Payal Priya
Birsa Institute of Technology (BIT), Sindri
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Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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11 Other formulas that you can solve using the same Inputs

Current entering drain terminal of MOSFET when Vgs is given
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2))) GO
Current entering drain terminal of MOSFET
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source GO
Current flowing through the induced channel in the transistor
output current =(Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Effective voltage or overdrive voltage)*Voltage between drain and source GO
Conductance of channel of MOSFET when Vgs is given
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage) GO
MOSFET as linear resistance when aspect ratio is given
MOSFET as linear resistance=Length of the Channel/(Mobility of electrons at the surface of channel*Oxide Capacitance*Width of the Channel*Effective voltage or overdrive voltage) GO
Drain saturation current of MOSFET when Vgs is given
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)^2 GO
Current entering drain terminal of MOSFET at saturation
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2 GO
Drain saturation current of MOSFET
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2 GO
Magnitude of the electron charge in the channel of MOSFET
Electron Charge in channel=Oxide Capacitance*Width of the Channel*Length of the Channel*Effective voltage or overdrive voltage GO
MOSFET transconductance parameter
MOSFET transconductance parameter=Mobility of electrons at the surface of channel*Oxide Capacitance*Aspect Ratio GO
MOSFET transconductance parameter in terms of process transconductance
MOSFET transconductance parameter=Process transconductance parameter*Aspect Ratio GO

6 Other formulas that calculate the same Output

Drain saturation current of MOSFET when Vgs is given
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)^2 GO
Current entering drain terminal of MOSFET at saturation
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2 GO
Drain saturation current of MOSFET
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2 GO
Drain current in the saturation region of PMOS transistor
Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-modulus(Threshold voltage))^2 GO
Drain current in the saturation region of PMOS transistor when V<sub>ov</sub> is given
Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2 GO
Saturation drain current
Saturation drain current=[BoltZ]*((Gate to source voltage-Threshold voltage)^2) GO

Current entering drain-source at saturation region of NMOS when effective voltage is given Formula

Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2
I<sub>ds</sub>=1/2*k'<sub>n</sub>*AV*(V<sub>ov</sub>)^2
More formulas
Current entering drain-source in triode region of NMOS GO
Current entering drain-source in triode region of NMOS when effective voltage is given GO
Current entering drain-source at saturation region of NMOS GO
Current entering drain-source at boundary of the saturation and triode region of NMOS GO

What is saturation region?

The second region is called “saturation”. This is where the base current has increased well beyond the point that the emitter-base junction is forward biased. In fact, the base current has increased beyond the point where it can cause the collector current flow to increase.

What is the condition for an NMOS to be in saturation?

The MOSFET is in saturation when V(GS) > V(TH) and V(DS) > V(GS) - V(TH). ... If I slowly increase the gate voltage starting from 0, the MOSFET remains off. The LED starts conducting a small amount of current when the gate voltage is around 2.5V or so.

How to Calculate Current entering drain-source at saturation region of NMOS when effective voltage is given?

Current entering drain-source at saturation region of NMOS when effective voltage is given calculator uses Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2 to calculate the Saturation drain current, The Current entering drain-source at saturation region of NMOS when effective voltage is given the drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation. Saturation drain current and is denoted by Ids symbol.

How to calculate Current entering drain-source at saturation region of NMOS when effective voltage is given using this online calculator? To use this online calculator for Current entering drain-source at saturation region of NMOS when effective voltage is given, enter Process transconductance parameter (k'n), Aspect Ratio (AV) and Effective voltage or overdrive voltage (Vov) and hit the calculate button. Here is how the Current entering drain-source at saturation region of NMOS when effective voltage is given calculation can be explained with given input values -> 125 = 1/2*2*5*(5)^2.

FAQ

What is Current entering drain-source at saturation region of NMOS when effective voltage is given?
The Current entering drain-source at saturation region of NMOS when effective voltage is given the drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation and is represented as Ids=1/2*k'n*AV*(Vov)^2 or Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2. Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance, Aspect Ratio is the ratio of the .width of the channel to the length of the channel and Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed.
How to calculate Current entering drain-source at saturation region of NMOS when effective voltage is given?
The Current entering drain-source at saturation region of NMOS when effective voltage is given the drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation is calculated using Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2. To calculate Current entering drain-source at saturation region of NMOS when effective voltage is given, you need Process transconductance parameter (k'n), Aspect Ratio (AV) and Effective voltage or overdrive voltage (Vov). With our tool, you need to enter the respective value for Process transconductance parameter, Aspect Ratio and Effective voltage or overdrive voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Saturation drain current?
In this formula, Saturation drain current uses Process transconductance parameter, Aspect Ratio and Effective voltage or overdrive voltage. We can use 6 other way(s) to calculate the same, which is/are as follows -
  • Saturation drain current=[BoltZ]*((Gate to source voltage-Threshold voltage)^2)
  • Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2
  • Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2
  • Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)^2
  • Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-modulus(Threshold voltage))^2
  • Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2
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