Bit Capacitance Calculator

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✖The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit.ⓘ Positive Voltage [V_dd]			+10% -10%
✖Cell Capacitance is the capacitance of individual cell.ⓘ Cell Capacitance [C_cell]			+10% -10%
✖Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation.ⓘ Voltage Swing on Bitline [ΔV]			+10% -10%

✖Bit Capacitance is one bit's Capacitance in cmos vlsi.ⓘ Bit Capacitance [C_bit]

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Formula

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Bit Capacitance

Formula

`"C"_{"bit"} = (("V"_{"dd"}*"C"_{"cell"})/(2*"ΔV"))-"C"_{"cell"}`

Example

`"12.38714pF"=(("2.58V"*"5.98pF")/(2*"0.42V"))-"5.98pF"`

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Bit Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance
C_bit = ((V_dd*C_cell)/(2*ΔV))-C_cell
This formula uses 4 Variables

Variables Used

Bit Capacitance - (Measured in Farad) - Bit Capacitance is one bit's Capacitance in cmos vlsi.
Positive Voltage - (Measured in Volt) - The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit.
Cell Capacitance - (Measured in Farad) - Cell Capacitance is the capacitance of individual cell.
Voltage Swing on Bitline - (Measured in Volt) - Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation.

STEP 1: Convert Input(s) to Base Unit

Positive Voltage: 2.58 Volt --> 2.58 Volt No Conversion Required
Cell Capacitance: 5.98 Picofarad --> 5.98E-12 Farad (Check conversion here)
Voltage Swing on Bitline: 0.42 Volt --> 0.42 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_bit = ((V_dd*C_cell)/(2*ΔV))-C_cell --> ((2.58*5.98E-12)/(2*0.42))-5.98E-12

Evaluating ... ...

C_bit = 1.23871428571429E-11

STEP 3: Convert Result to Output's Unit

1.23871428571429E-11 Farad -->12.3871428571429 Picofarad (Check conversion here)

FINAL ANSWER

12.3871428571429 ≈ 12.38714 Picofarad <-- Bit Capacitance

(Calculation completed in 00.020 seconds)

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Home » Engineering » Electronics » CMOS Design and Applications » Array Datapath Subsystem » Bit Capacitance

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< 19 Array Datapath Subsystem Calculators

Carry-Looker Adder Delay

Go Carry-Looker Adder Delay = Propagation Delay+Group Propagation Delay+((N-Input AND Gate-1)+(K-Input AND Gate-1))*AND-OR Gate Delay+XOR Delay

Multiplexer Delay

Go Multiplexer Delay = (Carry-Skip Adder Delay-(Propagation Delay+(2*(N-Input AND Gate-1)*AND-OR Gate Delay)-XOR Delay))/(K-Input AND Gate-1)

Carry-Skip Adder Delay

Go Carry-Skip Adder Delay = Propagation Delay+2*(N-Input AND Gate-1)*AND-OR Gate Delay+(K-Input AND Gate-1)*Multiplexer Delay+XOR Delay

Carry-Increamentor Adder Delay

Go Carry-Incrementor Adder Delay = Propagation Delay+Group Propagation Delay+(K-Input AND Gate-1)*AND-OR Gate Delay+XOR Delay

Critical Delay in Gates

Go Critical Delay in Gates = Propagation Delay+(N-Input AND Gate+(K-Input AND Gate-2))*AND-OR Gate Delay+Multiplexer Delay

Group Propagation Delay

Go Propagation Delay = Tree Adder Delay-(log2(Absolute Frequency)*AND-OR Gate Delay+XOR Delay)

Tree Adder Delay

Go Tree Adder Delay = Propagation Delay+log2(Absolute Frequency)*AND-OR Gate Delay+XOR Delay

Cell Capacitance

Go Cell Capacitance = (Bit Capacitance*2*Voltage Swing on Bitline)/(Positive Voltage-(Voltage Swing on Bitline*2))

Bit Capacitance

Go Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance

Voltage Swing On Bitline

Go Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance)

Ground Capacitance

Go Ground Capacitance = ((Agressor Voltage*Adjacent Capacitance)/Victim Voltage)-Adjacent Capacitance

'XOR' Delay

Go XOR Delay = Ripple Time-(Propagation Delay+(Gates on Critical Path-1)*AND-OR Gate Delay)

Carry-Ripple Adder Critical Path Delay

Go Ripple Time = Propagation Delay+(Gates on Critical Path-1)*AND-OR Gate Delay+XOR Delay

Area of Memory Containing N Bits

Go Area of Memory Cell = (Area of One Bit Memory Cell*Absolute Frequency)/Array Efficiency

Area of Memory Cell

Go Area of One Bit Memory Cell = (Array Efficiency*Area of Memory Cell)/Absolute Frequency

Array Efficiency

Go Array Efficiency = (Area of One Bit Memory Cell*Absolute Frequency)/Area of Memory Cell

N-Bit Carry-Skip Adder

Go N-bit Carry Skip Adder = N-Input AND Gate*K-Input AND Gate

K-Input 'And' Gate

Go K-Input AND Gate = N-bit Carry Skip Adder/N-Input AND Gate

N-Input 'And' Gate

Go N-Input AND Gate = N-bit Carry Skip Adder/K-Input AND Gate

Bit Capacitance Formula

Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance
C_bit = ((V_dd*C_cell)/(2*ΔV))-C_cell

How does various capacitances vary in dynamic RAM or DRAM?

The DRAM capacitor Cell must be as physically small as possible to achieve good density. However, the bit line is contacted to many DRAM cells and has a relatively large capacitance C bit. Therefore, the cell capacitance is typically much smaller than the bit line capacitance. A large cell capacitance is important to provide a reasonable voltage swing. It also is necessary to retain the contents of the cell for an acceptably long time and to minimize soft errors.

How to Calculate Bit Capacitance?

Bit Capacitance calculator uses Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance to calculate the Bit Capacitance, The Bit Capacitance formula is represented as CB. It is calculated as the capacitance of the bit line per unit length. Memory cells are etched onto a silicon wafer in an array of columns (bit lines) and rows (word lines). Bit Capacitance is denoted by C_bit symbol.

How to calculate Bit Capacitance using this online calculator? To use this online calculator for Bit Capacitance, enter Positive Voltage (V_dd), Cell Capacitance (C_cell) & Voltage Swing on Bitline (ΔV) and hit the calculate button. Here is how the Bit Capacitance calculation can be explained with given input values -> 1.2E+13 = ((2.58*5.98E-12)/(2*0.42))-5.98E-12.

FAQ

What is Bit Capacitance?

The Bit Capacitance formula is represented as CB. It is calculated as the capacitance of the bit line per unit length. Memory cells are etched onto a silicon wafer in an array of columns (bit lines) and rows (word lines) and is represented as C_bit = ((V_dd*C_cell)/(2*ΔV))-C_cell or Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance. The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit, Cell Capacitance is the capacitance of individual cell & Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation.

How to calculate Bit Capacitance?

The Bit Capacitance formula is represented as CB. It is calculated as the capacitance of the bit line per unit length. Memory cells are etched onto a silicon wafer in an array of columns (bit lines) and rows (word lines) is calculated using Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance. To calculate Bit Capacitance, you need Positive Voltage (V_dd), Cell Capacitance (C_cell) & Voltage Swing on Bitline (ΔV). With our tool, you need to enter the respective value for Positive Voltage, Cell Capacitance & Voltage Swing on Bitline and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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