Gate Source Capacitance of FET Calculator

✖Gate Source Capacitance Off Time FET refers to the time required for the gate-to-source capacitance to discharge, a critical parameter for controlling switching speed and power efficiency.ⓘ Gate Source Capacitance Off Time FET [T_gs-off(fet)]			+10% -10%
✖Drain Source Voltage FET is the voltage between the drain and the source terminal of an FET.ⓘ Drain Source Voltage FET [V_ds(fet)]			+10% -10%
✖Surface Potential FET operates based on the surface potential of the semiconductor channel, controlling the flow of current through a gate voltage without generating inversion layers.ⓘ Surface Potential FET [Ψ_0(fet)]			+10% -10%

✖Gate Source Capacitance FET is the capacitance between the gate and source terminals of an FET.ⓘ Gate Source Capacitance of FET [C_gs(fet)]

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Formula

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Gate Source Capacitance of FET

Formula

`"C"_{"gs(fet)"} = "T"_{"gs-off(fet)"}/(1-("V"_{"ds(fet)"}/"Ψ"_{"0(fet)"}))^(1/3)`

Example

`"6.805694F"="2.234s"/(1-("4.8V"/"4.976V"))^(1/3)`

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Gate Source Capacitance of FET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Source Capacitance FET = Gate Source Capacitance Off Time FET/(1-(Drain Source Voltage FET/Surface Potential FET))^(1/3)
C_gs(fet) = T_gs-off(fet)/(1-(V_ds(fet)/Ψ_0(fet)))^(1/3)
This formula uses 4 Variables

Variables Used

Gate Source Capacitance FET - (Measured in Farad) - Gate Source Capacitance FET is the capacitance between the gate and source terminals of an FET.
Gate Source Capacitance Off Time FET - (Measured in Second) - Gate Source Capacitance Off Time FET refers to the time required for the gate-to-source capacitance to discharge, a critical parameter for controlling switching speed and power efficiency.
Drain Source Voltage FET - (Measured in Volt) - Drain Source Voltage FET is the voltage between the drain and the source terminal of an FET.
Surface Potential FET - (Measured in Volt) - Surface Potential FET operates based on the surface potential of the semiconductor channel, controlling the flow of current through a gate voltage without generating inversion layers.

STEP 1: Convert Input(s) to Base Unit

Gate Source Capacitance Off Time FET: 2.234 Second --> 2.234 Second No Conversion Required
Drain Source Voltage FET: 4.8 Volt --> 4.8 Volt No Conversion Required
Surface Potential FET: 4.976 Volt --> 4.976 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_gs(fet) = T_gs-off(fet)/(1-(V_ds(fet)/Ψ_0(fet)))^(1/3) --> 2.234/(1-(4.8/4.976))^(1/3)

Evaluating ... ...

C_gs(fet) = 6.80569376657684

STEP 3: Convert Result to Output's Unit

6.80569376657684 Farad --> No Conversion Required

FINAL ANSWER

6.80569376657684 ≈ 6.805694 Farad <-- Gate Source Capacitance FET

(Calculation completed in 00.004 seconds)

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< 8 FET Calculators

Ohmic Region Drain Current of FET

Go Drain Current FET = Channel Conductance FET*(Drain Source Voltage FET+3/2*((Surface Potential FET+Drain Source Voltage FET-Drain Source Voltage FET)^(3/2)-(Surface Potential FET+Drain Source Voltage FET)^(3/2))/((Surface Potential FET+Pinch OFF Voltage)^(1/2)))

Transconductance of FET

Go Forward Transconductance FET = (2*Zero Bias Drain Current)/Pinch OFF Voltage*(1-Drain Source Voltage FET/Pinch OFF Voltage)

Drain Source Voltage of FET

Go Drain Source Voltage FET = Supply Voltage at Drain FET-Drain Current FET*(Drain Resistance FET+Source Resistance FET)

Gate Source Capacitance of FET

Go Gate Source Capacitance FET = Gate Source Capacitance Off Time FET/(1-(Drain Source Voltage FET/Surface Potential FET))^(1/3)

Gate Drain Capacitance of FET

Go Gate Drain Capacitance FET = Gate Drain Capacitance Off Time FET/(1-Gate to Drain Voltage FET/Surface Potential FET)^(1/3)

Drain Current of FET

Go Drain Current FET = Zero Bias Drain Current*(1-Drain Source Voltage FET/Cutt-off Voltage FET)^2

Pinch off Voltage of FET

Go Pinch OFF Voltage = Pinch OFF Drain Source Voltage FET-Drain Source Voltage FET

Voltage Gain of FET

Go Voltage Gain FET = -Forward Transconductance FET*Drain Resistance FET

Gate Source Capacitance of FET Formula

Gate Source Capacitance FET = Gate Source Capacitance Off Time FET/(1-(Drain Source Voltage FET/Surface Potential FET))^(1/3)
C_gs(fet) = T_gs-off(fet)/(1-(V_ds(fet)/Ψ_0(fet)))^(1/3)

What Gate Source Capacitance of FET ?

The gate-source capacitance (C_gs) of a field-effect transistor (FET) is a crucial parameter that describes the capacitance between the gate terminal and the source terminal of the FET. It's an intrinsic capacitance associated with the FET structure and has a significant impact on the FET's high-frequency and switching performance.

How to Calculate Gate Source Capacitance of FET?

Gate Source Capacitance of FET calculator uses Gate Source Capacitance FET = Gate Source Capacitance Off Time FET/(1-(Drain Source Voltage FET/Surface Potential FET))^(1/3) to calculate the Gate Source Capacitance FET, Gate Source Capacitance of FET is the capacitance between the gate and source terminals of the FET. It is caused by the thin layer of oxide that insulates the gate from the channel. C_gs is a parasitic capacitance that can affect the performance of FET circuits. When a FET is switched from the off state to the on state, the gate capacitance needs to be charged. The faster the gate capacitance is charged, the faster the FET will switch on. The value of Cgs will affect the charging time of the gate capacitance, and therefore the switching speed of the FET. Gate Source Capacitance FET is denoted by C_gs(fet) symbol.

How to calculate Gate Source Capacitance of FET using this online calculator? To use this online calculator for Gate Source Capacitance of FET, enter Gate Source Capacitance Off Time FET (T_gs-off(fet)), Drain Source Voltage FET (V_ds(fet)) & Surface Potential FET (Ψ_0(fet)) and hit the calculate button. Here is how the Gate Source Capacitance of FET calculation can be explained with given input values -> 6.805694 = 2.234/(1-(4.8/4.976))^(1/3).

FAQ

What is Gate Source Capacitance of FET?

Gate Source Capacitance of FET is the capacitance between the gate and source terminals of the FET. It is caused by the thin layer of oxide that insulates the gate from the channel. C_gs is a parasitic capacitance that can affect the performance of FET circuits. When a FET is switched from the off state to the on state, the gate capacitance needs to be charged. The faster the gate capacitance is charged, the faster the FET will switch on. The value of Cgs will affect the charging time of the gate capacitance, and therefore the switching speed of the FET and is represented as C_gs(fet) = T_gs-off(fet)/(1-(V_ds(fet)/Ψ_0(fet)))^(1/3) or Gate Source Capacitance FET = Gate Source Capacitance Off Time FET/(1-(Drain Source Voltage FET/Surface Potential FET))^(1/3). Gate Source Capacitance Off Time FET refers to the time required for the gate-to-source capacitance to discharge, a critical parameter for controlling switching speed and power efficiency, Drain Source Voltage FET is the voltage between the drain and the source terminal of an FET & Surface Potential FET operates based on the surface potential of the semiconductor channel, controlling the flow of current through a gate voltage without generating inversion layers.

How to calculate Gate Source Capacitance of FET?

Gate Source Capacitance of FET is the capacitance between the gate and source terminals of the FET. It is caused by the thin layer of oxide that insulates the gate from the channel. C_gs is a parasitic capacitance that can affect the performance of FET circuits. When a FET is switched from the off state to the on state, the gate capacitance needs to be charged. The faster the gate capacitance is charged, the faster the FET will switch on. The value of Cgs will affect the charging time of the gate capacitance, and therefore the switching speed of the FET is calculated using Gate Source Capacitance FET = Gate Source Capacitance Off Time FET/(1-(Drain Source Voltage FET/Surface Potential FET))^(1/3). To calculate Gate Source Capacitance of FET, you need Gate Source Capacitance Off Time FET (T_gs-off(fet)), Drain Source Voltage FET (V_ds(fet)) & Surface Potential FET (Ψ_0(fet)). With our tool, you need to enter the respective value for Gate Source Capacitance Off Time FET, Drain Source Voltage FET & Surface Potential FET and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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