PN Junction Depletion Depth with Drain VLSI Calculator

↳

Electronics

Chemical Engineering

Civil

Electrical

Electronics and Instrumentation

Materials Science

Mechanical

Production Engineering

⤿

VLSI Material Optimization

Analog VLSI Design

✖Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.ⓘ Acceptor Concentration [N_A]			+10% -10%
✖Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied.ⓘ Junction Built-in Voltage [Ø₀]			+10% -10%
✖Drain to source Potential is potential between drain and source.ⓘ Drain to Source Potential [V_ds]			+10% -10%

✖P-n Junction Depletion Depth with Drain is defined as the extension of the depletion region into the semiconductor material near the drain terminal.ⓘ PN Junction Depletion Depth with Drain VLSI [x_dD]

⎘ Copy

👎

Formula

✖

PN Junction Depletion Depth with Drain VLSI

Formula

`"x"_{"dD"} = sqrt(((2*"[Permitivity-silicon]"*"[Permitivity-vacuum]")/("[Charge-e]"*"N"_{"A"}))*("Ø"_{"0"}+"V"_{"ds"}))`

Example

`"0.534467μm"=sqrt(((2*"[Permitivity-silicon]"*"[Permitivity-vacuum]")/("[Charge-e]"*"1e+16/cm³"))*("0.76V"+"1.45V"))`

Calculator

LaTeX

Reset

👍

Download Electronics Formula PDF PDF Image

PN Junction Depletion Depth with Drain VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

P-n Junction Depletion Depth with Drain = sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*Acceptor Concentration))*(Junction Built-in Voltage+Drain to Source Potential))
x_dD = sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*N_A))*(Ø₀+V_ds))
This formula uses 3 Constants, 1 Functions, 4 Variables

Constants Used

[Permitivity-silicon] - Permittivity of silicon Value Taken As 11.7
[Permitivity-vacuum] - Permittivity of vacuum Value Taken As 8.85E-12
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

P-n Junction Depletion Depth with Drain - (Measured in Meter) - P-n Junction Depletion Depth with Drain is defined as the extension of the depletion region into the semiconductor material near the drain terminal.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.
Junction Built-in Voltage - (Measured in Volt) - Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied.
Drain to Source Potential - (Measured in Volt) - Drain to source Potential is potential between drain and source.

STEP 1: Convert Input(s) to Base Unit

Acceptor Concentration: 1E+16 1 per Cubic Centimeter --> 1E+22 1 per Cubic Meter (Check conversion here)
Junction Built-in Voltage: 0.76 Volt --> 0.76 Volt No Conversion Required
Drain to Source Potential: 1.45 Volt --> 1.45 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

x_dD = sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*N_A))*(Ø₀+V_ds)) --> sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*1E+22))*(0.76+1.45))

Evaluating ... ...

x_dD = 5.34466520692296E-07

STEP 3: Convert Result to Output's Unit

5.34466520692296E-07 Meter -->0.534466520692296 Micrometer (Check conversion here)

FINAL ANSWER

0.534466520692296 ≈ 0.534467 Micrometer <-- P-n Junction Depletion Depth with Drain

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » VLSI Fabrication » VLSI Material Optimization » PN Junction Depletion Depth with Drain VLSI

Credits

Created by Priyanka Patel

Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad

Priyanka Patel has created this Calculator and 25+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

Santhosh Yadav has verified this Calculator and 50+ more calculators!

< 25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI

Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

Surface Potential

Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

Subthreshold Slope

Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

Gate Capacitance

Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

Channel Charge

Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

PN Junction Depletion Depth with Drain VLSI Formula

How does the widening of the PN Junction Depletion Depth impact MOSFET performance in VLSI?

As the depletion region widens, it introduces additional resistance to the flow of charge carriers in the channel between the source and drain. This increased resistance affects the overall performance of the MOSFET, influencing parameters such as drain current, transconductance, and threshold voltage. Understanding and controlling the PN Junction Depletion Depth is crucial for optimizing MOSFET behavior in VLSI designs.

How to Calculate PN Junction Depletion Depth with Drain VLSI?

PN Junction Depletion Depth with Drain VLSI calculator uses P-n Junction Depletion Depth with Drain = sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*Acceptor Concentration))*(Junction Built-in Voltage+Drain to Source Potential)) to calculate the P-n Junction Depletion Depth with Drain, The PN Junction Depletion Depth with Drain VLSI formula is defined as the extension of the depletion region into the semiconductor material near the drain terminal. P-n Junction Depletion Depth with Drain is denoted by x_dD symbol.

How to calculate PN Junction Depletion Depth with Drain VLSI using this online calculator? To use this online calculator for PN Junction Depletion Depth with Drain VLSI, enter Acceptor Concentration (N_A), Junction Built-in Voltage (Ø₀) & Drain to Source Potential (V_ds) and hit the calculate button. Here is how the PN Junction Depletion Depth with Drain VLSI calculation can be explained with given input values -> 534466.5 = sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*1E+22))*(0.76+1.45)).

FAQ

What is PN Junction Depletion Depth with Drain VLSI?

The PN Junction Depletion Depth with Drain VLSI formula is defined as the extension of the depletion region into the semiconductor material near the drain terminal and is represented as x_dD = sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*N_A))*(Ø₀+V_ds)) or P-n Junction Depletion Depth with Drain = sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*Acceptor Concentration))*(Junction Built-in Voltage+Drain to Source Potential)). Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material, Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied & Drain to source Potential is potential between drain and source.

How to calculate PN Junction Depletion Depth with Drain VLSI?

The PN Junction Depletion Depth with Drain VLSI formula is defined as the extension of the depletion region into the semiconductor material near the drain terminal is calculated using P-n Junction Depletion Depth with Drain = sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*Acceptor Concentration))*(Junction Built-in Voltage+Drain to Source Potential)). To calculate PN Junction Depletion Depth with Drain VLSI, you need Acceptor Concentration (N_A), Junction Built-in Voltage (Ø₀) & Drain to Source Potential (V_ds). With our tool, you need to enter the respective value for Acceptor Concentration, Junction Built-in Voltage & Drain to Source Potential and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search