (Ccell) and Bit Capacitance (Cbit) and hit the calculate button. Here is how the Voltage Swing On Bitline calculation can be explained with given input values -> 0.384615 = 5/(5+8).

FAQ

What is Voltage Swing On Bitline?
The Voltage Swing On Bitline formula is defined as Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation. ... The proposed SRAM that stores four bits in one block can achieve a minimum voltage of 0.42 V and a read delay that is 62.6 times lesser than that of the average-8T SRAM based on the 22-nm FinFET technology and is represented as ΔV = Ccell/(Ccell+Cbit) or voltage_swing_on_bitline = Cell Capacitance/(Cell Capacitance+Bit Capacitance). Cell Capacitance is the capacitance of individual cell and Bit Capacitance is one bit's Capacitance.
How to calculate Voltage Swing On Bitline?
The Voltage Swing On Bitline formula is defined as Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation. ... The proposed SRAM that stores four bits in one block can achieve a minimum voltage of 0.42 V and a read delay that is 62.6 times lesser than that of the average-8T SRAM based on the 22-nm FinFET technology is calculated using voltage_swing_on_bitline = Cell Capacitance/(Cell Capacitance+Bit Capacitance). To calculate Voltage Swing On Bitline, you need Cell Capacitance (Ccell) and Bit Capacitance (Cbit). With our tool, you need to enter the respective value for Cell Capacitance and Bit Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Voltage Swing On Bitline?
In this formula, Voltage Swing On Bitline uses Cell Capacitance and Bit Capacitance. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • dynamic_power = Drain Voltage^2*frequency*Capacitance
  • drain_voltage = sqrt(dynamic power/frequency*Capacitance)
  • static_power = static current*Drain Voltage
  • static_current = Static power/Drain Voltage
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
  • threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
  • potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
  • potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
Where is the Voltage Swing On Bitline calculator used?
Among many, Voltage Swing On Bitline calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList}
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