Electron Concentration under Unbalanced Condition Calculator

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✖Intrinsic Electron Concentration is the no. of charge carriers in a semiconductor when it is in thermal equilibrium.ⓘ Intrinsic Electron Concentration [n_i]			+10% -10%
✖Quasi Fermi Level of Electrons is the effective energy level for electrons in a non-equilibrium condition. It represents the energy up to which electrons are populated.ⓘ Quasi Fermi Level of Electrons [F_n]			+10% -10%
✖Intrinsic Energy Level of Semiconductor refers to the energy level associated with electrons in the absence of any impurities or external influences.ⓘ Intrinsic Energy Level of Semiconductor [E_i]			+10% -10%
✖Absolute Temperature represents the temperature of the system.ⓘ Absolute Temperature [T]			+10% -10%

✖Electron Concentration refers to the number of electrons per unit volume in a semiconductor under non-equilibrium conditions.ⓘ Electron Concentration under Unbalanced Condition [n_e]

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Electron Concentration under Unbalanced Condition

Formula

`"n"_{"e"} = "n"_{"i"}*exp(("F"_{"n"}-"E"_{"i"})/("[BoltZ]"*"T"))`

Example

`"0.339151electrons/m³"="3.6electrons/m³"*exp(("3.7eV"-"3.78eV")/("[BoltZ]"*"393K"))`

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Electron Concentration under Unbalanced Condition Solution

STEP 0: Pre-Calculation Summary

Formula Used

Electron Concentration = Intrinsic Electron Concentration*exp((Quasi Fermi Level of Electrons-Intrinsic Energy Level of Semiconductor)/([BoltZ]*Absolute Temperature))
n_e = n_i*exp((F_n-E_i)/([BoltZ]*T))
This formula uses 1 Constants, 1 Functions, 5 Variables

Constants Used

[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23

Functions Used

exp - n an exponential function, the value of the function changes by a constant factor for every unit change in the independent variable., exp(Number)

Variables Used

Electron Concentration - (Measured in Electrons per Cubic Meter) - Electron Concentration refers to the number of electrons per unit volume in a semiconductor under non-equilibrium conditions.
Intrinsic Electron Concentration - (Measured in Electrons per Cubic Meter) - Intrinsic Electron Concentration is the no. of charge carriers in a semiconductor when it is in thermal equilibrium.
Quasi Fermi Level of Electrons - (Measured in Joule) - Quasi Fermi Level of Electrons is the effective energy level for electrons in a non-equilibrium condition. It represents the energy up to which electrons are populated.
Intrinsic Energy Level of Semiconductor - (Measured in Joule) - Intrinsic Energy Level of Semiconductor refers to the energy level associated with electrons in the absence of any impurities or external influences.
Absolute Temperature - (Measured in Kelvin) - Absolute Temperature represents the temperature of the system.

STEP 1: Convert Input(s) to Base Unit

Intrinsic Electron Concentration: 3.6 Electrons per Cubic Meter --> 3.6 Electrons per Cubic Meter No Conversion Required
Quasi Fermi Level of Electrons: 3.7 Electron-Volt --> 5.92805612100003E-19 Joule (Check conversion here)
Intrinsic Energy Level of Semiconductor: 3.78 Electron-Volt --> 6.05623030740003E-19 Joule (Check conversion here)
Absolute Temperature: 393 Kelvin --> 393 Kelvin No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

n_e = n_i*exp((F_n-E_i)/([BoltZ]*T)) --> 3.6*exp((5.92805612100003E-19-6.05623030740003E-19)/([BoltZ]*393))

Evaluating ... ...

n_e = 0.33915064947035

STEP 3: Convert Result to Output's Unit

0.33915064947035 Electrons per Cubic Meter --> No Conversion Required

FINAL ANSWER

0.33915064947035 ≈ 0.339151 Electrons per Cubic Meter <-- Electron Concentration

(Calculation completed in 00.004 seconds)

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Created by Gowthaman N

Vellore Institute of Technology (VIT University), Chennai

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Chandigarh University (CU), Punjab

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< 14 Devices with Optical Components Calculators

PN Junction Capacitance

Go Junction Capacitance = PN Junction Area/2*sqrt((2*[Charge-e]*Relative Permittivity*[Permitivity-silicon])/(Voltage Across PN Junction-(Reverse Bias Voltage))*((Acceptor Concentration*Donor Concentration)/(Acceptor Concentration+Donor Concentration)))

Electron Concentration under Unbalanced Condition

Go Electron Concentration = Intrinsic Electron Concentration*exp((Quasi Fermi Level of Electrons-Intrinsic Energy Level of Semiconductor)/([BoltZ]*Absolute Temperature))

Diffusion Length of Transition Region

Go Diffusion Length of Transition Region = Optical Current/(Charge*PN Junction Area*Optical Generation Rate)-(Transition Width+Length of P-Side Junction)

Current Due to Optically Generated Carrier

Go Optical Current = Charge*PN Junction Area*Optical Generation Rate*(Transition Width+Diffusion Length of Transition Region+Length of P-Side Junction)

Peak Retardation

Go Peak Retardation = (2*pi)/Wavelength of Light*Length of Fiber*Refractive Index^3*Modulation Voltage

Maximum Acceptance Angle of Compound Lens

Go Acceptance Angle = asin(Refractive Index of Medium 1*Radius of Lens*sqrt(Positive Constant))

Effective Density of States in Conduction Band

Go Effective Density of States = 2*(2*pi*Effective Mass of Electron*[BoltZ]*Absolute Temperature/[hP]^2)^(3/2)

Diffusion Coefficient of Electron

Go Electron Diffusion Coefficient = Mobility of Electron*[BoltZ]*Absolute Temperature/[Charge-e]

Diffraction using Fresnel-Kirchoff Formula

Go Diffraction Angle = asin(1.22*Wavelength of Visible Light/Diameter of Aperture)

Fringe Spacing given Apex Angle

Go Fringe Space = Wavelength of Visible Light/(2*tan(Angle of Interference))

Excitation Energy

Go Excitation Energy = 1.6*10^-19*13.6*(Effective Mass of Electron/[Mass-e])*(1/[Permitivity-silicon]^2)

Brewsters Angle

Go Brewster's Angle = arctan(Refractive Index of Medium 1/Refractive Index)

Angle of Rotation of Plane of Polarization

Go Angle of Rotation = 1.8*Magnetic Flux Density*Length of Medium

Apex Angle

Go Apex Angle = tan(Alpha)

Electron Concentration under Unbalanced Condition Formula

Why is Fermi Level crucial in describing non-equilibrium electron concentration in semiconductors?

The quasi-Fermi level reflects the effective energy at which electrons are populated in non-equilibrium. In the formula it influences the exponential term, capturing deviations from thermal equilibrium and illustrating the impact of energy levels on electron concentration.

How to Calculate Electron Concentration under Unbalanced Condition?

Electron Concentration under Unbalanced Condition calculator uses Electron Concentration = Intrinsic Electron Concentration*exp((Quasi Fermi Level of Electrons-Intrinsic Energy Level of Semiconductor)/([BoltZ]*Absolute Temperature)) to calculate the Electron Concentration, Electron Concentration under Unbalanced Conditions is used to describe the electron concentration in a semiconductor under non-equilibrium conditions, where the electron distribution deviates from the thermal equilibrium distribution. Electron Concentration is denoted by n_e symbol.

How to calculate Electron Concentration under Unbalanced Condition using this online calculator? To use this online calculator for Electron Concentration under Unbalanced Condition, enter Intrinsic Electron Concentration (n_i), Quasi Fermi Level of Electrons (F_n), Intrinsic Energy Level of Semiconductor (E_i) & Absolute Temperature (T) and hit the calculate button. Here is how the Electron Concentration under Unbalanced Condition calculation can be explained with given input values -> 0.339151 = 3.6*exp((5.92805612100003E-19-6.05623030740003E-19)/([BoltZ]*393)).

FAQ

What is Electron Concentration under Unbalanced Condition?

Electron Concentration under Unbalanced Conditions is used to describe the electron concentration in a semiconductor under non-equilibrium conditions, where the electron distribution deviates from the thermal equilibrium distribution and is represented as n_e = n_i*exp((F_n-E_i)/([BoltZ]*T)) or Electron Concentration = Intrinsic Electron Concentration*exp((Quasi Fermi Level of Electrons-Intrinsic Energy Level of Semiconductor)/([BoltZ]*Absolute Temperature)). Intrinsic Electron Concentration is the no. of charge carriers in a semiconductor when it is in thermal equilibrium, Quasi Fermi Level of Electrons is the effective energy level for electrons in a non-equilibrium condition. It represents the energy up to which electrons are populated, Intrinsic Energy Level of Semiconductor refers to the energy level associated with electrons in the absence of any impurities or external influences & Absolute Temperature represents the temperature of the system.

How to calculate Electron Concentration under Unbalanced Condition?

Electron Concentration under Unbalanced Conditions is used to describe the electron concentration in a semiconductor under non-equilibrium conditions, where the electron distribution deviates from the thermal equilibrium distribution is calculated using Electron Concentration = Intrinsic Electron Concentration*exp((Quasi Fermi Level of Electrons-Intrinsic Energy Level of Semiconductor)/([BoltZ]*Absolute Temperature)). To calculate Electron Concentration under Unbalanced Condition, you need Intrinsic Electron Concentration (n_i), Quasi Fermi Level of Electrons (F_n), Intrinsic Energy Level of Semiconductor (E_i) & Absolute Temperature (T). With our tool, you need to enter the respective value for Intrinsic Electron Concentration, Quasi Fermi Level of Electrons, Intrinsic Energy Level of Semiconductor & Absolute Temperature and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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Electron Concentration under Unbalanced Condition Calculator

Electron Concentration under Unbalanced Condition

Electron Concentration under Unbalanced Condition Solution

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< 14 Devices with Optical Components Calculators

Electron Concentration under Unbalanced Condition Formula

Why is Fermi Level ​crucial in describing non-equilibrium electron concentration in semiconductors?

How to Calculate Electron Concentration under Unbalanced Condition?

FAQ

Why is Fermi Level crucial in describing non-equilibrium electron concentration in semiconductors?