Gate Source Capacitance of FET Calculator

✖Gate Source Capacitance off Time of an FET has an impact on the turn-off time of the FET. The turn-off time is to switch from the on state to the off state.ⓘ Gate Source Capacitance off Time [C_off(g-s)]			+10% -10%
✖Gain to Source Voltage of a JFET is the ratio of the change in drain voltage to the change in source voltage.ⓘ Gain to Source Voltage [V_(g-s)]			+10% -10%
✖Psi (ψ) is the surface potential of an FET. It is the potential difference between the semiconductor surface and the bulk semiconductor.ⓘ Psi [Ψ₀]			+10% -10%

✖Gate to Source Capacitance (C_gs) is the capacitance between the gate and source terminals of an FET.ⓘ Gate Source Capacitance of FET [C_(g-s)]

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Formula

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Gate Source Capacitance of FET

Formula

`"C"_{"(g-s)"} = "C"_{"off(g-s)"}/(1-("V"_{"(g-s)"}/"Ψ"_{"0"}))^(1/3)`

Example

`"45.13716F"="45.134F"/(1-("0.0039V"/"0.01859kPa"))^(1/3)`

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Gate Source Capacitance of FET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate to Source Capacitance = Gate Source Capacitance off Time/(1-(Gain to Source Voltage/Psi))^(1/3)
C_(g-s) = C_off(g-s)/(1-(V_(g-s)/Ψ₀))^(1/3)
This formula uses 4 Variables

Variables Used

Gate to Source Capacitance - (Measured in Farad) - Gate to Source Capacitance (C_gs) is the capacitance between the gate and source terminals of an FET.
Gate Source Capacitance off Time - (Measured in Farad) - Gate Source Capacitance off Time of an FET has an impact on the turn-off time of the FET. The turn-off time is to switch from the on state to the off state.
Gain to Source Voltage - (Measured in Volt) - Gain to Source Voltage of a JFET is the ratio of the change in drain voltage to the change in source voltage.
Psi - (Measured in Pascal) - Psi (ψ) is the surface potential of an FET. It is the potential difference between the semiconductor surface and the bulk semiconductor.

STEP 1: Convert Input(s) to Base Unit

Gate Source Capacitance off Time: 45.134 Farad --> 45.134 Farad No Conversion Required
Gain to Source Voltage: 0.0039 Volt --> 0.0039 Volt No Conversion Required
Psi: 0.01859 Kilopascal --> 18.59 Pascal (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_(g-s) = C_off(g-s)/(1-(V_(g-s)/Ψ₀))^(1/3) --> 45.134/(1-(0.0039/18.59))^(1/3)

Evaluating ... ...

C_(g-s) = 45.1371566652782

STEP 3: Convert Result to Output's Unit

45.1371566652782 Farad --> No Conversion Required

FINAL ANSWER

45.1371566652782 ≈ 45.13716 Farad <-- Gate to Source Capacitance

(Calculation completed in 00.004 seconds)

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< 9 FET Calculators

Ohmic Region Drain Current of FET

Go Drain Current = Channel Conductance*(Drain to Source Voltage+3/2*((Psi+Gain to Source Voltage-Drain to Source Voltage)^(3/2)-(Psi+Gain to Source Voltage)^(3/2))/((Psi+Pinch OFF Voltage)^(1/2)))

Transconductance of FET

Go Forward Transconductance = (2*Drain Current of Zero Bias)/Pinch OFF Voltage*(1-Gain to Source Voltage/Pinch OFF Voltage)

Drain Source Voltage of FET

Go Drain to Source Voltage = Supply Voltage at Drain-Drain Current*(Drain Resistance+Source Resistance)

Gate Substrate Capacitance of FET

Go Gate Substrate Capacitance = Gate Substrate Capacitance off Time/(1-(Gate Substrate Voltage/Psi))^(1/2)

Drain Current of FET

Go Drain Current = Drain Current of Zero Bias*(1-Gain to Source Voltage/Cuttoff Gain to Source Voltage)^2

Gate Source Capacitance of FET

Go Gate to Source Capacitance = Gate Source Capacitance off Time/(1-(Gain to Source Voltage/Psi))^(1/3)

Gate Drain Capacitance of FET

Go Gate to Drain Capacitance = Gate Drain Capacitance off Time/(1-Gate to Drain Voltage/Psi)^(1/3)

Pinch off Voltage of FET

Go Pinch OFF Voltage = Pinch OFF Drain to Source Voltage-Gain to Source Voltage

Voltage Gain of FET

Go Voltage Gain = -Forward Transconductance*Drain Resistance

Gate Source Capacitance of FET Formula

Gate to Source Capacitance = Gate Source Capacitance off Time/(1-(Gain to Source Voltage/Psi))^(1/3)
C_(g-s) = C_off(g-s)/(1-(V_(g-s)/Ψ₀))^(1/3)

What Gate Source Capacitance of FET ?

The gate-source capacitance (C_gs) of a field-effect transistor (FET) is a crucial parameter that describes the capacitance between the gate terminal and the source terminal of the FET. It's an intrinsic capacitance associated with the FET structure and has a significant impact on the FET's high-frequency and switching performance.

How to Calculate Gate Source Capacitance of FET?

Gate Source Capacitance of FET calculator uses Gate to Source Capacitance = Gate Source Capacitance off Time/(1-(Gain to Source Voltage/Psi))^(1/3) to calculate the Gate to Source Capacitance, Gate Source Capacitance of FETT is the capacitance between the gate and source terminals of the FET. It is caused by the thin layer of oxide that insulates the gate from the channel. C_gs is a parasitic capacitance that can affect the performance of FET circuits. When a FET is switched from the off state to the on state, the gate capacitance needs to be charged. The faster the gate capacitance is charged, the faster the FET will switch on. The value of Cgs will affect the charging time of the gate capacitance, and therefore the switching speed of the FET. Gate to Source Capacitance is denoted by C_(g-s) symbol.

How to calculate Gate Source Capacitance of FET using this online calculator? To use this online calculator for Gate Source Capacitance of FET, enter Gate Source Capacitance off Time (C_off(g-s)), Gain to Source Voltage (V_(g-s)) & Psi (Ψ₀) and hit the calculate button. Here is how the Gate Source Capacitance of FET calculation can be explained with given input values -> 45.13605 = 45.134/(1-(0.0039/18.59))^(1/3).

FAQ

What is Gate Source Capacitance of FET?

Gate Source Capacitance of FETT is the capacitance between the gate and source terminals of the FET. It is caused by the thin layer of oxide that insulates the gate from the channel. C_gs is a parasitic capacitance that can affect the performance of FET circuits. When a FET is switched from the off state to the on state, the gate capacitance needs to be charged. The faster the gate capacitance is charged, the faster the FET will switch on. The value of Cgs will affect the charging time of the gate capacitance, and therefore the switching speed of the FET and is represented as C_(g-s) = C_off(g-s)/(1-(V_(g-s)/Ψ₀))^(1/3) or Gate to Source Capacitance = Gate Source Capacitance off Time/(1-(Gain to Source Voltage/Psi))^(1/3). Gate Source Capacitance off Time of an FET has an impact on the turn-off time of the FET. The turn-off time is to switch from the on state to the off state, Gain to Source Voltage of a JFET is the ratio of the change in drain voltage to the change in source voltage & Psi (ψ) is the surface potential of an FET. It is the potential difference between the semiconductor surface and the bulk semiconductor.

How to calculate Gate Source Capacitance of FET?

Gate Source Capacitance of FETT is the capacitance between the gate and source terminals of the FET. It is caused by the thin layer of oxide that insulates the gate from the channel. C_gs is a parasitic capacitance that can affect the performance of FET circuits. When a FET is switched from the off state to the on state, the gate capacitance needs to be charged. The faster the gate capacitance is charged, the faster the FET will switch on. The value of Cgs will affect the charging time of the gate capacitance, and therefore the switching speed of the FET is calculated using Gate to Source Capacitance = Gate Source Capacitance off Time/(1-(Gain to Source Voltage/Psi))^(1/3). To calculate Gate Source Capacitance of FET, you need Gate Source Capacitance off Time (C_off(g-s)), Gain to Source Voltage (V_(g-s)) & Psi (Ψ₀). With our tool, you need to enter the respective value for Gate Source Capacitance off Time, Gain to Source Voltage & Psi and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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