Saturation Drift Velocity Calculator

✖Emitter to collector distance is total distance between emitter to collector junction.ⓘ Emitter to Collector Distance [L_min]			+10% -10%
✖Average time to traverse emitter to collector is defined as the time taken by the electron to travel from emitter junction to collector.ⓘ Average Time to Traverse Emitter to Collector [Γ_avg]			+10% -10%

✖Saturated Drift Velocity in BJT is the maximum velocity a charge carrier in a semiconductor.ⓘ Saturation Drift Velocity [V_sc]

⎘ Copy

👎

Formula

✖

Saturation Drift Velocity

Formula

`"V"_{"sc"} = "L"_{"min"}/"Γ"_{"avg"}`

Example

`"5m/s"="2.125μm"/"0.425μs"`

Calculator

LaTeX

Reset

👍

Download BJT Microwave Devices Formulas PDF PDF Image

Saturation Drift Velocity Solution

STEP 0: Pre-Calculation Summary

Formula Used

Saturated Drift Velocity in BJT = Emitter to Collector Distance/Average Time to Traverse Emitter to Collector
V_sc = L_min/Γ_avg
This formula uses 3 Variables

Variables Used

Saturated Drift Velocity in BJT - (Measured in Meter per Second) - Saturated Drift Velocity in BJT is the maximum velocity a charge carrier in a semiconductor.
Emitter to Collector Distance - (Measured in Meter) - Emitter to collector distance is total distance between emitter to collector junction.
Average Time to Traverse Emitter to Collector - (Measured in Second) - Average time to traverse emitter to collector is defined as the time taken by the electron to travel from emitter junction to collector.

STEP 1: Convert Input(s) to Base Unit

Emitter to Collector Distance: 2.125 Micrometer --> 2.125E-06 Meter (Check conversion here)
Average Time to Traverse Emitter to Collector: 0.425 Microsecond --> 4.25E-07 Second (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_sc = L_min/Γ_avg --> 2.125E-06/4.25E-07

Evaluating ... ...

V_sc = 5

STEP 3: Convert Result to Output's Unit

5 Meter per Second --> No Conversion Required

FINAL ANSWER

5 Meter per Second <-- Saturated Drift Velocity in BJT

(Calculation completed in 00.020 seconds)

You are here -

Home » Engineering » Electronics » Microwave Theory » Microwave Semiconductor Devices » BJT Microwave Devices » Saturation Drift Velocity

Credits

Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 1900+ more calculators!

< 15 BJT Microwave Devices Calculators

Maximum Frequency of Oscillations

Go Maximum Frequency of Oscillations = sqrt(Common Emitter Short Circuit Gain Frequency/(8*pi*Base Resistance*Collector Base Capacitance))

Emitter Base Charging Time

Go Emitter Charging Time = Emitter Collector Delay Time-(Base Collector Delay Time+Collector Charging Time+Base Transit Time)

Base Collector Delay Time

Go Base Collector Delay Time = Emitter Collector Delay Time-(Collector Charging Time+Base Transit Time+Emitter Charging Time)

Collector Charging Time

Go Collector Charging Time = Emitter Collector Delay Time-(Base Collector Delay Time+Base Transit Time+Emitter Charging Time)

Base Transit Time

Go Base Transit Time = Emitter Collector Delay Time-(Base Collector Delay Time+Collector Charging Time+Emitter Charging Time)

Emitter to Collector Delay Time

Go Emitter Collector Delay Time = Base Collector Delay Time+Collector Charging Time+Base Transit Time+Emitter Charging Time

Collector Base Capacitance

Go Collector Base Capacitance = Cut-off Frequency in BJT/(8*pi*Maximum Frequency of Oscillations^2*Base Resistance)

Base Resistance

Go Base Resistance = Cut-off Frequency in BJT/(8*pi*Maximum Frequency of Oscillations^2*Collector Base Capacitance)

Avalanche Multiplication Factor

Go Avalanche Multiplication Factor = 1/(1-(Applied Voltage/Avalanche Breakdown Voltage)^Doping Numerical Factor)

Saturation Drift Velocity

Go Saturated Drift Velocity in BJT = Emitter to Collector Distance/Average Time to Traverse Emitter to Collector

Emitter to Collector Distance

Go Emitter to Collector Distance = Maximum Applied Voltage in BJT/Maximum Electric Field in BJT

Total Charging Time

Go Total Charging Time = Emitter Charging Time+Collector Charging Time

Cut-off Frequency of Microwave

Go Cut-off Frequency in BJT = 1/(2*pi*Emitter Collector Delay Time)

Total Transit Time

Go Total Transit Time = Base Transit Time+Collector Depletion Region

Hole Current of Emitter

Go Hole Current of Emitter = Base Current+Collector Current

Saturation Drift Velocity Formula

Saturated Drift Velocity in BJT = Emitter to Collector Distance/Average Time to Traverse Emitter to Collector
V_sc = L_min/Γ_avg

What is Power Frequency Voltage?

The ratio of breakdown voltage for any insulation or gap due to an impulse voltage of specified t1/t2 or shape to power frequency breakdown voltage is defined as impulse ratio.

How to Calculate Saturation Drift Velocity?

Saturation Drift Velocity calculator uses Saturated Drift Velocity in BJT = Emitter to Collector Distance/Average Time to Traverse Emitter to Collector to calculate the Saturated Drift Velocity in BJT, The Saturation Drift Velocity formula is defined as the maximum velocity a charge carrier in a semiconductor, generally, an electron attains in the presence of very high electric fields. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. Saturated Drift Velocity in BJT is denoted by V_sc symbol.

How to calculate Saturation Drift Velocity using this online calculator? To use this online calculator for Saturation Drift Velocity, enter Emitter to Collector Distance (L_min) & Average Time to Traverse Emitter to Collector (Γ_avg) and hit the calculate button. Here is how the Saturation Drift Velocity calculation can be explained with given input values -> 5E+6 = 2.125E-06/4.25E-07.

FAQ

What is Saturation Drift Velocity?

The Saturation Drift Velocity formula is defined as the maximum velocity a charge carrier in a semiconductor, generally, an electron attains in the presence of very high electric fields. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally and is represented as V_sc = L_min/Γ_avg or Saturated Drift Velocity in BJT = Emitter to Collector Distance/Average Time to Traverse Emitter to Collector. Emitter to collector distance is total distance between emitter to collector junction & Average time to traverse emitter to collector is defined as the time taken by the electron to travel from emitter junction to collector.

How to calculate Saturation Drift Velocity?

The Saturation Drift Velocity formula is defined as the maximum velocity a charge carrier in a semiconductor, generally, an electron attains in the presence of very high electric fields. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally is calculated using Saturated Drift Velocity in BJT = Emitter to Collector Distance/Average Time to Traverse Emitter to Collector. To calculate Saturation Drift Velocity, you need Emitter to Collector Distance (L_min) & Average Time to Traverse Emitter to Collector (Γ_avg). With our tool, you need to enter the respective value for Emitter to Collector Distance & Average Time to Traverse Emitter to Collector and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search